DTA143T series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) l Outline Parameter VCEO Value IC -100mA R1 4.7kΩ VMT3 EMT3F -50V DTA143TM (SC-105AA) DTA143TEB (SC-89) EMT3 l Features 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary NPN Types: DTC143T series 6) Complex transistors: EMB3/ UMB3N/ IMB3A/ EMA3/ UMA3N/ FMA3A （PNP type） 7) Lead Free/RoHS Compliant. UMT3F DTA143TE SOT-416(SC-75A) UMT3 DTA143TUB (SC-85) SMT3 DTA143TUA SOT-323(SC-70) DTA143TKA SOT-346(SC-59) l Inner circuit B: BASE C: COLLECTOR E: EMITTER l Application Switching circuit, Inverter circuit, Interface circuit, Driver circuit l Packaging specifications Package Package size Taping code DTA143TM DTA143TEB VMT3 EMT3F 1212 1616 T2L TL 180 180 DTA143TE DTA143TUB DTA143TUA DTA143TKA EMT3 UMT3F UMT3 SMT3 1616 2021 2021 2928 TL TL T106 T146 180 180 180 180 Part No. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/9 Basic ordering unit.(pcs) Marking 8 8 8000 3000 93 93 8 8 8 8 3000 3000 3000 3000 93 93 93 93 Reel size Tape width (mm) (mm) 20130530 - Rev.002 DTA143T series Datasheet l Absolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V IC -100 mA Collector current Power dissipation DTA143TM 150 DTA143TEB 150 DTA143TE 150 PD*1 DTA143TUB DTA143TUA 200 DTA143TKA 200 Junction temperature Range of storage temperature mW 200 Tj 150 ℃ Tstg -55 to +150 ℃ l Electrical characteristics (Ta = 25°C) Parameter Symbol Values Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = -50μA -50 - - V Collector-emitter breakdown voltage BVCEO IC = -1mA -50 - - V Emitter-base breakdown voltage BVEBO IE = -50μA -5 - - V Collector cut-off current ICBO VCB = -50V - - -0.5 μA Emitter cut-off current IEBO VEB = -4V - - -0.5 μA VCE(sat) IC / IB = -5mA / -0.25mA - - -0.3 V DC current gain hFE VCE = -5V, IC = -1mA 100 250 600 - Input resistance R1 3.29 4.7 6.11 kΩ Transition frequency f T*2 - 250 - MHz Collector-emitter saturation voltage VCE = -10V, IE = 5mA, f = 100MHz *1 Each terminal mounted on a reference footprint *2 Characteristics of built-in transistor www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 2/9 20130530 - Rev.002 DTA143T series Datasheet l Electrical characteristic curves(Ta=25℃ ) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC Current gain vs. Collector Current Fig.4 Collector-emitter saturation voltage vs. Collector Current www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 3/9 20130530 - Rev.002 DTA143T series Datasheet l Dimensions www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 4/9 20130530 - Rev.002 DTA143T series Datasheet l Dimensions www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 5/9 20130530 - Rev.002 DTA143T series Datasheet l Dimensions www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 6/9 20130530 - Rev.002 DTA143T series Datasheet l Dimensions www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 7/9 20130530 - Rev.002 DTA143T series Datasheet l Dimensions www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 8/9 20130530 - Rev.002 DTA143T series Datasheet l Dimensions www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 9/9 20130530 - Rev.002