ADPOW APTM10UM02FA Single switch mosfet power module Datasheet

APTM10UM02FA
VDSS = 100V
RDSon = 2.25mΩ typ @ Tj = 25°C
ID = 570A* @ Tc = 25°C
Single Switch
MOSFET Power Module
SK
S
D
DK
G
S
D
SK
Features
• Power MOS V® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Fast intrinsic diode
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
G
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
100
570 *
429
1900
±30
2.5
1660
100
50
3000
Unit
V
A
V
mΩ
W
A
mJ
* Specification of MOSFET device but output current must be limited to 500A to not exceed a delta of temperature
greater than 100°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTM10UM02FA– Rev 0 May, 2005
DK
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
APTM10UM02FA
All ratings @ Tj = 25°C unless otherwise specified
Symbol
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Test Conditions
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
VGS = 0V,VDS = 100V
VGS = 0V,VDS = 80V
Min
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 200A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VSD
dv/dt
Characteristic
Continuous Source current
(Body diode)
Diode Forward Voltage
Peak Diode Recovery Z
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2.25
2
Min
VGS = 10V
VBus = 50V
ID = 400A
Typ
40
15.7
5.9
1360
Unit
Max
Unit
µA
mΩ
V
nA
nF
nC
720
Inductive switching
VGS = 15V
VBus = 66V
ID = 400A
R G = 1.25Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 400A, R G =1.25Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 400A, R G = 1.25Ω
Test Conditions
160
240
500
ns
160
2.2
mJ
2.41
2.43
mJ
2.56
Min
Typ
Tj = 25°C
Max
570*
429
1.3
5
190
Tj = 125°C
370
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 400A
IS = - 400A
VR = 66V
diS/dt = 400A/µs
IS = - 400A
VR = 66V
diS/dt = 400A/µs
Max
400
2000
2.5
4
±400
240
Source - Drain diode ratings and characteristics
Symbol
IS
Typ
Tj = 25°C
1.6
Tj = 125°C
6.8
Unit
A
V
V/ns
ns
µC
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 570A di/dt ≤ 400A/µs
VR ≤ VDSS
Tj ≤ 150°C
APT website – http://www.advancedpower.com
2-6
APTM10UM02FA– Rev 0 May, 2005
Electrical Characteristics
APTM10UM02FA
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Characteristic
Junction to Case
Min
RMS Isolation Voltage, any terminal to case t =1 min, I Isol<1mA, 50/60Hz
Torque
Mounting torque
2500
-40
-40
-40
3
2
Wt
Package Weight
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
For terminals
M6
M5
Typ
Max
0.075
150
125
100
5
3.5
280
Unit
°C/W
V
°C
N.m
g
APT website – http://www.advancedpower.com
3-6
APTM10UM02FA– Rev 0 May, 2005
Package outline (dimensions in mm)
APTM10UM02FA
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.08
0.9
0.07
0.06
0.7
0.05
0.04
0.5
0.03
0.3
0.02
Single Pulse
0.1
0.01
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
480
V GS=15V, 10V & 9V
2000
ID, Drain Current (A)
1500
8V
1000
7V
6V
500
0
V DS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
400
320
240
160
T J=25°C
80
T J=125°C
0
4
8
12
16
20
24
28
0
VDS , Drain to Source Voltage (V)
1.2
Normalized to
V GS=10V @ 200A
1.1
VGS =10V
1
VGS=20V
0.9
1
2
3
4
5
6
VGS , Gate to Source Voltage (V)
7
DC Drain Current vs Case Temperature
600
RDS(on) vs Drain Current
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
T J=-55°C
0
0.8
500
400
300
200
100
0
0
100
200
300
400
ID, Drain Current (A)
500
25
50
75
100
125
150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4-6
APTM10UM02FA– Rev 0 May, 2005
ID, Drain Current (A)
2500
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID= 200A
2.0
1.5
1.0
0.5
0.0
-50 -25
25
50
75 100 125 150
Maximum Safe Operating Area
0.6
1000
limited by
RDSon
100µs
1ms
100
10ms
10
Single pulse
TJ=150°C
1
-50 -25
0
25 50 75 100 125 150
1
Capacitance vs Drain to Source Voltage
100000
Ciss
Coss
10000
Crss
1000
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
10000
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
Threshold Voltage vs Temperature
1.2
ON resistance vs Temperature
2.5
10
100
VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
16
ID=400A
TJ=25°C
14
V DS =20V
12
VDS=50V
10
V DS =80V
8
6
4
2
0
0
400
APT website – http://www.advancedpower.com
800
1200
1600
2000
Gate Charge (nC)
5-6
APTM10UM02FA– Rev 0 May, 2005
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM10UM02FA
APTM10UM02FA
Delay Times vs Current
Rise and Fall times vs Current
300
600
250
400
t d(off)
VDS=66V
RG=1.25Ω
T J=125°C
L=100µH
300
200
t r and tf (ns)
td(on)
200
tf
150
VDS=66V
RG=1.25Ω
T J=125°C
L=100µH
100
50
100
0
0
50
150
250 350 450 550
I D, Drain Current (A)
650
50
250 350 450 550
ID, Drain Current (A)
650
9
VDS=66V
RG=1.25Ω
TJ=125°C
L=100µH
3
Switching Energy (mJ)
4
Eoff
Eon
2
1
0
V DS =66V
ID=400A
T J=125°C
L=100µH
8
7
6
Eoff
5
4
Eon
3
2
1
50
150
250
350
450
550
650
0
2.5
I D, Drain Current (A)
Operating Frequency vs Drain Current
30
20
ZVS
10
0
150
VDS=66V
D=50%
RG=1.25Ω
T J=125°C
T C=75°C
250
ZCS
Hard
switching
350
450
ID, Drain Current (A)
7.5
10
12.5
15
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
50
40
5
Gate Resistance (Ohms)
60
Frequency (kHz)
150
Switching Energy vs Gate Resistance
Switching Energy vs Current
5
Eon and Eoff (mJ)
tr
550
1000
TJ=150°C
100
TJ=25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6-6
APTM10UM02FA– Rev 0 May, 2005
t d(on) and td(off) (ns)
500
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