CTC CSRB100 Schottky barrier rectifier Datasheet

CSRB120 thru CSRB1200
REVERSE VOLTAGE - 20 to 200 Volts
SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
FORWARD CURRENT - 1.0 Ampere
SOD-123
FEATURES
‧
‧
‧
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High Current Capability
Extremely Low Thermal Resistance
For Surface Mount Application
Higher Temp Soldering:250°C for 10
Seconds at Terminals
‧ Low Forward Voltage
‧ RoHS Compliant Product
‧ AEC-Q101 qualified
0.110(2.80)
0.102(2.60)
0.053(1.35)
0.031(0.80)
0.075(1.90)
0.067(1.70)
MECHANICAL DATA
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‧
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‧
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‧
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Case: SOD-123FL
Case Material:Molded Plastic. UL
Flammability Classification Rating 94V-0
Terminals:Lead Free Plating (Tin Finish)
Soldurable per MIL-STD-202,Method 208
Polarity:Cathode Band
Weight:0.015 grams (approximate)
0.045(1.15)
0.032(0.81)
0.012(0.30)
0.002(0.05)
0.154(3.90)
0.130(3.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
SYMBOL
CSRB CSRB CSRB CSRB CSRB CSRB CSRB CSRB
120
130
140
160
180
1100
1150
1200
UNIT
Maximum recurrent peak reverse voltage
VRRM
20
30
40
60
80
100
150
200
V
Maximum RMS voltage
VRMS
14
21
28
42
56
70
105
140
V
Maximum DC blocking voltage
VDC
20
30
40
60
80
100
150
200
V
maximum average forward rectified current
Peak forward surge current,8.3mssingle
half sine-wave superim posed on rated load
Maximum instantaneous@25°C
IF
1.0
A
IFSM
30.0
A
VF
Marking code
Maximum DC Reverse Current
at Rated DC Blocking Voltage@25°C
0.52
C2
C3
IR
0.66
C4
C6
0.83
C8
CA
0.5
0.87
0.90
CB
CC
0.2
V
mA
Typical Junction Capacitance(note1)
CJ
Typical Thermal Resistance(note2)
RθJa
100
°C/W
TJ
-50~150
°C
TSTG
-65~175
°C
Operating Temperature Range
Storage Temperature Range
100
70
50
30
pF
NOTES:
1. Measured at 1MHz and applied reverse of 4V DC.
2. Device mounted on FR-4 substrate,1”*1”,2oz,single-sided,PC boards with 0.1”*0.15 copper pad.
V0.0 2012-06
http://ctc-semicon.com
P1/2
CSRB120 thru CSRB1200
RATINGS AND CHARACTERISTIC CURVES
FIG. 1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG. 2-TYPICAL FORWARD CHARATERISTIC
100.00
2
INSTANTANEOUS FOR
RWARD CURRENT (A)
AVERAGE FORW
WARD CURRENT,(A)
ERS120P~ERS140P
1.5
1
0.5
0
0
25
50
75
100
125
150
ERS160P
ERS180P~ERS1100P
10.00
ERS1150P
ERS1200P
1.00
0.10
TJ=25℃ PULSE
WIDTH 300us 2%
DUTY CYCLE
0.01
0.2
0.4
AMBIENT TEMPERATURE(℃)
TJ=25℃ 8.3ms Single
Half Sine Wave
JEDEC method
20
15
10
5
1.0
100
0
1
0.8
FIG. 4-TYPICAL REVERSE CHARATERISTIC
REVERSE LEAKAGE CU
URRENT (mA)
PEAK FORWARD SURGE C
CURRENT (A)
FIG. 3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
30
25
0.6
FORWARD VOLTAGE (V)
10
100
NUMBER OF CYCLES AT 60Hz
10
1
0.1
25℃
0.01
100℃
0 001
0.001
20
40
60
80
100
PERCENTAGE RATED PEAK REVERSE VOLTAGE (%)
FIG. 5-TYPICAL JUNCTION CAPACITANCE
200
ERS120P~ERS140P
ERS150P
ERS160P
ERS150P~ERS160P
JUNCTION CAPACITANCE (pF)
160
ERS180P~ERS1100P
ERS1150P
120
ERS1200P
80
40
0
0
1
10
100
REVERSE VOLTAGE (V)
V0.0 2012-06
http://ctc-semicon.com
P2/2
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