Zetex BFN38 Sot223 npn silicon planar high voltage transistor Datasheet

SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
BFN38
ISSUE 4 - JANUARY 1996
✪
FEATURES:
* High VCEO and Low saturation voltage
APPLICATIONS:
* Suitable for video output stages in TV sets
* Switching power supplies
C
E
C
COMPLEMENTARY TYPE - BFN39
PARTMARKING DETAILS - BFN38
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
500
mA
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
300
V
IC=100µ A
Collector-Emitter
Breakdown Voltage
V(BR)CEO
300
V
IC=1mA
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=100µ A
Collector Cut-Off
Current
ICBO
100
20
µA
nA
VCB=250V
VCB=250V, Tamb=150°C
Emitter Cut-Off
Current
IEBO
100
nA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.5
V
IC=20mA, IB=2mA
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=20mA, IB=2mA
Static Forward Current hFE
Transfer Ratio
IC=1mA, VCE=10V*
IC=10mA, VCE=10V*
IC=30mA, VCE=10V*
25
40
30
Transition
Frequency
fT
70
MHz
IC=20mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
1.5
pF
VCB=30V,f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMTA42 datasheet.
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