Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CC1121 SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 CC1121 High-Performance Low-Power RF Transceiver 1 Device Overview 1.1 Features 1 • High-Performance, Single-Chip Transceiver – Excellent Receiver Sensitivity: • –120 dBm at 1.2 kbps • –110 dBm at 50 kbps – Blocking Performance: 86 dB at 10 MHz – Adjacent Channel Selectivity: 60 dB – Very Low Phase Noise: –111 dBc/Hz at 10-kHz Offset • Separate 128-Byte RX and TX FIFOs • WaveMatch: Advanced Digital Signal Processing for Improved Sync Detect Performance • Support for Seamless Integration With the CC1190 Device for Increased Range Giving up to 3-dB Improvement in Sensitivity and up to +27-dBm Output Power • Power Supply – Wide Supply Voltage Range (2.0 V to 3.6 V) – Low Current Consumption: • RX: 2 mA in RX Sniff Mode • RX: 17-mA Peak Current in Low-Power Mode • RX: 22-mA Peak Current in HighPerformance Mode • TX: 45 mA at +14 dBm – Power Down: 0.12 μA (0.5 μA With eWOR Timer Running) • Programmable Output Power up to +16 dBm With 0.4-dB Step Size 1.2 • • • • Automatic Output Power Ramping • Configurable Data Rates: 1.2 to 200 kbps • Supported Modulation Formats: 2-FSK, 2-GFSK, 4-FSK, 4-GFSK, MSK, OOK • RoHS-Compliant 5-mm x 5-mm No-Lead QFN 32Pin Package (RHB) • Regulations – Suitable for Systems Targeting Compliance With – Europe: ETSI EN 300 220, ETSI EN 54-25 – US: FCC CFR47 Part 15, FCC CFR47 Part 24 – Japan: ARIB STD-T108 • Peripherals and Support Functions – Enhanced Wake-On-Radio Functionality for Automatic Low-Power Receive Polling – Includes Functions for Antenna Diversity Support – Support for Retransmissions – Support for Auto-Acknowledge of Received Packets – TCXO Support and Control, also in Power Modes – Automatic Clear Channel Assessment (CCA) for Listen-Before-Talk (LBT) Systems – Built-in Coding Gain Support for Increased Range and Robustness – Digital RSSI Measurement – Temperature Sensor Applications Ultra-Low Power Wireless Systems With Channel Spacing Down to 50 kHz 169-, 315-, 433-, 868-, 915-, 920-, 950-MHz ISM/SRD Band Systems Wireless Metering and Wireless Smart Grid (AMR and AMI) • • • • • • IEEE 802.15.4g Systems Home and Building Automation Wireless Alarm and Security Systems Industrial Monitoring and Control Wireless Healthcare Applications Wireless Sensor Networks and Active RFID 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CC1121 SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 1.3 www.ti.com Description The CC1121 device is a fully integrated single-chip radio transceiver designed for high performance at very low-power and low-voltage operation in cost-effective wireless systems. All filters are integrated, thus removing the need for costly external SAW and IF filters. The device is mainly intended for the ISM (Industrial, Scientific, and Medical) and SRD (Short Range Device) frequency bands at 274–320 MHz, 410–480 MHz, and 820–960 MHz. The CC1121 device provides extensive hardware support for packet handling, data buffering, burst transmissions, clear channel assessment, link quality indication, and Wake-On-Radio. The main operating parameters of the CC1121 device can be controlled through an SPI interface. In a typical system, the CC1121 device will be used with a microcontroller and only a few external passive components. Device Information (1) PART NUMBER CC1121RHB (1) 1.4 PACKAGE BODY SIZE VQFN (32) 5.00 mm x 5.00 mm For more information, see Section 8, Mechanical Packaging and Orderable Information Functional Diagram Figure 1-1 shows the system block diagram of the CC1121 device. CC112X (optional 32kHz clock intput) Ultra low power 32kHz auto-calibrated RC oscillator 4k byte ROM Power on reset MARC Main Radio Control Unit Ultra low power 16 bit MCU CSn (chip select) SPI Serial configuration and data interface SI (serial input) Interrupt and IO handler System bus SO (serial output) SCLK (serial clock) eWOR Enhanced ultra low power Wake On Radio timer Configuration and status registers Battery sensor / temp sensor 256 byte FIFO RAM buffer Packet handler and FIFO control (optional GPIO0-3) RF and DSP frontend Output power ramping and OOK / ASK modulation I Fully integrated Fractional-N Frequency Synthesizer Q High linearity LNA LNA_N (optional GPIO for antenna diversity) ifamp XOSC XOSC_Q2 90dB dynamic range ADC (optional bit clock) Channel filter ifamp LNA_P XOSC_Q1 Data interface with signal chain access Cordic 14dBm high efficiency PA Modulator PA (optional autodetected external XOSC / TCXO) Highly flexible FSK / OOK demodulator (optional low jitter serial data output for legacy protocols) 90dB dynamic range ADC AGC Automatic Gain Control, 60dB VGA range RSSI measurements and carrier sense detection Figure 1-1. Functional Block Diagram 2 Device Overview Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 CC1121 www.ti.com SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 Table of Contents 1 Device Overview ......................................... 1 1.1 Features .............................................. 1 1.2 Applications ........................................... 1 1.3 Description ............................................ 2 1.4 Functional Diagram ................................... 2 2 3 Revision History ......................................... 4 Terminal Configuration and Functions .............. 5 4 .......................................... 3.2 Pin Configuration ..................................... Specifications ............................................ 4.1 Absolute Maximum Ratings .......................... 4.2 Handling Ratings ..................................... 3.1 4.3 4.4 Pin Diagram 6 7 7 7 Recommended Operating Conditions (General Characteristics) ....................................... 7 Thermal Resistance Characteristics for RHB Package .............................................. 7 RF Characteristics .................................... 8 4.6 ................................ 9 Current Consumption, Static Modes ................. 9 Current Consumption, Transmit Modes .............. 9 Current Consumption, Receive Modes.............. 10 Receive Parameters................................. 11 Transmit Parameters ................................ 14 PLL Parameters ..................................... 15 Wake-up and Timing ................................ 16 32-MHz Crystal Oscillator ........................... 16 32-MHz Clock Input (TCXO) ....................... 16 4.8 4.9 4.10 4.11 4.12 4.13 4.14 4.15 5 5 4.5 4.7 4.16 Regulatory Standards 6 7 8 32-kHz Clock Input .................................. 17 ............................... ....................................... 4.19 Temperature Sensor ................................ 4.20 Typical Characteristics .............................. Detailed Description ................................... 5.1 Block Diagram....................................... 5.2 Frequency Synthesizer .............................. 5.3 Receiver ............................................. 5.4 Transmitter .......................................... 5.5 Radio Control and User Interface ................... 5.6 Enhanced Wake-On-Radio (eWOR) ................ 5.7 Sniff Mode ........................................... 5.8 Antenna Diversity ................................... 5.9 Low-Power and High-Performance Mode........... 5.10 WaveMatch .......................................... Typical Application Circuit ........................... Device and Documentation Support ............... 7.1 Device Support ...................................... 7.2 Documentation Support ............................. 7.3 Community Resources .............................. 7.4 Trademarks.......................................... 7.5 Electrostatic Discharge Caution ..................... 7.6 Glossary ............................................. 4.17 32-kHz RC Oscillator 17 4.18 I/O and Reset 17 17 18 20 20 20 21 21 21 21 22 22 22 23 24 25 25 26 26 26 26 26 Mechanical Packaging and Orderable Information .............................................. 27 Table of Contents Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 3 CC1121 SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 www.ti.com 2 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. This data manual revision history highlights the changes made to the SWRS111E device-specific data manual to make it an SWRS111F revision. Changes from Revision E (July 2014) to Revision F • • 4 Page Added Ambient to the temperature range condition and removed Tj from Temperature range ........................... 7 Added data to TCXO table ......................................................................................................... 16 Revision History Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 CC1121 www.ti.com SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 3 Terminal Configuration and Functions 3.1 Pin Diagram 25 AVDD_PFD_CHP 26 DCPL_PFD_CHP 27 AVDD_SYNTH2 28 AVDD_XOSC DCPL_XOSC 29 30 XOSC_Q1 XOSC_Q2 31 32 EXT_XOSC Figure 3-1 shows pin names and locations for the CC1121 device. VDD_GUARD 1 24 LPF1 RESET_N 2 23 LPF0 GPIO3 3 22 AVDD_SYNTH1 GPIO2 4 21 DCPL_VCO DVDD 5 20 LNA_N DCPL 6 SI 7 SCLK 8 CC1121 19 LNA_P GND GROUND PAD 18 TRX_SW 17 PA 11 12 13 14 15 16 GPIO0 CSn DVDD AVDD_IF RBIAS AVDD_RF N.C. SO (GPIO1) 10 9 Figure 3-1. Package 5-mm × 5-mm QFN Terminal Configuration and Functions Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 5 CC1121 SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 3.2 www.ti.com Pin Configuration The following table lists the pinout configuration for the CC1121 device. PIN NO. PIN NAME TYPE / DIRECTION DESCRIPTION 1 VDD_GUARD Power 2.0–3.6 V VDD 2 RESET_N Digital input Asynchronous, active-low digital reset 3 GPIO3 Digital I/O General-purpose I/O 4 GPIO2 Digital I/O General-purpose I/O 5 DVDD Power 2.0–3.6 V VDD to internal digital regulator 6 DCPL Power Digital regulator output to external decoupling capacitor 7 SI Digital input Serial data in 8 SCLK Digital input Serial data clock 9 SO(GPIO1) Digital I/O Serial data out (general-purpose I/O) 10 GPIO0 Digital I/O General-purpose I/O 11 CSn Digital Input Active-low chip select 12 DVDD Power 2.0–3.6 V VDD 13 AVDD_IF Power 2.0–3.6 V VDD 14 RBIAS Analog External high-precision R 15 AVDD_RF Power 2.0–3.6 V VDD 16 N.C. 17 PA Analog Single-ended TX output (requires DC path to VDD) 18 TRX_SW Analog TX and RX switch. Connected internally to GND in TX and floating (highimpedance) in RX. 19 LNA_P Analog Differential RX input (requires DC path to GND) 20 LNA_N Analog Differential RX input (requires DC path to GND) 21 DCPL_VCO Power Pin for external decoupling of VCO supply regulator 22 AVDD_SYNTH1 Power 2.0–3.6 V VDD 23 LPF0 Analog External loop filter components 24 LPF1 25 AVDD_PFD_CHP Power 2.0–3.6 V VDD 26 DCPL_PFD_CHP Power Pin for external decoupling of PFD and CHP regulator 27 AVDD_SYNTH2 Power 2.0–3.6 V VDD 28 AVDD_XOSC Power 2.0–3.6 V VDD 29 DCPL_XOSC Power Pin for external decoupling of XOSC supply regulator 30 XOSC_Q1 Analog Crystal oscillator pin 1 (must be grounded if a TCXO or other external clock connected to EXT_XOSC is used) 31 XOSC_Q2 Analog Crystal oscillator pin 2 (must be left floating if a TCXO or other external clock connected to EXT_XOSC is used) 32 EXT_XOSC Digital input Pin for external XOSC input (must be grounded if a regular XOSC connected to XOSC_Q1 and XOSC_Q2 is used) – GND Ground pad The ground pad must be connected to a solid ground plane. 6 Not connected External loop filter components Terminal Configuration and Functions Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 CC1121 www.ti.com SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 4 Specifications All measurements performed on CC1120EM_868_915 CC1120EM_420_470 rev.1.0.1, or CC1120EM_169 rev.1.2. rev.1.0.1, CC1120EM_955 rev.1.2.1, Absolute Maximum Ratings (1) (2) 4.1 over operating free-air temperature range (unless otherwise noted) PARAMETER MIN Supply voltage (VDD, AVDD_x) –0.3 MAX Input RF level UNIT 3.9 V +10 dBm Voltage on any digital pin –0.3 VDD+0.3 V Voltage on analog pins (including DCPL pins) –0.3 2.0 V (1) (2) All supply pins must have the same voltage max 3.9 V Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under general characteristics is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to VSS, unless otherwise noted. 4.2 Handling Ratings Tstg Storage temperature range Electrostatic discharge (ESD) performance: VESD (1) (2) CONDITION Human body model (HBM), per ANSI/ESDA/JEDEC JS001 Charged device model (CDM), per JESD22C101 (2) (1) All pins MIN MAX UNIT –40 125 °C –2 2 kV –500 500 V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V HBM allows safe manufacturing with a standard ESD control process. 4.3 Recommended Operating Conditions (General Characteristics) PARAMETER MIN MAX UNIT Voltage supply range 2.0 3.6 V 0 VDD V –40 85 °C Voltage on digital inputs Temperature range 4.4 TYP CONDITION All supply pins must have the same voltage Ambient Thermal Resistance Characteristics for RHB Package °C/W (1) AIR FLOW (m/s) (2) 21.1 0.00 RθJC Junction-to-case (top) RθJB Junction-to-board 5.3 0.00 RθJA Junction-to-free air 31.3 0.00 PsiJT Junction-to-package top 0.2 0.00 PsiJB Junction-to-board 5.3 0.00 RθJC Junction-to-case (bottom) 0.8 0.00 (1) (2) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RΘJC] value, which is based on a JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these EIA/JEDEC standards: • JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air) • JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages • JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages • JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements Power dissipation of 40 mW and an ambient temperature of 25ºC is assumed. m/s = meters per second Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 7 CC1121 SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 4.5 www.ti.com RF Characteristics PARAMETER MIN MAX UNIT 820 TYP 960 MHz 410 480 MHz (273.3) (320) MHz Frequency bands 164 192 MHz (205) (240) MHz (136.7) (160) MHz Frequency resolution Data rate step size 8 For more information, see application note AN115, Using the CC112x/CC1175 at 274 to 320 MHz. Please contact TI for more information about the use of these frequency bands. 30 Hz In 820- to 950-MHz band 15 Hz In 410- to 480-MHz band Hz In 164- to 192-MHz band 6 Data rate CONDITION 0 200 kbps Packet mode 0 100 kbps Transparent mode 1e-4 Specifications bps Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 CC1121 www.ti.com 4.6 SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 Regulatory Standards PERFORMANCE MODE FREQUENCY BAND ARIB T-108 ARIB T-96 ETSI EN 300 220, receiver category 2 ETSI EN 54-25 FCC PART 24 Submask D FCC Part 15.247 FCC Part 15.249 Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender such as the CC1190 device ETSI EN 300 220, category 2 Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender 164–192 MHz ETSI EN 300 220, category 2 Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender 820–960 MHz ETSI EN 300 220, category 2 FCC Part 15.247 FCC Part 15.249 410–480 MHz ETSI EN 300 220, category 2 164–192 MHz ETSI EN 300 220, category 2 820–960 MHz High-performance mode SUITABLE FOR COMPLIANCE WITH COMMENTS 410–480 MHz Low-power mode 4.7 Current Consumption, Static Modes TA = 25°C, VDD = 3.0 V if nothing else stated PARAMETER MIN Power down with retention TYP MAX UNIT 0.12 1 µA CONDITION 0.5 µA Low-power RC oscillator running XOFF mode 170 µA Crystal oscillator / TCXO disabled IDLE mode 1.3 mA Clock running, system waiting with no radio activity 4.8 4.8.1 Current Consumption, Transmit Modes 950-MHz Band (High-Performance Mode) TA = 25°C, VDD = 3.0 V if nothing else stated PARAMETER MIN TYP MAX UNIT TX current consumption +10 dBm 37 mA TX current consumption 0 dBm 26 mA 4.8.2 CONDITION 868-, 915-, and 920-MHz Bands (High-Performance Mode) TA = 25°C, VDD = 3.0 V if nothing else stated PARAMETER MIN TYP MAX UNIT TX current consumption +14 dBm 45 mA TX current consumption +10 dBm 34 mA CONDITION Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 9 CC1121 SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 4.8.3 www.ti.com 434-MHz Band (High-Performance Mode) TA = 25°C, VDD = 3.0 V if nothing else stated PARAMETER MIN TYP MAX UNIT TX current consumption +15 dBm 50 mA TX current consumption +14 dBm 45 mA TX current consumption +10 dBm 34 mA 4.8.4 CONDITION 169-MHz Band (High-Performance Mode) TA = 25°C, VDD = 3.0 V if nothing else stated PARAMETER MIN TYP MAX UNIT TX current consumption +15 dBm 54 mA TX current consumption +14 dBm 49 mA TX current consumption +10 dBm 41 mA 4.8.5 CONDITION Low-Power Mode TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated PARAMETER MIN TX current consumption +10 dBm 4.9 TYP MAX 32 UNIT CONDITION mA Current Consumption, Receive Modes 4.9.1 High-Performance Mode TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated PARAMETER MIN TYP MAX UNIT CONDITION 2 mA Using RX sniff mode, where the receiver wakes up at regular intervals to look for an incoming packet 433-, 868-, 915-, 920-, and 950-MHz bands 22 mA 169-MHz band 23 mA Peak current consumption during packet reception at the sensitivity threshold Average current consumption Check for data packet every 1 second using Wake-on-Radio 15 µA RX wait for sync 1.2 kbps, 4-byte preamble RX peak current 4.9.2 50 kbps, 5-byte preamble, 40-kHz RC oscillator used as sleep timer Low-Power Mode TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated PARAMETER MIN TYP MAX UNIT RX peak current low-power RX mode 1.2 kbps 10 17 Specifications mA CONDITION Peak current consumption during packet reception at the sensitivity level Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 CC1121 www.ti.com SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 4.10 Receive Parameters All RX measurements made at the antenna connector, to a bit error rate (BER) limit of 1%. 4.10.1 General Receive Parameters (High-Performance Mode) TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated PARAMETER MIN TYP Saturation Digital channel filter programmable bandwidth MAX UNIT +10 CONDITION dBm 41.7 200 kHz IIP3, normal mode –14 dBm At maximum gain IIP3, high linearity mode –8 dBm Using 6-dB gain reduction in front end ±12 % With carrier sense detection enabled and assuming 4-byte preamble ±0.2 % With carrier sense detection disabled –56 dBm < –57 dBm Data rate offset tolerance Spurious emissions 1–13 GHz (VCO leakage at 3.5 GHz) 30 MHz to 1 GHz Radiated emissions measured according to ETSI EN 300 220, fc = 869.5 MHz Optimum source impedance 868-, 915-, and 920-MHz bands 60 + j60 / 30 + j30 Ω 433-MHz band 100 + j60 / 50+ j30 Ω 169-MHz band 140 + j40 / 70 + j20 Ω (Differential or single-ended RX configurations) 4.10.2 RX Performance in 950-MHz Band (High-Performance Mode) TA = 25°C, VDD = 3.0 V if nothing else stated PARAMETER MIN Sensitivity Note: Sensitivity can be improved if the TX and RX matching networks are separated. Blocking and selectivity 1.2-kbps 2FSK, 50-kHz channel separation, 20-kHz deviation, 50-kHz channel filter Blocking and selectivity 50-kbps 2GFSK, 200-kHz channel separation, 25-kHz deviation, 100-kHz channel filter (Same modulation format as 802.15.4g Mandatory Mode) Blocking and selectivity 200-kbps 4GFSK, 83-kHz deviation (outer symbols), 200-kHz channel filter, zero IF (1) (2) TYP Max UNIT CONDITION –114 dBm 1.2 kbps, DEV=20 kHz CHF=50 kHz (1) –107 dBm 50 kbps 2GFSK, DEV=25 kHz, CHF=100 kHz (1) –100 dBm 200 kbps, DEV=83 kHz (outer symbols), CHF=200 kHz, 4GFSK (2) 47 dB ± 50 kHz (adjacent channel) 48 dB + 100 kHz (alternate channel) 69 dB ± 1 MHz 71 dB ± 2 MHz 78 dB ± 10 MHz 43 dB ± 200 kHz (adjacent channel) 51 dB ± 400 kHz (alternate channel) 62 dB ± 1 MHz 65 dB ± 2 MHz 71 dB ± 10 MHz 37 dB ± 200 kHz (adjacent channel) 44 dB ± 400 kHz (alternate channel) 55 dB ± 1 MHz 58 dB ± 2 MHz 64 dB ± 10 MHz DEV is short for deviation, CHF is short for Channel Filter Bandwidth BT=0.5 is used in all GFSK measurements Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 11 CC1121 SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 www.ti.com 4.10.3 RX Performance in 868-, 915-, and 920-MHz Bands (High-Performance Mode) TA = 25°C, VDD = 3.0 V if nothing else stated PARAMETER MIN Sensitivity Blocking and selectivity 1.2-kbps 2FSK, 50-kHz channel separation, 20-kHz deviation, 50-kHz channel filter Blocking and selectivity 38.4-kbps 2GFSK, 100-kHz channel separation, 20-kHz deviation, 100-kHz channel filter Blocking and selectivity 50-kbps 2GFSK, 200-kHz channel separation, 25-kHz deviation, 100-kHz channel filter (Same modulation format as 802.15.4g Mandatory Mode) Blocking and selectivity 200-kbps 4GFSK, 83-kHz deviation (outer symbols), 200-kHz channel filter, zero IF (1) TYP MAX UNIT CONDITION –120 dBm 1.2 kbps, DEV=10 kHz CHF=41.7 kHz (1), using increased RX filtering –117 dBm 1.2 kbps, DEV=20 kHz CHF=50 kHz (1) –114 dBm 4.8 kbps OOK –110 dBm 38.4 kbps, DEV=20 kHz CHF=100 kHz (1) –110 dBm 50 kbps 2GFSK, DEV=25 kHz, CHF=100 kHz (1) –103 dBm 200 kbps, DEV=83 kHz (outer symbols), CHF=200 kHz (1), 4GFSK 48 dB ± 50 kHz (adjacent channel) 48 dB ± 100 kHz (alternate channel) 69 dB ± 1 MHz 74 dB ± 2 MHz 81 dB ± 10 MHz 42 dB + 100 kHz (adjacent channel) 43 dB ± 200 kHz (alternate channel) 62 dB ± 1 MHz 66 dB ± 2 MHz 74 dB ± 10 MHz 43 dB ± 200 kHz (adjacent channel) 50 dB ± 400 kHz (alternate channel) 61 dB ± 1 MHz 65 dB ± 2 MHz 74 dB ± 10 MHz 36 dB ± 200 kHz (adjacent channel) 44 dB ± 400 kHz (alternate channel) 55 dB ± 1 MHz 59 dB ± 2 MHz 67 dB ± 10 MHz DEV is short for deviation, CHF is short for Channel Filter Bandwidth 4.10.4 RX Performance in 434-MHz Band (High-Performance Mode) TA = 25°C, VDD = 3.0 V if nothing else stated PARAMETER Sensitivity Blocking and selectivity 1.2-kbps 2FSK, 50-kHz channel separation, 20-kHz deviation, 50-kHz channel filter Blocking and selectivity 38.4-kbps 2GFSK, 100-kHz channel separation, 20-kHz deviation, 100-kHz channel filter (1) 12 MIN UNIT CONDITION –109 TYP MAX dBm 50 kbps 2GFSK, DEV=25 kHz, CHF=100 kHz (1) –116 dBm 1.2 kbps, DEV=20 kHz CHF=50 kHz (1) 54 dB ± 50 kHz (adjacent channel) 54 dB + 100 kHz (alternate channel) 74 dB ± 1 MHz 78 dB ± 2 MHz 86 dB ± 10 MHz 47 dB + 100 kHz (adjacent channel) 50 dB ± 200 kHz (alternate channel) 67 dB ± 1 MHz 71 dB ± 2 MHz 78 dB ± 10 MHz DEV is short for deviation, CHF is short for Channel Filter Bandwidth Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 CC1121 www.ti.com SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 4.10.5 RX Performance in 169-MHz Band (High-Performance Mode) TA = 25°C, VDD = 3.0 V if nothing else stated PARAMETER MIN Sensitivity Blocking and selectivity 1.2-kbps 2FSK, 50-kHz channel separation, 20-kHz deviation, 50-kHz channel filter (1) UNIT CONDITION –117 TYP MAX dBm 1.2 kbps, DEV=20 kHz CHF=50 kHz (1) 60 dB ± 50 kHz (adjacent channel) 60 dB + 100 kHz (alternate channel) 76 dB ± 1 MHz 77 dB ± 2 MHz 83 dB ± 10 MHz DEV is short for deviation, CHF is short for Channel Filter Bandwidth 4.10.6 RX Performance in Low-Power Mode TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated PARAMETER MIN Sensitivity Blocking and selectivity 1.2-kbps 2FSK, 50-kHz channel separation, 20-kHz deviation, 50-kHz channel filter Blocking and selectivity 38.4-kbps 2GFSK, 100-kHz channel separation, 20-kHz deviation, 100-kHz channel filter Blocking and selectivity 50-kbps 2GFSK, 200-kHz channel separation, 25-kHz deviation, 100-kHz channel filter (Same modulation format as 802.15.4g Mandatory Mode) Saturation (1) TYP MAX UNIT CONDITION –99 dBm 38.4 kbps, DEV=50 kHz CHF=100 kHz (1) –99 dBm 50 kbps 2GFSK, DEV=25 kHz, CHF=100 kHz (1) 43 dB ± 50 kHz (adjacent channel) 45 dB + 100 kHz (alternate channel) 71 dB ± 1 MHz 74 dB ± 2 MHz 75 dB ± 10 MHz 37 dB + 100 kHz (adjacent channel) 43 dB + 200 kHz (alternate channel) 58 dB ± 1 MHz 62 dB ± 2 MHz 64 dB + 10 MHz 43 dB + 200 kHz (adjacent channel) 52 dB + 400 kHz (alternate channel) 60 dB ± 1 MHz 64 dB ± 2 MHz 65 dB ± 10 MHz +10 dBm DEV is short for deviation, CHF is short for Channel Filter Bandwidth Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 13 CC1121 SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 www.ti.com 4.11 Transmit Parameters TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated PARAMETER UNIT CONDITION +12 dBm At 950 MHz +14 dBm At 915- and 920-MHz +15 dBm At 915- and 920-MHz with VDD = 3.6 V +15 dBm At 868 MHz +16 dBm At 868 MHz with VDD = 3.6 V +15 dBm At 433 MHz +16 dBm At 433 MHz with VDD = 3.6 V +15 dBm At 169 MHz +16 dBm At 169 MHz with VDD = 3.6 V –11 dBm Within fine step size range –40 dBm Within coarse step size range 0.4 dB Within fine step size range –75 dBc 4-GFSK 9.6 kbps in 12.5-kHz channel, measured in 100-Hz bandwidth at 434 MHz (FCC Part 90 Mask D compliant) –58 dBc 4-GFSK 9.6 kbps in 12.5-kHz channel, measured in 8.75-kHz bandwidth (ETSI 300 220 compliant) –61 dBc 2-GFSK 2.4 kbps in 12.5-kHz channel, 1.2-kHz deviation <–60 dBm Second Harm, 169 MHz –39 dBm Third Harm, 169 MHz –58 dBm Second Harm, 433 MHz –56 dBm Third Harm, 433 MHz –51 dBm Second Harm, 450 MHz –60 dBm Third Harm, 450 MHz –45 dBm Second Harm, 868 MHz –40 dBm Third Harm, 868 MHz –42 dBm Second Harm, 915 MHz 56 dBuV/m Third Harm, 915 MHz 52 dBuV/m Fourth Harm, 915 MHz 60 dBuV/m Second Harm, 950 MHz –58 dBm Third Harm, 950 MHz –42 dBm Max output power Min output power Output power step size Adjacent channel power Spurious emissions (not including harmonics) MIN TYP MAX Harmonics Transmission at +14 dBm (or maximum allowed in applicable band where this is less than +14 dBm) using TI reference design. Emissions measured according to ARIB T-96 in 950-MHz band, ETSI EN 300 220 in 169-, 433-, and 868-MHz bands and FCC Part 15.247 in 450- and 915-MHz band Fourth harmonic in 915-MHz band will require extra filtering to meet FCC requirements if transmitting for long intervals (>50ms periods). Optimum load Impedance 868-, 915-, and 920MHz bands 35 + j35 Ω 433-MHz band 55 + j25 Ω 169-MHz band 80 + j0 Ω 14 Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 CC1121 www.ti.com SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 4.12 PLL Parameters 4.12.1 High-Performance Mode TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated PARAMETER MIN Phase noise in 950-MHz band Phase noise in 868-, 915-, and 920-MHz bands Phase noise in 433-MHz band Phase noise in 169-MHz band TYP MAX UNIT CONDITION –99 dBc/Hz ± 10 kHz offset –99 dBc/Hz ± 100 kHz offset –123 dBc/Hz ± 1 MHz offset –99 dBc/Hz ± 10 kHz offset –100 dBc/Hz ± 100 kHz offset –122 dBc/Hz ± 1 MHz offset –106 dBc/Hz ± 10 kHz offset –107 dBc/Hz ± 100 kHz offset –127 dBc/Hz ± 1 MHz offset –111 dBc/Hz ± 10 kHz offset –116 dBc/Hz ± 100 kHz offset –135 dBc/Hz ± 1 MHz offset UNIT CONDITION 4.12.2 Low-Power Mode TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated PARAMETER Phase noise in 950-MHz band Phase noise in 868- and 915-MHz bands Phase noise in 433-MHz band Phase noise in 169-MHz band MIN TYP MAX –90 dBc/Hz ± 10 kHz offset –92 dBc/Hz ± 100 kHz offset –124 dBc/Hz ± 1 MHz offset –95 dBc/Hz ± 10 kHz offset –95 dBc/Hz ± 100 kHz offset –124 dBc/Hz ± 1 MHz offset –98 dBc/Hz ± 10 kHz offset –102 dBc/Hz ± 100 kHz offset –129 dBc/Hz ± 1 MHz offset –106 dBc/Hz ± 10 kHz offset –110 dBc/Hz ± 100 kHz offset –136 dBc/Hz ± 1 MHz offset Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 15 CC1121 SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 www.ti.com 4.13 Wake-up and Timing TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated PARAMETER MIN TYP Powerdown to IDLE IDLE to RX/TX RX/TX turnaround RX/TX to IDLE time MAX UNIT CONDITION 0.4 ms Depends on crystal 166 µs Calibration disabled 461 µs Calibration enabled 50 µs 296 µs Calibrate when leaving RX/TX enabled 0 µs Calibrate when leaving RX/TX disabled Frequency synthesizer calibration 391 µs When using SCAL strobe Minimum required number of preamble bytes 0.5 bytes Time from start RX until valid RSSI Including gain settling (function of channel bandwidth). Programmable for trade-off between speed and accuracy 0.3 ms 200-kHz channels UNIT CONDITION MHz It is expected that there will be degraded sensitivity at multiples of XOSC/2 in RX, and an increase in spurious emissions when the RF channel is close to multiples of XOSC in TX. We recommend that the RF channel is kept RX_BW/2 away from XOSC/2 in RX, and that the level of spurious emissions be evaluated if the RF channel is closer than 1 MHz to multiples of XOSC in TX. Required for RF front-end gain settling only. Digital demodulation does not require preamble for settling. 4.14 32-MHz Crystal Oscillator TA = 25°C, VDD = 3.0 V if nothing else stated PARAMETER Crystal frequency MIN TYP 32 MAX 33.6 Load capacitance (CL) 10 ESR pF 60 Start-up time 0.4 Ω Simulated over operating conditions ms Depends on crystal CONDITION 4.15 32-MHz Clock Input (TCXO) TA = 25°C, VDD = 3.0 V if nothing else stated PARAMETER MAX UNIT 32 33.6 MHz High input voltage 1.4 VDD V Low input voltage 0 0.6 V 2 ns 1.5 V Clock frequency MIN TYP TCXO with CMOS output Rise / Fall time Clipped sine output Clock input amplitude (peak-to-peak) 16 0.8 Specifications TCXO with CMOS output directly coupled to pin EXT_OSC TCXO clipped sine output connected to pin EXT_OSC through series capacitor Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 CC1121 www.ti.com SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 4.16 32-kHz Clock Input TA = 25°C, VDD = 3.0 V if nothing else stated PARAMETER MIN Clock frequency 32-kHz clock input pin input high voltage TYP MAX 32 UNIT CONDITION kHz 0.8×VDD V 32-kHz clock input pin input low voltage 0.2×VDD V MAX UNIT 4.17 32-kHz RC Oscillator TA = 25°C, VDD = 3.0 V if nothing else stated PARAMETER MIN Frequency TYP 32 kHz Frequency accuracy after calibration ±0.1 % Initial calibration time 1.6 ms CONDITION After calibration Relative to frequency reference (that is, 32-MHz crystal or TCXO) 4.18 I/O and Reset TA = 25°C, VDD = 3.0 V if nothing else stated PARAMETER Logic input high voltage MIN TYP 0.2×VDD 0.8×VDD CONDITION V V Logic output low voltage 0.2×VDD Power-on reset threshold UNIT V Logic input low voltage Logic output high voltage MAX 0.8×VDD 1.3 V V At 4-mA output load or less Voltage on DVDD pin 4.19 Temperature Sensor TA = 25°C, VDD = 3.0 V if nothing else stated PARAMETER MIN Temperature sensor range –40 TYP MAX UNIT 85 °C Temperature coefficient 2.66 mV / °C Typical output voltage 794 mV VDD coefficient 1.17 mV / V CONDITION Change in sensor output voltage versus change in temperature Typical sensor output voltage at TA = 25°C, VDD = 3.0 V Change in sensor output voltage versus change in VDD The CC1121 device can be configured to provide a voltage proportional to temperature on GPIO1. The temperature can be estimated by measuring this voltage (See Section 4.19, Temperature Sensor). For more information, see the temperature sensor design note (SWRA415). Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 17 CC1121 SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 www.ti.com 4.20 Typical Characteristics TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated. All measurements performed on CC1120EM_868_915 rev.1.0.1, CC1120EM_955 rev.1.2.1, CC1120EM_420_470 rev.1.0.1 or CC1120EM_169 rev.1.2. Figure 4-6 was measured at the 50-Ω antenna connector. 60 17 Output Power (dBm) 40 30 20 10 0 16.5 16 15.5 -40 43 47 4B 53 4F 57 5B 63 5F 67 6B 73 6F 77 7B 7F 15 PA power setting 18 20 16 10 Output Power (dBm) 14 80 12 10 8 0 -10 -20 -30 -40 Supply Voltage (V) Figure 4-3. Output Power vs Voltage Max Setting, 170 MHz 200 kbps, DEV = 83 kHz (Outer Symbols), 4GFSK Figure 4-5. Eye Diagram 47 43 4B 53 4F 57 5B 3.5 63 5F 3 67 2.5 6B 2 73 6F -50 6 7F 7B Output Power (dBm) 40 Temperature (ºC) Figure 4-2. Output Power vs Temperature Max Setting, 170 MHz, 3.6 V Figure 4-1. TX Current at 868 MHz vs PA Power Setting 18 0 77 TX Current (mA) 50 PA power setting Figure 4-4. Output Power at 868 MHz vs PA Power Setting Figure 4-6. Output Power vs Load Impedance (+14-dBm Setting) Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 CC1121 www.ti.com SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 Typical Characteristics (continued) Figure 4-8. Phase Noise in 868-MHz Band 3.1 GPIO Output Low Voltage (mV) GPIO Output High Voltage (V) 9.6 kbps in 12.5-kHz Channel Figure 4-7. FCC Part 90 Mask D 2.9 2.7 2.5 2.3 2.1 1.9 1.7 1.5 0 5 10 15 20 25 30 35 1400 1200 1000 800 600 400 200 0 0 5 10 15 20 25 30 35 Current (mA) Current (mA) Figure 4-9. GPIO Output High Voltage vs Current Being Sourced Figure 4-10. GPIO Output Low Voltage vs Current Being Sinked Specifications Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 19 CC1121 SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 www.ti.com 5 Detailed Description 5.1 Block Diagram Figure 5-1 shows the system block diagram of the CC1121 device. CC112X (optional 32kHz clock intput) Ultra low power 32kHz auto-calibrated RC oscillator 4k byte ROM Power on reset MARC Main Radio Control Unit Ultra low power 16 bit MCU CSn (chip select) SPI Serial configuration and data interface SI (serial input) Interrupt and IO handler System bus SO (serial output) SCLK (serial clock) eWOR Enhanced ultra low power Wake On Radio timer Configuration and status registers Battery sensor / temp sensor 256 byte FIFO RAM buffer Packet handler and FIFO control (optional GPIO0-3) RF and DSP frontend Output power ramping and OOK / ASK modulation I Fully integrated Fractional-N Frequency Synthesizer Q (optional GPIO for antenna diversity) ifamp XOSC XOSC_Q2 90dB dynamic range ADC (optional bit clock) Cordic High linearity LNA LNA_N Data interface with signal chain access Channel filter ifamp LNA_P XOSC_Q1 Modulator 14dBm high efficiency PA PA (optional autodetected external XOSC / TCXO) Highly flexible FSK / OOK demodulator (optional low jitter serial data output for legacy protocols) 90dB dynamic range ADC AGC Automatic Gain Control, 60dB VGA range RSSI measurements and carrier sense detection Figure 5-1. System Block Diagram 5.2 Frequency Synthesizer At the center of the CC1121 device there is a fully integrated, fractional-N, ultra-high-performance frequency synthesizer. The frequency synthesizer is designed for excellent phase noise performance, providing very high selectivity and blocking performance. The system is designed to comply with the most stringent regulatory spectral masks at maximum transmit power. Either a crystal can be connected to XOSC_Q1 and XOSC_Q2, or a TCXO can be connected to the EXT_XOSC input. The oscillator generates the reference frequency for the synthesizer, as well as clocks for the analog-to-digital converter (ADC) and the digital part. To reduce system cost, CC1121 device has high-accuracy frequency estimation and compensation registers to measure and compensate for crystal inaccuracies. This compensation enables the use of lower cost crystals. If a TCXO is used, the CC1121 device automatically turns on and off the TCXO when needed to support low-power modes and Wake-OnRadio operation. 20 Detailed Description Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 CC1121 www.ti.com 5.3 SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 Receiver The CC1121 device features a highly flexible receiver. The received RF signal is amplified by the lownoise amplifier (LNA) and is down-converted in quadrature (I/Q) to the intermediate frequency (IF). At IF, the I/Q signals are digitized by the high dynamic-range ADCs. An advanced automatic gain control (AGC) unit adjusts the front-end gain, and enables the CC1121 device to receive strong and weak signals, even in the presence of strong interferers. High-attenuation channels and data filtering enable reception with strong neighbor channel interferers. The I/Q signal is converted to a phase and magnitude signal to support both FSK and OOK modulation schemes. NOTE A unique I/Q compensation algorithm removes any problem of I/Q mismatch, thus avoiding time consuming and costly I/Q image calibration steps. 5.4 Transmitter The CC1121 transmitter is based on direct synthesis of the RF frequency (in-loop modulation). To use the spectrum effectively, the CC1121 device has extensive data filtering and shaping in TX mode to support high throughput data communication in narrowband channels. The modulator also controls power ramping to remove issues such as spectral splattering when driving external high-power RF amplifiers. 5.5 Radio Control and User Interface The CC1121 digital control system is built around the main radio control (MARC), which is implemented using an internal high-performance, 16-bit ultra-low-power processor. MARC handles power modes, radio sequencing and protocol timing. A 4-wire SPI serial interface is used for configuration and data buffer access. The digital baseband includes support for channel configuration, packet handling, and data buffering. The host MCU can stay in power-down mode until a valid RF packet is received. This greatly reduces power consumption. When the host MCU receives a valid RF packet, it burst-reads the data. This reduces the required computing power. The CC1121 radio control and user interface are based on the widely used the CC1101 transceiver. This relationship enables an easy transition between the two platforms. The command strobes and the main radio states are the same for the two platforms. For legacy formats, the CC1121 device also supports two serial modes: • Synchronous serial mode: The CC1121 device performs bit synchronization and provides the MCU with a bit clock with associated data. • Transparent mode: The CC1121 outputs the digital baseband signal using a digital interpolation filter to eliminate jitter introduced by digital filtering and demodulation. 5.6 Enhanced Wake-On-Radio (eWOR) eWOR, using a flexible integrated sleep timer, enables automatic receiver polling with no intervention from the MCU. The CC1121 device enters RX mode, it listens and then returns to sleep if a valid RF packet is not received. The sleep interval and duty cycle can be configured to make a trade-off between network latency and power consumption. Incoming messages are time-stamped to simplify timer resynchronization. The eWOR timer runs off an ultra-low-power 32-kHz RC oscillator. To improve timing accuracy, the RC oscillator can be automatically calibrated to the RF crystal in configurable intervals. Detailed Description Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 21 CC1121 SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 5.7 www.ti.com Sniff Mode The CC1121 device supports very quick start up times, and requires very few preamble bits. Sniff mode uses these conditions to dramatically reduce the current consumption while the receiver is waiting for data. Because the CC1121 can wake up and settle much faster than the duration of most preambles, it is not required to be in RX mode continuously while waiting for a packet to arrive. Instead, the enhanced WakeOn-Radio feature can be used to put the device into sleep periodically. By setting an appropriate sleep time, the CC1121 device can wake up and receive the packet when it arrives with no performance loss. This sequence removes the need for accurate timing synchronization between transmitter and receiver, and lets the user to trade off current consumption between the transmitter and receiver. For more information, see the sniff mode design note (SWRA428). 5.8 Antenna Diversity Antenna diversity can increase performance in a multipath environment. An external antenna switch is required. The CC1121 device uses one of the GPIO pins to automatically control the switch. The device also supports differential output control signals typically used in RF switches. If antenna diversity is enabled, the GPIO alternates between high and low states until a valid RF input signal is detected. An optional acknowledge packet can be transmitted without changing the state of the GPIO. An incoming RF signal can be validated by received signal strength or by using the automatic preamble detector. Using the automatic preamble detector ensures a more robust system and avoids the need to set a defined signal strength threshold (such a threshold sets the sensitivity limit of the system). 5.9 Low-Power and High-Performance Mode The CC1121 device is highly configurable, enabling trade-offs between power and performance based on the needs of the application. This data sheet describes two modes: low-power mode and highperformance mode. These modes represent configurations where the device is optimized for either power or performance. 22 Detailed Description Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 CC1121 www.ti.com SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 5.10 WaveMatch Advanced capture logic locks onto the synchronization word and does not require preamble settling bytes. Therefore, receiver settling time is reduced to the settling time of the AGC, typically 4 bits. The WaveMatch feature also greatly reduces false sync triggering on noise, further reducing the power consumption and improving sensitivity and reliability. The same logic can also be used as a highperformance preamble detector to reliably detect a valid preamble in the channel. See SWRC046 for more information. Figure 5-2. Receiver Configurator in SmartRF™ Studio Detailed Description Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 23 CC1121 SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 www.ti.com 6 Typical Application Circuit NOTE This section is intended only as an introduction. Very few external components are required for the operation of the CC1121 device. Figure 6-1 shows a typical application circuit. The board layout will greatly influence the RF performance of the CC1121 device. Figure 6-1 does not show decoupling capacitors for power pins. Optional vdd 25 AVDD_PFD_CHP vdd VDD_GUARD DCPL_PFD_CHP 26 vdd AVDD_SYNTH2 27 1 AVDD_XOSC 28 2 RESET_N vdd LPF1 24 LPF0 23 3 GPIO3 AVDD_SYNTH1 22 4 GPIO2 DCPL_VCO 21 CC1121 5 DVDD vdd LNA_N 20 6 DCPL LNA_P 19 7 SI TRX_SW 18 8 SCLK N.C. 16 AVDD_RF 15 vdd 13 AVDD_IF vdd 14 RBIAS 12 DVDD vdd CSn 11 10 GPIO0 9 SO (GPIO1) PA 17 vdd vdd DCPL_XOSC 29 (optional control pin from CC1121) XOSC_Q1 30 EXT_XOSC 32 XOSC/ TCXO XOSC_Q2 31 32 MHz crystal MCU connection SPI interface and optional gpio pins Figure 6-1. Typical Application Circuit For more information, see the reference designs available for the CC1121 device in Section 7.2, Documentation Support. 24 Typical Application Circuit Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 CC1121 www.ti.com SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 7 Device and Documentation Support 7.1 Device Support 7.1.1 Development Support 7.1.1.1 Configuration Software The CC1121 device can be configured using the SmartRF Studio software (SWRC046). The SmartRF Studio software is highly recommended for obtaining optimum register settings, and for evaluating performance and functionality. 7.1.2 Device and Development-Support Tool Nomenclature To designate the stages in the product development cycle, TI assigns prefixes to the part numbers of all microprocessors (MPUs) and support tools. Each device has one of three prefixes: X, P, or null (no prefix) (for example, CC1121). Texas Instruments recommends two of three possible prefix designators for its support tools: TMDX and TMDS. These prefixes represent evolutionary stages of product development from engineering prototypes (TMDX) through fully qualified production devices and tools (TMDS). Device development evolutionary flow: X Experimental device that is not necessarily representative of the final device's electrical specifications and may not use production assembly flow. P Prototype device that is not necessarily the final silicon die and may not necessarily meet final electrical specifications. null Production version of the silicon die that is fully qualified. Support tool development evolutionary flow: TMDX Development-support product that has not yet completed Texas Instruments internal qualification testing. TMDS Fully qualified development-support product. X and P devices and TMDX development-support tools are shipped against the following disclaimer: "Developmental product is intended for internal evaluation purposes." Production devices and TMDS development-support tools have been characterized fully, and the quality and reliability of the device have been demonstrated fully. TI's standard warranty applies. Predictions show that prototype devices (X or P) have a greater failure rate than the standard production devices. Texas Instruments recommends that these devices not be used in any production system because their expected end-use failure rate still is undefined. Only qualified production devices are to be used. TI device nomenclature also includes a suffix with the device family name. This suffix indicates the package type (for example, RHB) and the temperature range (for example, blank is the default commercial temperature range) provides a legend for reading the complete device name for any CC1121 device. For orderable part numbers of CC1121 devices in the QFN package types, see the Package Option Addendum of this document, the TI website (www.ti.com), or contact your TI sales representative. Device and Documentation Support Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 25 CC1121 SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 7.2 www.ti.com Documentation Support The following documents supplement the CC1121 processor. Copies of these documents are available on the Internet at www.ti.com. Tip: Enter the literature number in the search box provided at www.ti.com. 7.3 SWRR106 CC112x IPC 868- and 915-MHz 2-layer Reference Design SWRR107 CC112x IPC 868- and 915-MHz 4-layer Reference Design SWRC221 CC1120EM 420- to 470-MHz Reference Design SWRC224 CC1121EM 868- to 915-MHz Reference Design SWRC223 CC1120EM 955-MHz Reference Design SWRC046 SmartRF Studio Software SWRA428 CC112x/CC120x Sniff Mode Application Note Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. TI Embedded Processors Wiki Texas Instruments Embedded Processors Wiki. Established to help developers get started with Embedded Processors from Texas Instruments and to foster innovation and growth of general knowledge about the hardware and software surrounding these devices. 7.4 Trademarks SmartRF, E2E are trademarks of Texas Instruments. 7.5 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 7.6 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 26 Device and Documentation Support Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1121 CC1121 www.ti.com SWRS111F – JUNE 2011 – REVISED OCTOBER 2014 8 Mechanical Packaging and Orderable Information The following pages include mechanical packaging and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Copyright © 2011–2014, Texas Instruments Incorporated Mechanical Packaging and Orderable Information Submit Documentation Feedback Product Folder Links: CC1121 27 PACKAGE OPTION ADDENDUM www.ti.com 30-Jan-2015 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) CC1121RHBR ACTIVE VQFN RHB 32 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 CC1121 CC1121RHBT ACTIVE VQFN RHB 32 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 CC1121 CC1121RHMR OBSOLETE VQFN RHM 32 TBD Call TI Call TI -40 to 85 CC1121 CC1121RHMT OBSOLETE VQFN RHM 32 TBD Call TI Call TI -40 to 85 CC1121 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 30-Jan-2015 continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 29-Sep-2014 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant CC1121RHBR VQFN RHB 32 3000 330.0 12.4 5.3 5.3 1.5 8.0 12.0 Q2 CC1121RHBT VQFN RHB 32 250 180.0 12.4 5.3 5.3 1.5 8.0 12.0 Q2 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 29-Sep-2014 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CC1121RHBR VQFN RHB 32 3000 338.1 338.1 20.6 CC1121RHBT VQFN RHB 32 250 210.0 185.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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