Diode Semiconductor Korea BY296(Z)---BY299S(Z) VOLTAGE RANGE: 100--- 1000 V CURRENT: 2.0 A FAST RECOVERY RECTIFIERS FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 DO - 27 MECHANICAL DATA Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Dimensions in millimeters Weight:0.041 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BY 296 BY 297 BY 298 BY 299 BY 299S UNITS Maximum recurrent peak reverse voltage VRRM 100 200 400 800 1000 V Maximum RMS voltage VRMS 70 140 280 560 700 V Maximum DC blocking voltage V DC 100 200 400 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) 2.0 A IFSM 70.0 A VF 1.3 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 2.0 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 IR 10.0 100.0 A Maximum reverse recovery time (Note1) trr 150 ns Typical junction capacitance (Note2) CJ 32 pF Typical thermal resistance (Note3) RθJA 22 TJ - 55---- +150 TSTG - 55---- +150 Operating junction temperature range Storage temperature range ／Ｗ NOTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea FIG.1 -- FORWARD CURRENT DERATING CURVE BY296(Z)---BY299S(Z) FIG.2 -- MAXIMUM NON-REPETITIVE SURGE CURRENT 1.5 Single Phase Half Wave 60HZ Resistive or Inductive Load 1.0 0.5 0 0 25 50 75 100 125 150 175 PEAK FORWARD SURGE CURRENT AMPERES 2.0 AMPERES AVERAGE FORWARD CURRENT 2.5 80 70 T J =125 8.3ms Single Half Sine-Wave 60 50 40 30 20 10 0 2 1 AMBIENT TEMPERATURE, JUNCTION CAPACITANCE,pF 40 20 10 TJ=25 f=1MHz 2 .4 1.0 2 4 10 REVERSE VOLTAGE,VOLTS 20 40 100 INSTANTANEOUS FORWARD CURRENT AMPERES 60 .2 20 40 60 80 100 FIG.4 -- TYPICAL FORWARD CHARACTERISTICS 100 1 .1 8 10 I,LEAD LENGTH(mm) FIG.3 -- TYPICAL JUNCTION CAPACITANCE 4 4 100 10 TJ=25 Pulse Width=300µS 4 2 1.0 0.4 0.2 0.1 0.06 0.04 0.02 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS www.diode.kr