AP2304GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small package outline ▼ Surface mount package BVDSS 25V RDS(ON) 117mΩ ID 2.7A S ▼ RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness. The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage +20 V 3 ID@TA=25℃ Drain Current , VGS @ 10V 2.7 A ID@TA=70℃ Drain Current3, VGS @ 10V 2.2 A 10 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 90 ℃/W 1 201501056 AP2304GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 25 - - V VGS=10V, ID=2.5A - - 117 mΩ VGS=4.5V, ID=2A - - 190 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=4.5V, ID=2.5A - 3.4 - S IDSS Drain-Source Leakage Current VDS=25V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=55 C) VDS=20V ,VGS=0V - - 10 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=2.5A - 5.9 10 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=15V - 0.8 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 2.1 - nC VDS=15V - 4.5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 11.5 - ns td(off) Turn-off Delay Time RG=6Ω - 12 - ns tf Fall Time VGS=10V - 3 - ns Ciss Input Capacitance VGS=0V - 110 - pF Coss Output Capacitance VDS=15V - 85 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 39 - pF Min. Typ. - - 1 A - - 10 A - - 1.2 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=1.2V Continuous Source Current ( Body Diode ) Pulsed Source Current ( Body Diode ) 1 2 Forward On Voltage IS=1.25A, VGS=0V Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 270℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2304GN-HF 10 10 T A =150 o C T A =25 o C V GS =10V - 5V V GS =10V - 5V 8 ID , Drain Current (A) ID , Drain Current (A) 8 6 V GS =4V 4 2 6 V GS =4V 4 2 V GS =3V V GS =3V 0 0 0 2 4 6 8 10 0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 4 6 8 10 Fig 2. Typical Output Characteristics 700 1.8 I D =2A T A =25 ℃ V GS =10V I D =2.5A 1.6 Normalized RDS(ON) 600 RDS(ON) (mΩ ) 2 V DS , Drain-to-Source Voltage (V) 500 400 300 1.4 1.2 1.0 200 0.8 100 0 0.6 0 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.25 10 VGS(th) (V) IF (A) 2.05 1 o o T j =150 C T j =25 C 1.85 1.65 0 1.45 0.1 0.5 0.9 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.3 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2304GN-HF f=1.0MHz 1000 V DS =15V I D =2.5A 8 6 C (pF) VGS , Gate to Source Voltage (V) 10 C iss 100 4 C oss C rss 2 0 10 0 1 2 3 4 5 6 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (Rthja) Duty factor=0.5 ID (A) 10 1ms 1 10ms 100ms 0 o T A =25 C Single Pulse 1s DC 0 0.2 0.1 0.1 0.05 PDM t 0.01 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse Rthja = 270℃/W 0.001 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP2304GN-HF MARKING INFORMATION Part Number : N4 N4SS Date Code : SS SS:2004,2008,2012,2016,2020... SS:2003,2007,2011,2015,2019... SS:2002,2006,2010,2014,2018... SS:2001,2005,2009,2013,2017... 5