MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR1AM-12 LOW POWER USE GLASS PASSIVATION TYPE OUTLINE DRAWING BCR1AM-12 Dimensions in mm φ5.0 MAX 5.0 MAX 4.4 VOLTAGE CLASS TYPE NAME 2 3 12.5 MIN 1 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL CIRCUMSCRIBE CIRCLE φ0.7 • • • • 3.9 MAX 1.3 1.25 1.25 1 3 2 IT (RMS) ........................................................................ 1A VDRM ....................................................................... 600V IFGT !, IRGT !, IRGT # ............................................. 5mA IFGT # ..................................................................... 10mA JEDEC : TO-92 APPLICATION Contactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines, trigger circuit for low and medium triac, solid state relay, other general purpose control applications MAXIMUM RATINGS Symbol Voltage class Parameter Unit 12 VDRM Repetitive peak off-state voltage ✽1 600 V VDSM Non-repetitive peak off-state voltage ✽1 720 V Conditions Parameter Symbol IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=56°C ✽4 ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t I2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM Ratings Unit 1.0 A 10 A 0.41 A2s 1 W 0.1 W Peak gate voltage 6 V IGM Peak gate current 1 Tj Junction temperature Storage temperature Tstg — Weight Typical value A –40 ~ +125 °C –40 ~ +125 °C 0.23 g ✽1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR1AM-12 LOW POWER USE GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 1.0 mA VTM On-state voltage Tc=25°C, ITM=1.5A, Instantaneous measurement — — 1.6 V VFGT ! ! — — 2.0 V VRGT ! @ — — 2.0 V — — 2.0 V VRGT # Gate trigger voltage ✽2 # Tj=25°C, VD =6V, RL=6Ω, RG=330Ω VFGT # $ — — 2.0 IFGT ! ! — — 5 mA — — 5 mA — — 5 mA — — 10 mA 0.1 — — V — — 50 °C/ W ✽3 — — V/µs IRGT ! IRGT # @ Gate trigger current ✽2 # Tj=25°C, VD =6V, RL=6Ω, RG=330Ω $ IFGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM R th (j-c) Thermal resistance Junction to case ✽4 (dv/dt) c Critical-rate of rise of off-state commutating voltage V ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. ✽4. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. Voltage class VDRM (V) (dv/dt) c Min. Commutating voltage and current waveforms (inductive load) Test conditions Unit SUPPLY VOLTAGE 1. Junction temperature Tj =125°C 12 2 600 V/µs 2. Rate of decay of on-state commutating current (di/dt)c=–0.5A/ms TIME MAIN CURRENT (di/dt)c TIME MAIN VOLTAGE 3. Peak off-state voltage VD =400V TIME (dv/dt)c VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 7 5 3 2 10 TC = 25°C 101 7 5 3 2 100 7 5 3 2 10–1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 102 8 6 4 2 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR1AM-12 LOW POWER USE GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE PGM = 1W PG(AV) = 0.1W VGM = 6V 100 7 5 IFGT I 3 IRGT I 2 IRGT III 10–1 7 5 3 2 IGM = 1A IFGT III VGD = 0.1V 10–2 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 100 (%) 101 7 5 3 2 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE VOLTAGE (V) GATE CHARACTERISTICS 103 7 5 4 3 2 TYPICAL EXAMPLE IFGT I, IRGT I 102 7 5 4 3 2 IRGT III, IFGT III 101 –60 –40 –20 0 20 40 60 80 100 120 140 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS TYPICAL EXAMPLE VFGT I, VRGT I 102 7 5 4 3 2 VRGT III, VFGT III 101 –60 –40 –20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (°C/W) 103 7 5 4 3 2 102 7 5 3 2 JUNCTION TO CASE 101 7 5 3 2 100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 2.0 160 1.6 1.2 360° CONDUCTION RESISTIVE, INDUCTIVE LOADS 0.8 0.4 0 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 103 7 5 3 2 JUNCTION TO AMBIENT JUNCTION TEMPERATURE (°C) 0 0.4 0.8 1.2 1.6 RMS ON-STATE CURRENT (A) 2.0 CASE TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS 140 120 100 360° CONDUCTION 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR1AM-12 LOW POWER USE 100 60 40 20 100 (%) 0 HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) RESISTIVE, INDUCTIVE LOADS 80 103 7 5 4 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 HOLDING CURRENT VS. JUNCTION TEMPERATURE LACHING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION T2+, G– TYPICAL EXAMPLE T2+, G+ – – TYPICAL T2 , G T2– , G+ EXAMPLE 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE TYPICAL EXAMPLE 100 (%) JUNCTION TEMPERATURE (°C) 140 160 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 100 (%) 104 7 5 3 2 JUNCTION TEMPERATURE (°C) 101 –60 –40 –20 0 20 40 60 80 100 120 140 BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) 105 7 TYPICAL EXAMPLE 5 3 2 RMS ON-STATE CURRENT (A) 102 7 5 4 3 2 160 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 100 (%) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS 140 OF CONDUCTION ANGLE NATURAL CONVECTION 120 NO FINS LACHING CURRENT (mA) AMBIENT TEMPERATURE (°C) GLASS PASSIVATION TYPE TYPICAL EXAMPLE Tj = 125°C 120 I QUADRANT 100 80 60 III QUADRANT 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR1AM-12 LOW POWER USE GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 10–1 –1 10 2 3 4 5 7 100 2 3 4 5 7 101 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) 100 (%) 101 TC = 125°C 7 TYPICAL EXAMPLE IT = 1A 5 τ = 500µs 4 VD = 200V 3 2 III QUADRANT MINIMUM CHARAC100 TERISTICS 7 VALUE 5 4 I QUADRANT 3 2 GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) COMMUTATION CHARACTERISTICS 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 IFGT I IFGT III IRGT III IRGT I 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω A 6V A 6V RG V TEST PROCEDURE 1 6Ω RG V TEST PROCEDURE 2 6Ω A 6V V RG TEST PROCEDURE 3 A 6V V RG TEST PROCEDURE 4 Feb.1999