AVD400 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG (A) A 4x .062 x 45° DESCRIPTION: 2xB The ASI AVD400 is Designed for C F E D G FEATURES: I • • • Omnigold™ Metalization System N O -65 C to +250 C TSTG -65 OC to +200 OC θ JC 0.12 OC/W SYMBOL inches / mm inches / mm .135 / 3.43 .145 / 3.68 B .100 / 2.54 .120 / 3.05 C .050 / 1.27 D .376 / 9.55 E .110 / 2.79 .130 / 3.30 F .395 / 10.03 .407 / 10.34 MAXIMUM .396 / 10.06 .193 / 4.90 .510 / 12.95 .490 / 12.45 .100 / 2.54 I O CHARACTERISTICS MINIMUM A H 1000 W @ TC ≤ 80 OC TJ DIM G 55 V PDISS P M 28 A VCC 2xR H J K L MAXIMUM RATINGS IC .040 x 45° J .690 / 17.53 .710 / 18.03 K .890 / 22.61 .910 / 23.11 L .003 / 0.08 .006 / 0.18 M .052 / 1.32 .072 / 1.83 N .118 / 3.00 .131 / 3.33 .230 / 5.84 P ORDER CODE: ASI10567 O TC = 25 C NONETEST CONDITIONS BVCBO IC = 15 mA BVCER IC = 50 mA BVEBO IE = 1.0 mA ICES VCE = 50 V hFE VCE = 5.0 V PG ηC VCC = 50 V MHz RBE = 10 Ω IC = 1.0 A POUT = 400 W MINIMUM TYPICAL MAXIMUM 65 V 65 V 3.5 V 15 f = 1025 - 1150 UNITS 6.5 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 35 mA 120 --dB % REV. A 1/1