Panasonic Battery DB2430100L Embossed type (thermo-compression sealing) : 3 000 pcs / reel (standard) Datasheet

Doc No. TT4-EA-14186
Revision. 2
Product Standards
Schottky Barrier Diode
DB2430100L
DB2430100L
Silicon epitaxial planar type
Unit: mm
2.4
For rectification
0.15
2
 Features
3.8
4.7
 Low forward voltage VF
 Forward current (Average) IF(AV) = 2 A rectification is possible
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1
 Marking Symbol: 32
1.75
0.85
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Reverse voltage
Maximum peak reverse voltage
Forward current *1
Non-repetitive peak forward surge current
Junction temperature *1
Operating ambient temperature
Storage temperature
Note:
*2
VR
VRM
IF
IFSM
Tj
Topr
Tstg
1. Cathode
2. Anode
Panasonic
JEITA
Code
Rating
Unit
30
30
2.0
30
150
-40 to +85
-55 to +150
V
V
A
A
°C
°C
°C
*1 Tl = 80 °C
*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)
TMiniP2-F2-B
SC-110A
―
Internal Connection
2
1
Page 1 of 4
Established : 2012-06-13
Revised
: 2013-04-19
Doc No. TT4-EA-14186
Revision. 2
Product Standards
Schottky Barrier Diode
DB2430100L
 Electrical Characteristics Ta = 25 C  3 C
Parameter
Symbol
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time * 1
VF
IR
Ct
trr
Conditions
Min
IF = 2.0 A
VR = 30 V
VR = 10 V, f = 1 MHz
IF = IR = 100 mA, Irr = 10 mA
Typ
Max
Unit
0.39
1300
V
μA
pF
ns
61
21
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3. *1 trr test circuit
Input Pulse
Bias Application Unit (N-50BU)
tp
tr
10%
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
VR
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Output Pulse
t
IF
trr
90%
tp = 2 μs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
t
Irr = 10 mA
Page 2 of 4
Established : 2012-06-13
Revised
: 2013-04-19
Doc No. TT4-EA-14186
Revision. 2
Product Standards
Schottky Barrier Diode
DB2430100L
Technical Data ( reference )
IR - VR
IF - VF
1.E-01
1.E+00
Ta = 125 °C
Reverse current IR (A)
Forward current IF (A)
1.E+01
1.E-01
85 °C
1.E-02
25 °C
1.E-03
1.E-04
-40 °C
1.E-05
0.0
Ta = 85 °C
1.E-02
25 °C
1.E-03
1.E-04
1.E-05
-40 °C
1.E-06
1.E-07
1.E-08
0.1
0.2
0.3
0.4
0.5
0.6
0
5
Forward voltage VF (V)
10
25
30
1000
(1)
Ta = 25 °C
f = 1 MHz
250
Thermal resistance Rth (°C/W)
Terminal capacitance Ct (pF)
20
Rth - t
Ct - VR
300
200
150
100
50
(2)
100
0
5
10
15
20
Reverse voltage VR (V)
25
(3)
Rth(j-l) = 9 °C/W
10
0
(1) Non-heat sink
(2) Mounted on glass epoxy print board.
(3) Mounted on alumina print board.
Board size : 50 mm × 50 mm x 0.8 mm
Solder in : 2 mm x 2 mm
1
0.001
30
0.01
IF(AV) - Tl
0.1
1
10
Time t (s)
100
1000
PF(AV) - IF(AV)
1
IF
tp/T
2
VR = 15 V
Tj = 125 °C
1/2
1
tp
T
DC
1.5
Forward power dissipation (Average) PF(AV) (W)
2.5
Forward current (Average) IF(AV) (A)
15
Reverse voltage VR (V)
1/4
Sine Wave
0.5
IF
0.8
tp
DC
T
0.6
Sine Wave
1/2
1/4
0.4
0.2
0
0
0
25
50
75
100
125
Lead temperature Tl (°C)
150
175
0
0.5
1
1.5
2
2.5
Forward current (Average) IF(AV) (A)
Page 3 of 4
Established : 2012-06-13
Revised
: 2013-04-19
Doc No. TT4-EA-14186
Revision. 2
Product Standards
Schottky Barrier Diode
DB2430100L
TMiniP2-F2-B
Unit: mm
2.4±0.1
0.15±0.05
(5°)
4.7±0.1
3.8±0.1
2
0.45±0.10
1
0 to 0.03
(5°)
0 to 0.4
0.85±0.05
1.75±0.10
 Land Pattern (Reference) (Unit: mm)
1.4
4.4
1.4
2.1
Page 4 of 4
Established : 2012-06-13
Revised
: 2013-04-19
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