NPN-Silizium-Fototransistor Zeilen Silicon NPN Phototransistor Arrays Lead (Pb) Free Product - RoHS Compliant BPX 80 BPX 82 … 89 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • Mehrstellige Zeilenbauform aus klarem Epoxy • Gruppiert lieferbar • Especially suitable for applications from 450 nm to 1100 nm • High linearity • Multiple-digit array package of transparent epoxy • Available in groups Anwendungen Applications • Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb • Industrieelektronik • „Messen/Steuern/Regeln“ • Miniature photointerrupters • Industrial electronics • For control and drive circuits Typ Type Bestellnummer Ordering Code Fotostrom , Ee= 0.5 mW/cm2, λ = 950 nm, VCE = 5 V Photocurrent IPCE (mA) BPX 82 Q62702P0021 > 0.32 BPX 83 Q62702P0025 > 0.32 BPX 84 Q62702P0030 > 0.32 BPX 85 Q62702P0031 > 0.32 BPX 86 Q62702P0022 > 0.32 BPX 87 Q62702P0032 > 0.32 BPX 88 Q62702P0033 > 0.32 BPX 89 Q62702P0026 > 0.32 BPX 80 Q62702P0028 > 0.32 2007-04-04 1 BPX 80, BPX 82 … 89 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 … + 80 °C Kollektor-Emitterspannung Collector-emitter voltage VCE 35 V Kollektorstrom Collector current IC 50 mA Kollektorspitzenstrom, τ < 10 μs Collector surge current ICS 200 mA Verlustleistung, TA = 25 °C Total power dissipation Ptot 90 mW Wärmewiderstand Thermal resistance RthJA 750 K/W 2007-04-04 2 BPX 80, BPX 82 … 89 Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 850 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax λ 450 … 1100 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 0.11 mm2 Abmessung der Chipfläche Dimensions of chip area L×B L×W 0.5 × 0.5 mm × mm Halbwinkel Half angle ϕ ± 18 Grad deg. Kapazität Capacitance VCE = 0 V, f = 1 MHz, E = 0 CCE 7.5 pF Dunkelstrom Dark current VCE = 20 V, E = 0 ICEO 1 (≤ 50) nA 2007-04-04 3 BPX 80, BPX 82 … 89 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit Buchstaben gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by alphabetic characters. Bezeichnung Parameter Symbol Symbol Werte Value Einheit Unit -A -B -C 0.32…0.63 1.5 0.40…0.80 1.9 ≥ 0.50 2.3 mA mA Fotostrom Photocurrent Ee= 0.5 mW/cm2, λ = 950 nm, VCE = 5 V IPCE Ev = 1000 Ix, Normlicht/standard light A, IPCE VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ tr , tf 5.5 6 8 μs Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) × 0.3, VCEsat 150 150 150 mV Ee= 0.5 mW/cm2, λ = 950 nm 1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. 1) IPCEmin is the min. photocurrent of the specified group. Die gelieferten Bauelemente sind mit -A, -B, -C gekennzeichnet. Wegen Ausbeuteschwankungen ist jedoch die Bestellung einer definierten Gruppe -A, -B, -C nicht möglich. For delivery the components are marked -A, -B, -C. Due to differing yields, it is not possible to order a definite group. 2007-04-04 4 BPX 80, BPX 82 … 89 Relative Spectral Sensitivity Srel = f (λ) Photocurrent IPCE = f (Ee), VCE = 5 V Total Power Dissipation Ptot = f (TA) 100 % 90 Srel 80 70 60 50 40 30 20 10 0 400 500 600 700 800 nm 1100 900 1000 lambda Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz, E = 0 8 Dark Current ICEO = f (VCE), E = 0 pF 10 7 CCE nA 6 I CEO 5 1 4 3 0.1 2 1 0 1E-03 0.01 1E-02 1E-01 1E+00 1E+01 VCE Directional Characteristics Srel = f (ϕ) 1E+02 0 V 5 10 15 20 25 30 V 35 V CE Dark Current ICEO = f (TA), VCE = 20 V, E = 0 10000 nA 1000 I CEO 100 10 1 0.1 0.01 -25 0 25 50 75 TA 2007-04-04 5 °C 100 BPX 80, BPX 82 … 89 0.5 (0.020) 0.4 (0.016) 2.54 (0.100) spacing 0.7 (0.028) 0 ... 5˚ 0.6 (0.024) 0.25 (0.010) 0.15 (0.006) 2.1 (0.083) 1.5 (0.059) 3.0 (0.118) 7.0 (0.276) 3.5 (0.138) 7.4 (0.291) 2.7 (0.106) 2.5 (0.098) 1.9 (0.075) 1.7 (0.067) Chip position 3.6 (0.142) 3.2 (0.126) Maßzeichnung Package Outlines A 0.4 A 1.4 (0.055) 1.0 (0.039) Collector (BPX 83) Cathode (LD 263) GEOY6367 Maße in mm (inch) / Dimensions in mm (inch). . Transistoren pro Zeile Number of Transistors per Array Maße „A“ Dimensions “A” 2 4.5 ... 4.9 3 7.0 ... 7.4 4 9.6 ... 10.0 5 12.1 ... 12.5 6 14.6 ... 16.0 7 17.2 ... 17.6 8 19.7 ... 20.1 9 22.3 ... 22.7 10 24.8 ... 25.2 2007-04-04 6 BPX 80, BPX 82 … 89 Lötbedingungen Soldering Conditions Wellenlöten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskühlung forced cooling 0 0 50 100 150 200 s 250 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-04 7