DMP3036SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 BVDSS -30V Features and Benefits RDS(ON) Max ID Max TC = +25°C 20mΩ @ VGS = -10V -30A 29mΩ @ VGS = -5V -30A Low RDS(ON) – ensures on state losses are minimized. Small form factor thermally efficient package enables higher density end products. Occupies just 33% of the board area occupied by SO-8 enabling smaller end product. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Case: PowerDI 3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.03 grams (Approximate) ideal for high efficiency power management applications. Backlighting Power Management Functions DC-DC Converters ® PowerDI3333-8 D Pin 1 S S S G G D D D D Bottom View S Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMP3036SFG-7 DMP3036SFG-13 Notes: Case PowerDI3333-8 PowerDI3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at httphttps://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information PowerDI3333-8 YYWW ADVANCE INFORMATION Product Summary P36 P36 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) PowerDI is a registered trademark of Diodes Incorporated. DMP3036SFG Document number: DS37038 Rev. 5 - 2 1 of 7 www.diodes.com December 2017 © Diodes Incorporated DMP3036SFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +70°C TC = +25°C TC = +70°C TA = +25°C TA = +70°C TC = +25°C TC = +70°C Continuous Drain Current (Note 6) VGS = -10V Continuous Drain Current (Note 7) VGS = -10V Continuous Drain Current (Note 6) VGS = -5V Continuous Drain Current (Note 7) VGS = -5V ID Value -30 ±25 -8.7 -7.0 ID -30 -25 A ID -7.2 -5.8 A ID Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 7) L=0.3mH Avalanche Energy (Note 7) L=0.3mH IDM IS IAS EAS Unit V V A -30 -24 -80 -3.6 -17.5 64 A A A mJ Value 0.9 137 65 2.3 55 26 3.5 -55 to +150 Unit W °C/W °C/W W °C/W °C/W °C/W °C A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Steady State t<10s RJA Steady State t<10s RJA Total Power Dissipation (Note 6) PD Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range RJC TJ, TSTG Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 - - -1.0 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±25V, VDS = 0V VGS(TH) RDS(ON) -2.0 13 18.4 -0.7 -2.5 20 29 -1.2 V Static Drain-Source On-Resistance -1.0 - mΩ VDS = VGS, ID = -250μA VGS = -10V, ID = -8A VGS = -5V, ID = -5A VGS = 0V, IS = -1A - 1931 226 168 10.9 8.8 16.5 2.6 3.6 8.2 14 65 31.6 9.3 12.2 - pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = -5V Total Gate Charge VGS = -10V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR V Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -15V, ID = -10A VGS = -10V, VDD = -15V, RGEN = 3Ω, ID = -10A IF = -8A, di/dt = 500A/µs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP3036SFG Document number: DS37038 Rev. 5 - 2 2 of 7 www.diodes.com December 2017 © Diodes Incorporated DMP3036SFG 30 30.0 VGS = -10V VDS = -5.0V VGS = -3.5V VGS = -5.0V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = -4.5V )A ( T 20.0 N E R R U 15.0 C N IA R 10.0 D ,D I VGS = -4.0V VGS = -3.0V 5.0 15 10 TA = 150C 0 1 2 3 4 -VDS , DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.026 0.024 0.022 0.02 VGS = -5.0V 0.016 0.014 VGS = -10V VGS = -20V 0.008 0.006 0.004 0.002 0 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 5 0.03 0.012 0.01 TA = 25C TA = -55C 0.028 0.018 TA = 85C TA = 125C VGS = -2.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 20 5 VGS = -2.0V 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.04 VGS = -4.5V 0.035 0.03 TA = 150C TA = 125C 0.025 TA = 25 C 0.02 TA = 85C TA = -55C 0.015 0.01 0.005 0 30 1.6 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 30 RDS(on), DRAIN-SOURCE ON-RESISTANCE () 0.03 VGS = -20V ID = -10A RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATION 25.0 VGS = -10V ID = -5A 1.4 VGS = -5V ID = -3A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMP3036SFG Document number: DS37038 Rev. 5 - 2 3 of 7 www.diodes.com VGS = -5V ID = -3A 0.025 0.02 0.015 VGS = -20V ID = -10A VGS = -10V ID = -5A 0.01 0.005 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature December 2017 © Diodes Incorporated DMP3036SFG 30 V 25 2.1 1.9 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) T (S G 2.3 -ID =1mA 1.7 -ID = 250µA 1.5 1.3 1.1 0.9 20 15 TA= 150C 10 TA= 125 C 5 T A= 25C TA= 85C TA= -55C 0.7 0 0.5 -50 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10000 10000 IDSS, LEAKAGE CURRENT (nA) ) 1000 A n ( T N E R R 100 U C E G A 10 K A E L ,S S D 1 I CT, JUNCTION CAPACITANCE (pF) TA = 150°C TA = 125°C T A = 85°C TA = 25°C C iss 1000 Coss Crss 100 0.1 10 0 5 10 15 20 25 30 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Drain-Source Leakage Current vs. Voltage 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 30 100 ID, DRAIN CURRENT (A) R DS(on) Limited VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION 2.5 )V ( E G A T L O V D L O H S E R H T E T A G , )H VDS = -15V ID = -10A 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 TJ(max) = 150癈 150°C TA = 25癈 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board 0 2 4 6 8 10 12 14 16 18 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics DMP3036SFG Document number: DS37038 Rev. 5 - 2 20 4 of 7 www.diodes.com 0.01 0.1 PW = 100µs 100祍 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 December 2017 © Diodes Incorporated DMP3036SFG 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 137癈 /W 137°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 DMP3036SFG Document number: DS37038 Rev. 5 - 2 0.0001 0.001 0.01 0.1 1 t1, (sec) t1,PULSE PULSEDURATION DURATIONTIMES TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 December 2017 © Diodes Incorporated DMP3036SFG Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. ADVANCE INFORMATION PowerDI3333-8 A3 A1 A Seating Plane D L(4x) D2 1 Pin #1 ID E4 b2(4x) E E3 E2 L1(3x) 8 z(4x) b e PowerDI3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.15 0.25 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 E3 0.79 0.89 0.84 E4 1.60 1.70 1.65 e 0.65 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 X3 8 Y2 X2 Y4 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 Y4 0.540 X1 Y1 Y3 Y 1 X DMP3036SFG Document number: DS37038 Rev. 5 - 2 C 6 of 7 www.diodes.com December 2017 © Diodes Incorporated DMP3036SFG ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com DMP3036SFG Document number: DS37038 Rev. 5 - 2 7 of 7 www.diodes.com December 2017 © Diodes Incorporated