BAT 62-03W Silicon Schottky Diode • Low Barrier diode for detectors up to GHz frequencies ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 62-03W L Q62702-A1028 Pin Configuration Package 1=A SOD-323 2=C Maximum Ratings Parameter Symbol Diode reverse voltage VR 40 V Forward current IF 40 mA Junction temperature Tj 150 °C Storage temperature Tstg Total power dissipation TS ≤ 85°C Ptot Values Unit - 55 ... + 150 100 mW RthJA ≤ 650 K/W RthJS ≤ 810 Thermal Resistance Junction ambient 1) Junction - soldering point 1) Package mounted on epoxy pcb 15mm x 16.7mmm x 0.7mm Semiconductor Group 1 Mar-07-1996 BAT 62-03W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC characteristics Reverse current IR VR = 40 V, TA = 25 °C Forward voltage µA - - 10 VF IF = 2 mA V - 0.58 1 AC Characteristics Diode capacitance CT VR = 0 , f = 1 MHz Case capacitance - 0.35 0.6 - 0.1 - CC f = 1 MHz Differential resistance pF R0 VR = 0 , f = 10 kHz Series inductance chip to ground Ls Semiconductor Group 2 kΩ - 225 - - 2 - nH Mar-07-1996 BAT 62-03W Forward current IF = f (VF) TA = parameter Leakage current IR = f (VR) TA = Parameter 10 3 10 4 uA uA IF IR TA = 125°C 10 2 TA = 25°C TA = 85°C TA = 125°C TA = -40°C 10 3 TA = 85°C 10 1 10 2 10 0 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V VF 10 -1 0 2.0 Diode capacitance CT = f (VR) f = 1MHz TA = 25°C 5 10 15 20 25 30 V VR 40 Rectifier voltage V0 = f (Vi) f = 900MHz RL = parameter in Ω 10 4 0.5 mV 10 3 CT pF VA 10 2 0.3 10 1 RL=5k RL=20k RL=100k RL=200k RL=1M 10 0 0.2 10 -1 0.1 10 -2 0.0 0 5 10 15 20 V 30 VR Semiconductor Group 3 10 -3 0 10 10 1 10 2 10 3 mV VE Mar-07-1996 BAT 62-03W Package Semiconductor Group 4 Mar-07-1996