PHILIPS BFG35 Npn 4 ghz wideband transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG35
NPN 4 GHz wideband transistor
Product specification
Supersedes data of 1995 Sep 12
1999 Aug 24
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
DESCRIPTION
BFG35
PINNING
NPN planar epitaxial transistor
mounted in a plastic SOT223
envelope, intended for wideband
amplifier applications. It features high
output voltage capabilities.
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
4
page
1
2
Top view
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
−
−
18
V
−
−
150
mA
−
1
W
70
−
VCEO
collector-emitter voltage
IC
DC collector current
Ptot
total power dissipation
up to Ts = 135 °C (note 1)
−
hFE
DC current gain
IC = 100 mA; VCE = 10 V; Tj = 25 °C
25
fT
transition frequency
IC = 100 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
−
4
−
GHz
GUM
maximum unilateral power gain IC = 100 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
−
15
−
dB
IC = 100 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 °C
−
11
−
dB
IC = 100 mA; VCE = 10 V;
dim = −60 dB; RL = 75 Ω;
f(p+q−r) = 793.25 MHz; Tamb = 25 °C
−
750
−
mV
Vo
output voltage
open base
MIN.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
open emitter
−
25
V
collector-emitter voltage
open base
−
18
V
emitter-base voltage
open collector
−
2
V
−
150
mA
−
1
W
−65
+150
°C
175
°C
VCBO
collector-base voltage
VCEO
VEBO
IC
DC collector current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
−
up to Ts = 135 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
1999 Aug 24
2
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to soldering point
up to Ts = 135 °C (note 1)
40
K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 10 V
−
−
1
hFE
DC current gain
IC = 100 mA; VCE = 10 V
25
70
−
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
2
−
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
10
−
pF
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz
−
1.2
−
pF
fT
transition frequency
IC = 100 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
−
4
−
GHz
GUM
maximum unilateral power gain
(note 1)
IC = 100 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
−
15
−
dB
IC = 100 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 °C
−
11
−
dB
note 2
−
750
−
mV
note 3
−
800
−
mV
note 4
−
−55
−
dB
note 5
−
−57
−
dB
Vo
output voltage
d2
second order intermodulation
distortion
Notes
µA
pF
s 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 )
2. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C
Vp = Vo at dim = −60 dB; fp = 795.25 MHz;
Vq = Vo −6 dB; fq = 803.25 MHz;
Vr = Vo −6 dB; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.
3. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C
Vp = Vo at dim = −60 dB; fp = 445.25 MHz;
Vq = Vo −6 dB; fq = 453.25 MHz;
Vr = Vo −6 dB; fr = 455.25 MHz;
measured at f(p+q−r) = 443.25 MHz.
4. IC = 60 mA; VCE = 10 V; RL = 75 Ω;
Vp = Vq = Vo = 50 dBmV;
f(p+q) = 450 MHz; fp = 50 MHz; fq = 400 MHz.
5. IC = 60 mA; VCE = 10 V; RL = 75 Ω;
Vp = Vq = VO = 50 dBmV;
f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz.
1999 Aug 24
3
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
,,
,
VCC
handbook, full pagewidth
C4
L6
C5
L5
VBB
C3
R1
input
75 Ω
C1
C6
L3
output
75 Ω
R2
L1
L2
L4
DUT
C7
C2
R3
R4
MBB284
Fig.2 Intermodulation and second harmonic test circuit.
List of components (see test circuit)
DESIGNATION
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C3, C5, C6
multilayer ceramic capacitor
10 nF
2222 590 08627
C2, C7
multilayer ceramic capacitor
1 pF
2222 851 12108
C4 (note 1)
miniature ceramic plate capacitor
10 nF
2222 629 08103
L1
microstrip line
75 Ω
length 7mm;
width 2.5 mm
L2
microstrip line
75 Ω
length 22mm;
width 2.5 mm
L3 (note 1)
1.5 turns 0.4 mm copper wire
L4
microstripline
75 Ω
L5
Ferroxcube choke
5 µH
L6 (note 1)
0.4 mm copper wire
≈25 nH
R1
metal film resistor
10 kΩ
2322 180 73103
R2 (note 1)
metal film resistor
200 Ω
2322 180 73201
R3, R4
metal film resistor
27 Ω
2322 180 73279
int. dia. 3 mm;
winding pitch 1 mm
length 19 mm;
width 2.5 mm
3122 108 20153
length 30 mm
Note
1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (εr = 2.2);
thickness 1⁄16 inch; thickness of copper sheet 1⁄32 inch.
1999 Aug 24
4
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
handbook, full pagewidth
VBB
VCC
C3
C5
R1
75 Ω
input
L5
R3
C1
L3
L1
L2
C2
C6
75 Ω
output
L4
C7
R2
R4
L6
C4
MBB299
handbook, full pagewidth
80 mm
60 mm
MBB298
handbook, full pagewidth
MBB297
Fig.3 Intermodulation test circuit printed circuit board.
1999 Aug 24
5
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
MBB336
MBB361
1.2
120
handbook, halfpage
handbook,
halfpage
P
tot
(W)
h FE
1.0
0.8
80
0.6
0.4
40
0.2
0
0
0
50
100
150
200
( o C)
Ts
0
40
80
120
160
I C (mA)
VCE = 10 V; Tj = 25 °C.
Fig.5
DC current gain as a function of collector
current.
Fig.4 Power derating curve.
MBB381
MBB357
8
3
handbook, halfpage
handbook, halfpage
fT
(GHz)
C re
(pF)
6
2
4
1
2
0
0
0
4
8
12
0
16
20
VCE (V)
40
80
160
I C (mA)
IE = 0; f = 1 MHz; Tj = 25 °C.
VCE = 10 V; f = 500 MHz; Tj = 25 °C
Fig.6
Fig.7
Feedback capacitance as a function of
collector-emitter voltage.
1999 Aug 24
120
6
Transition frequency as a function of
collector current.
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
MBB386
MBB385
40
45
handbook, halfpage
handbook, halfpage
d im
(dB)
G UM
(dB)
50
30
55
20
60
10
65
0
102
10
103
f (MHz)
70
20
104
40
60
80
100
120
I C (mA)
IC = 100 mA; VCE = 10 V; Tamb = 25 °C.
VCE = 10 V; Vo = 800 mV; f(p+q−r) = 443.25 MHz; Tamb = 25 °C.
Fig.8
Fig.9
Maximum unilateral power gain as a
function of frequency.
Intermodulation distortion as a function of
collector current.
MBB383
MBB382
45
45
handbook, halfpage
handbook, halfpage
d im
(dB)
d2
(dB)
50
50
55
55
60
60
65
65
70
20
40
60
80
70
20
100
120
I C (mA)
40
60
80
100
120
I C (mA)
VCE = 10 V; Vo = 750 mV; f(p+q−r) = 793.25 MHz; Tamb = 25 °C.
VCE = 10 V; Vo = 50 dBmV; f(p+q) = 450 MHz; Tamb = 25 °C.
Fig.10 Intermodulation distortion as a function of
collector current.
Fig.11 Second order intermodulation distortion as
a function of collector current.
1999 Aug 24
7
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
MBB384
45
handbook, halfpage
d2
(dB)
50
55
60
65
70
20
40
60
80
100
120
I C (mA)
VCE = 10 V; Vo = 50 dBmV; f(p+q) = 810 MHz; Tamb = 25 °C.
Fig.12 Second order intermodulation distortion as
a function of collector current.
1999 Aug 24
8
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
50
handbook, full pagewidth
25
100
0
10
250
+j
10
0
25
50
100
250
–j
250
10
3 GHz
100
25
MBB380
50
IC = 100 mA; VCE = 10 V; Tamb = 25 °C; Zo = 50 Ω.
Fig.13 Common emitter input reflection coefficient (S11).
90 o
handbook, full pagewidth
60 o
120 o
150 o
180 o
50
30 o
40
30
20
10
0o
30 o
150 o
60 o
120 o
90 o
MBB286
IC = 100 mA; VCE = 10 V; Tamb = 25 °C.
Fig.14 Common emitter forward transmission coefficient (S21).
1999 Aug 24
9
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
90 o
handbook, full pagewidth
60 o
120 o
150 o
30 o
0.1 0.2
180 o
0.3 0.4
0.5
0.6
0o
30 o
150 o
60 o
120 o
90 o
MBB285
IC = 100 mA; VCE = 10 V; Tamb = 25 °C.
Fig.15 Common emitter reverse transmission coefficient (S12).
50
handbook, full pagewidth
25
100
10
250
0
+j
0
10
25
50
100
250
–j
250
10
3 GHz
100
25
50
MBB379
IC = 100 mA; VCE = 10 V; Tamb = 25 °C; Zo = 50 Ω.
Fig.16 Common emitter output reflection coefficient (S22).
1999 Aug 24
10
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
PACKAGE OUTLINE
0.95
0.85
handbook, full pagewidth
S
0.1 S
seating plane
0.32
0.24
6.7
6.3
3.1
2.9
B
4
A
0.10
0.01
16 o
max
16
3.7
3.3
10 o
max
2
0.80
0.60
2.3
4.6
Dimensions in mm.
Fig.17 SOT223.
1999 Aug 24
7.3
6.7
o
1
1.80
max
0.2 M A
11
3
0.1 M B
(4x)
MSA035 - 1
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Aug 24
12
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
NOTES
1999 Aug 24
13
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
NOTES
1999 Aug 24
14
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
NOTES
1999 Aug 24
15
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SCA 67
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Printed in The Netherlands
125006/03/pp16
Date of release: 1999
Aug 24
Document order number:
9397 750 06337