Diodes SMD Type Schottky Diodes BAS40/-04/-05/-06 (KAS40/-04/-05/-06) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 1 0.55 ● Fast Switching +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● Low Forward Voltage 0.4 3 ■ Features 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 BAS40-06 0-0.1 BAS40 +0.1 0.38 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 BAS40-04 BAS40-05 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM Rating Unit 40 V mA DC Blocking Voltage VR Forward Continuous Current IFM 200 Pd 200 mW RθJA 500 ℃/W TJ 125 Tstg -55 to 150 Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Reverse breakdown voltage Forward voltage Test Conditions VR IR= 100 uA VF1 IF= 1mA Min Typ Max Unit 0.38 V 40 VF2 IF= 40 mA 1 Reverse voltage leakage current IR1 VR= 30 V 200 nA Junction capacitance Cj VR= 0 V, f= 1 MHz 5 pF Reverse recovery time trr IF=IR=10mA,Irr=1mA, RL=100Ω 5 ns ■ Marking NO Marking BAS40 43 . BAS40-06 BAS40-05 BAS40-04 46 45 44 www.kexin.com.cn 1 Diodes SMD Type Schottky Diodes BAS40/-04/-05/-06 (KAS40/-04/-05/-06) ■ Typical Characterisitics Forward Characteristics Reverse 100 Characteristics 100 Ta=100℃ (uA) Ta=100℃ REVERSE CURRENT IR FORWARD CURRENT IF (mA) 10 10 Ta=25℃ 1 1 0.1 Ta=25℃ 0.01 0.1 0.0 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 1E-3 1.0 10 20 30 REVERSE VOLTAGE Capacitance Characteristics 4.0 0 VF (V) VR 40 (V) Power Derating Curve 0.25 3.5 (W) 0.20 PD 3.0 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ f=1MHz 2.5 2.0 1.5 1.0 0 5 10 15 REVERSE VOLTAGE 2 www.kexin.com.cn 20 VR 25 (V) 30 0.15 0.10 0.05 0.00 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃) 125