ASI AVD400 Npn silicon rf power transistor Datasheet

AVD400
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .400 2L FLG (A)
A
4x .062 x 45°
DESCRIPTION:
2xB
The ASI AVD400 is Designed for
C
F
E
D
G
FEATURES:
I
•
•
• Omnigold™ Metalization System
N
O
-65 C to +250 C
TSTG
-65 OC to +200 OC
θ JC
0.12 OC/W
SYMBOL
inches / mm
inches / mm
.135 / 3.43
.145 / 3.68
B
.100 / 2.54
.120 / 3.05
C
.050 / 1.27
D
.376 / 9.55
E
.110 / 2.79
.130 / 3.30
F
.395 / 10.03
.407 / 10.34
MAXIMUM
.396 / 10.06
.193 / 4.90
.510 / 12.95
.490 / 12.45
.100 / 2.54
I
O
CHARACTERISTICS
MINIMUM
A
H
1000 W @ TC ≤ 80 OC
TJ
DIM
G
55 V
PDISS
P
M
28 A
VCC
2xR
H
J
K
L
MAXIMUM RATINGS
IC
.040 x 45°
J
.690 / 17.53
.710 / 18.03
K
.890 / 22.61
.910 / 23.11
L
.003 / 0.08
.006 / 0.18
M
.052 / 1.32
.072 / 1.83
N
.118 / 3.00
.131 / 3.33
.230 / 5.84
P
ORDER CODE: ASI10567
O
TC = 25 C
NONETEST CONDITIONS
BVCBO
IC = 15 mA
BVCER
IC = 50 mA
BVEBO
IE = 1.0 mA
ICES
VCE = 50 V
hFE
VCE = 5.0 V
PG
ηC
VCC = 50 V
MHz
RBE = 10 Ω
IC = 1.0 A
POUT = 400 W
MINIMUM TYPICAL MAXIMUM
65
V
65
V
3.5
V
15
f = 1025 - 1150
UNITS
6.5
40
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
35
mA
120
--dB
%
REV. A
1/1
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