F10P20FR thru F10P60FR Pb Free Plating Product ® Pb F10P20FR thru F10P60FR 10 Ampere Dual Common Anode Ultra Fast Recovery Half Bridge Rectifiers ITO-220AB Features Latest GPP technology with super fast recovery time Low forward voltage drop High current capability Low reverse leakage current High surge current capability Unit:mm Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,EPS and UPS Car Audio Amplifiers and Sound Device Systems Mechanical Data Case: Fully Insulated Molding TO-220F Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.0 gram approximately Case Case Negative Positive Common Cathode Common Anode Suffix "F" Suffix "FR" Case Case Series Connection Doubler Tandem Polarity Tandem Polarity Suffix "FD" Suffix "FS" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. o SYMBOL F10P20FR F10P40FR F10P60FR UNIT Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V Maximum RMS Voltage VRMS 140 280 420 V VDC 200 400 600 V Maximum DC Blocking Voltage Maximum Average Forward Rectified o Current TC=100 C IF(AV) 10.0 A IFSM 100 A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 5.0 A VF 0.98 o Maximum DC Reverse Current @TJ=25 C o At Rated DC Blocking Voltage @TJ=125 C IR 1.3 uA 100 uA nS Trr 35 Typical junction Capacitance (Note 2) CJ 65 Operating Junction and Storage Temperature Range V 5.0 Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance (Note 3) 1.7 R JC 2.2 TJ, TSTG -55 to +150 pF o C/W o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com/ F10P20FR thru F10P60FR ® FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 100 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 10 8 6 4 2 60 Hz Resistive or Inductive load 0 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 80 60 40 20 0 0 50 100 150 1 CASE TEMPERATURE, C 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1000 50 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 NUMBER OF CYCLES AT 60Hz o F10P20FR F10P40FR 5 F10P60FR 1 o TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o TJ=125 C 100 10 o TJ=25 C 1 0.1 0 1.6 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 o TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 2/2 http://www.thinkisemi.com/