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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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FCPF250N65S3L1 N-Channel SuperFET® III MOSFET 650 V, 12 A, 250 mΩ Features Description • 700 V @ TJ = 150 oC SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency. • Typ. RDS(on) = 210 mΩ • Ultra Low Gate Charge (Typ. Qg = 24 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Computing / Display Power Supplies • Telecom / Server Power Supplies • Industrial Power Supplies D G D S G TO-220F S Absolute Maximum Ratings TC = Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage 25oC unless otherwise noted. Parameter - DC - AC (f > 1 Hz) - Continuous (TC = 25oC) FCPF250N65S3L1 650 Unit V ±30 V ±30 V 12* ID Drain Current IDM Drain Current (Note 1) 30* A EAS Single Pulsed Avalanche Energy (Note 2) 57 mJ IAS Avalanche Current (Note 1) 2.3 A EAR Repetitive Avalanche Energy (Note 1) 0.31 mJ dv/dt - Continuous (TC = 100oC) - Pulsed MOSFET dv/dt 100 Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL A 7.6* - Derate Above 25oC 20 V/ns 31 W 0.25 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCPF250N65S3L1 RθJC Thermal Resistance, Junction to Case, Max. 4.07 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 Semiconductor Components Industries, LLC, 2017 May, 2017, Rev. 1.0 Unit o C/W Publication Order Number: FCPF250N65S3L1/D 1 FCPF250N65S3L1 — N-Channel SuperFET® III MOSFET www.onsemi.com Part Number FCPF250N65S3L1 Top Mark FCPF250N65S3 Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 1 mA, TJ = 25°C 650 - - V VGS = 0 V, ID = 1 mA, TJ = 150°C 700 - - V - 0.67 - V/oC Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 1 mA, Referenced to 25oC VDS = 650 V, VGS = 0 V - - 1 VDS = 520 V, TC = 125oC - 0.77 - VGS = ±30 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 1.2 mA 2.5 - 4.5 V Static Drain to Source On Resistance VGS = 10 V, ID = 6 A - 210 250 mΩ gFS Forward Transconductance VDS = 20 V, ID = 6 A - 7.4 - S VDS = 400 V, VGS = 0 V, f = 1 MHz - 1010 - pF - 25 - pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 248 - Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 33 - pF Qg(tot) Total Gate Charge at 10V 24 - nC Qgs Gate to Source Gate Charge VDS = 400 V, ID = 6 A, VGS = 10 V - 6.1 - nC Qgd Gate to Drain “Miller” Charge - 9.7 - nC ESR Equivalent Series Resistance - 8.7 - Ω - 18 - ns - 18 - ns - 49 - ns - 12 - ns (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 400 V, ID = 6 A, VGS = 10 V, Rg = 4.7 Ω (Note 4) Source-Drain Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 12 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 30 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 6 A - - 1.2 V trr Reverse Recovery Time 251 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 6 A, dIF/dt = 100 A/μs - 3.4 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 2.3 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 6 A, di/dt ≤ 200 A/μs, VDD ≤ 400 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 2 FCPF250N65S3L1 — N-Channel SuperFET® III MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 40 ID, Drain Current[A] 10 ID, Drain Current[A] 30 VGS = 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 1 *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test 10 o 150 C o 25 C o -55 C o 2. TC = 25 C 0.1 0.2 1 10 VDS, Drain-Source Voltage[V] 1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 100 o *Note: TC = 25 C 0.6 0.4 VGS = 10V VGS = 20V 0.2 0.0 0 10 20 30 ID, Drain Current [A] o 150 C 1 0.01 10 VGS, Gate-Source Voltage [V] 4 Ciss 3 10 Coss *Note: 1. VGS = 0V 2. f = 1MHz 1 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0 10 Crss -1 0 1 2 10 10 10 VDS, Drain-Source Voltage [V] 1.5 3 10 www.onsemi.com 3 *Note: ID = 6A VDS = 130V 8 VDS = 400V 6 4 2 0 -1 10 0.5 1.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 10 Capacitances [pF] o -55 C 5 10 o 25 C 0.1 10 10 9 2. 250μs Pulse Test 0.001 0.0 Figure 5. Capacitance Characteristics 10 5 6 7 8 VGS, Gate-Source Voltage[V] *Notes: 1. VGS = 0V 10 40 2 4 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature IS, Reverse Drain Current [A] RDS(ON), Drain-Source On-Resistance [Ω] 0.8 3 0 6 12 18 24 Qg, Total Gate Charge [nC] 30 FCPF250N65S3L1 — N-Channel SuperFET® III MOSFET Typical Performance Characteristics FCPF250N65S3L1 — N-Channel SuperFET® III MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 *Notes: 1. VGS = 0V 2. ID = 10mA RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -50 2.5 *Notes: 1. VGS = 10V 2. ID = 6A 2.0 1.5 1.0 0.5 0.0 0 50 100 150 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature 15 100 10 100μs ID, Drain Current [A] ID, Drain Current [A] 10μs 1ms 10ms 1 Operation in This Area is Limited by R DS(on) DC *Notes: 0.1 10 5 o 1. TC = 25 C o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 Figure 11. Eoss vs. Drain to Source Voltage 6 EOSS [μJ] 4 2 0 0 130 260 390 520 VDS, Drain to Source Voltage [V] 650 www.onsemi.com 4 50 75 100 125 o TC, Case Temperature [ C] 150 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 12. Transient Thermal Response Curve 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: 0.01 0.001 -5 10 ZθJC(t) = r(t) x RθJC RθJC = 4.07 oC/W Peak TJ = PDM x ZθJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE -4 10 -3 10 -2 -1 10 10 t, RECTANGULAR PULSE DURATION (sec) www.onsemi.com 5 0 10 1 10 2 10 FCPF250N65S3L1 — N-Channel SuperFET® III MOSFET Typical Performance Characteristics (Continued) FCPF250N65S3L1 — N-Channel SuperFET® III MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG V 10V GS RL VDS 90% VDD VGS VGS DUT 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 7 FCPF250N65S3L1 — N-Channel SuperFET® III MOSFET DUT 10.30 9.80 A 2.90 2.50 3.40 3.00 6.60 6.20 3.00 2.60 B 1 X 45° 19.00 17.70 B 15.70 15.00 3.30 2.70 B 1 2.14 10.70 10.30 1.20 1.00 3 2.70 2.30 1.20 0.90 (2X) 0.90 (3X) 0.50 0.50 M 2.74 (2X) 2.34 B 0.60 0.40 A NOTES: 4.60 4.30 A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-2009. F. DRAWING FILE NAME: TO220V03REV1 G. FAIRCHILD SEMICONDUCTOR ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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