ESMT
F59D1G81A / F59D1G161A
Flash
1 Gbit (128M x 8/ 64M x 16)
1.8V NAND Flash Memory
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V)
Organization
x8:
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit
x16:
- Memory Cell Array: (64M + 2M) x 16bit
- Data Register: (1K + 32) x 16bit
Automatic Program and Erase
x8:
- Page Program: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte
x16:
- Page Program: (1K + 32) Word
- Block Erase: (64K + 2K) Word
Page Read Operation
- Page Size: (2K + 64) Byte (x8)
Page Size: (1K + 32) Word (x16)
- Random Read: 25us (Max.)
- Serial Access: 45ns (Min.)
Memory Cell: 1bit/Memory Cell
Fast Write Cycle Time
- Program time: 250us (Typ.)
- Block Erase time: 2ms (Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating Gate Technology
- ECC Requirement: x8 - 1bit/528Byte,
x16 - 1bit/264Word
- Endurance: 100K Program/Erase Cycles
- Data Retention: 10 Years
Command Register Operation
Automatic Page 0 Read at Power-Up Option
- Boot from NAND support
- Automatic Memory Download
NOP: 4 cycles
Cache Program Operation for High Performance Operation
Copy-Back Operation
EDO mode
OTP Operation
No Bad-Block-Erasing-Protect function (user should manage
bad blocks before erasing)
ORDERING INFORMATION
Product ID
Speed
Package
Comments
F59D1G81A -45TG
45 ns
48 pin TSOPI
Pb-free
F59D1G81A -45BG
45 ns
63 ball BGA
Pb-free
45 ns
63 ball BGA
Pb-free
x8:
x16:
F59D1G161A -45BG
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.5
1/43
ESMT
F59D1G81A / F59D1G161A
GENERAL DESCRIPTION
The device is a 128Mx8bit with spare 4Mx8bit capacity (or
64Mx16bit with spare 2Mx16bit capacity). The device is offered
in 1.8V VCC Power Supply. Its NAND cell provides the most
cost-effective solution for the solid state mass storage market.
The memory is divided into blocks that can be erased
independently so it is possible to preserve valid data while old
data is erased.
The device contains 1024 blocks, composed by 64 pages
consisting in two NAND structures of 32 series connected Flash
cells. A program operation allows to write the 1056-Word page in
typical 250us and an erase operation can be performed in typical
2ms on a 128K-Byte for x8 device block (or 64K-Word for x16
device block).
Elite Semiconductor Memory Technology Inc.
Data in the page mode can be read out at 45ns cycle time per
Byte. The I/O pins serve as the ports for address and command
inputs as well as data input/output. The copy back function
allows the optimization of defective blocks management: when a
page program operation fails the data can be directly
programmed in another page inside the same array section
without the time consuming serial data insertion phase. The
cache program feature allows the data insertion in the cache
register while the data register is copied into the Flash array.
This pipelined program operation improves the program
throughput when long files are written inside the memory. A
cache read feature is also implemented. This feature allows to
dramatically improving the read throughput when consecutive
pages have to be streamed out. This device includes extra
feature: Automatic Read at Power Up.
Publication Date: May 2014
Revision: 1.5
2/43
ESMT
F59D1G81A / F59D1G161A
PIN CONFIGURATION (x8) (TOP VIEW)
(TSOPI 48L, 12mm X 20mm Body, 0.5mm Pin Pitch)
NC
NC
NC
NC
NC
NC
R/B
RE
CE
NC
NC
VCC
VSS
NC
NC
CLE
ALE
WE
WP
NC
NC
NC
NC
NC
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
NC
NC
NC
NC
I/O7
I/O6
I/O5
I/O4
NC
NC
NC
VCC
VSS
NC
NC
NC
I/O3
I/O2
I/O1
I/O0
NC
NC
NC
NC
BALL CONFIGURATION (x8) (TOP VIEW)
(BGA 63 BALL, 9mm X 11mm Body, 0.8 Ball Pitch)
1
2
A
NC
NC
B
NC
3
4
5
6
7
8
C
WP
ALE
VSS
CE
WE
R/B
D
NC
RE
CLE
NC
NC
NC
E
NC
NC
NC
NC
NC
NC
F
NC
NC
NC
NC
NC
NC
G
NC
NC
NC
NC
NC
NC
H
NC
I/O0
NC
NC
NC
VCC
J
NC
I/O1
NC
VCC
I/O5
I/O7
K
VSS
I/O2
I/O3
I/O4
I/O6
VSS
9
10
NC
NC
NC
NC
L
NC
NC
NC
NC
M
NC
NC
NC
NC
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.5
3/43
ESMT
F59D1G81A / F59D1G161A
BALL CONFIGURATION (x16) (TOP VIEW)
(BGA 63 BALL, 9mm X 11mm Body, 0.8 Ball Pitch)
1
2
A
NC
NC
B
NC
3
4
5
6
7
8
C
WP
ALE
VSS
CE
WE
R/B
D
NC
RE
CLE
NC
NC
NC
E
NC
NC
NC
NC
NC
NC
F
NC
NC
NC
NC
NC
NC
G
NC
NC
NC
I/O13
I/O15
NC
H
I/O8
I/O0
I/O10
I/O12
I/O14
VCC
J
I/O9
I/O1
I/O11
VCC
I/O5
I/O7
K
VSS
I/O2
I/O3
I/O4
I/O6
VSS
9
10
NC
NC
NC
NC
L
NC
NC
NC
NC
M
NC
NC
NC
NC
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.5
4/43
ESMT
F59D1G81A / F59D1G161A
Pin Description
Symbol
I/O0~I/O7 (x8)
I/O0~I/O15 (x16)
CLE
ALE
Pin Name
Data Inputs / Outputs
Command Latch
Enable
Address Latch Enable
Functions
The I/O pins are used to input command, address and data, and to output data
during read operations. The I/O pins float to Hi-Z when the chip is deselected
or when the outputs are disabled.
The CLE input controls the activating path for commands sent to the command
register. When active high, commands are latched into the command register
through the I/O ports on the rising edge of the WE signal.
The ALE input controls the activating path for address to the internal address
registers. Addresses are latched on the rising edge of WE with ALE high.
The CE input is the device selection control. When the device is in the Busy
CE
Chip Enable
RE
Read Enable
WE
Write Enable
WP
Write Protect
state, CE high is ignored, and the device does not return to standby mode in
program or erase operation. Regarding CE control during read operation,
refer to ’Page read’ section of Device operation.
The RE input is the serial data-out control, and when active drives the data
onto the I/O bus. Data is valid tREA after the falling edge of RE which also
increments the internal column address counter by one.
The WE input controls writes to the I/O port. Commands, address and data
are latched on the rising edge of the WE pulse.
The WP pin provides inadvertent program/erase protection during power
transitions. The internal high voltage generator is reset when the WP pin is
active low.
Ready / Busy Output
The R/ B output indicates the status of the device operation. When low, it
indicates that a program, erase or random read operation is in process and
returns to high state upon completion. It is an open drain output and does not
float to Hi-Z condition when the chip is deselected or when outputs are
disabled.
VCC
Power
VCC is the power supply for device.
VSS
Ground
NC
No Connection
R /B
Lead is not internally connected.
Note: Connect all VCC and VSS pins of each device to common power supply outputs. Do not leave VCC or VSS disconnected.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.5
5/43
ESMT
F59D1G81A / F59D1G161A
BLOCK DIAGRAM (x8)
ARRAY ORGANIZATION (x8)
Address Cycle Map (x8)
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
1st cycle
A0
A1
A2
A3
A4
A5
A6
A7
Column Address
2nd cycle
A8
A9
A10
A11
L*
L*
L*
L*
Column Address
3rd cycle
4th cycle
A12
A20
A13
A21
A14
A22
A15
A23
A16
A24
A17
A25
A18
A26
A19
A27
Row Address
Row Address
Note:
Column Address: Starting Address of the Register.
*L must be set to “Low”.
* The device ignores any additional input of address cycles than required.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.5
6/43
ESMT
F59D1G81A / F59D1G161A
BLOCK DIAGRAM (x16)
ARRAY ORGANIZATION (x16)
Address Cycle Map (x16)
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8~I/O15
1st cycle
A0
A1
A2
A3
A4
A5
A6
A7
L*
Column Address
2nd cycle
A8
A9
A10
L*
L*
L*
L*
L*
L*
Column Address
3rd cycle
4th cycle
A11
A19
A12
A20
A13
A21
A14
A22
A15
A23
A16
A24
A17
A25
A18
A26
L*
L*
Row Address
Row Address
Note:
Column Address: Starting Address of the Register.
*L must be set to “Low”.
* The device ignores any additional input of address cycles than required.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.5
7/43
ESMT
F59D1G81A / F59D1G161A
Product Introduction
The device is a 1,056Mbit memory organized as 64K rows (pages) by 2,112x8 columns. Spare 64x8 columns are located from column
address of 2,048~2,111. A 2,112-byte data register is connected to memory cell arrays accommodating data transfer between the I/O
buffers and memory during page read and page program operations. The program and read operations are executed on a page basis,
while the erase operation is executed on a block basis. The memory array consists of 1,024 separately erasable 128K-byte blocks. It
indicates that the bit-by-bit erase operation is prohibited on the device.
The device has addresses multiplexed into 8 I/Os or 16I/Os. This scheme dramatically reduces pin counts and allows system upgrades
to future densities by maintaining consistency in system board design. Command, address and data are all written through I/O's by
bringing WE to low while CE is low. Those are latched on the rising edge of WE . Command Latch Enable (CLE) and Address
Latch Enable (ALE) are used to multiplex command and address respectively, via the I/O pins. Some commands require one bus cycle.
For example, Reset Command, Status Read Command, etc require just one cycle bus. Some other commands, like page read and
block erase and page program, require two cycles: one cycle for setup and the other cycle for execution.
In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another
page without need for transporting the data to and from the external buffer memory.
Command Set
Function
1st Cycle
2nd Cycle
00h
00h
90h
FFh
80h
85h
60h
85h
05h
70h
80h
31h
3Fh
30h
35h
10h
10h
D0h
E0h
15h
-
Read
Read for Copy Back
Read ID
Reset
Page Program
Copy-Back Program
Block Erase
Random Data Input(1)
Random Data Output(1)
Read Status
Cache Program
Cache Read
Read Start for Last Page Cache Read
Acceptable Command
during Busy
O
O
Note:
1. Random Data Input / Output can be executed in a page.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.5
8/43
ESMT
F59D1G81A / F59D1G161A
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Temperature Under Bias
VCC
VIN
VI/O
TBIAS
-0.6 to +2.45
-0.6 to +2.45
-0.6 to VCC + 0.3 (< 2.45)
-40 to +125
℃
Storage Temperature
TSTG
-65 to +150
℃
Short Circuit Current
IOS
5
mA
Voltage on any pin relative to VSS
V
Note:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, TA = 0 to 70℃)
Parameter
Symbol
Min.
Typ.
Max.
Unit
VCC
VSS
1.7
0
1.8
0
1.95
0
V
V
Supply Voltage
Supply Voltage
DC AND OPERATION CHARACTERISTICS
(Recommended operating conditions otherwise noted)
Parameter
Page Read with
Serial Access
Operating
Program
Current
Erase
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
ICC1
tRC=45ns, CE =VIL, IOUT=0mA
-
15
ICC2
ICC3
-
-
15
15
30
mA
Stand-by Current (TTL)
ISB1
CE =VIH, WP =0V/VCC
-
-
1
mA
Stand-by Current (CMOS)
ISB2
CE = VCC -0.2, WP =0V/ VCC
-
10
50
uA
Input Leakage Current
ILI
VIN=0 to VCC (max)
-
-
±10
uA
Output Leakage Current
ILO
VOUT=0 to VCC (max)
uA
VIH(1)
(1)
VIL
VOH
VOL
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current (R/B)
IOL (R / B )
IOH=-100uA
IOL=+100uA
VOL=0.1V
-
-
±10
0.8 x VCC
-0.3
VCC - 0.1
-
-
VCC +0.3
0.2 x VCC
0.1
V
V
V
V
3
4
-
mA
Note:
1. VIL can undershoot to -0.4V and VIH can overshoot to VCC+0.4V for durations of 20ns or less.
2. Typical value are measured at VCC =1.8V, TA=25℃. And not 100% tested.
VALID BLOCK
Symbol
Min.
Typ.
Max.
Unit
NVB
1,004
-
1,024
Blocks
Note:
1. The device may include initial invalid blocks when first shipped. The number of valid blocks is presented as first shipped. Do not
erase or program factory-marked bad blocks. Refer to the attached technical notes for appropriate management of initial invalid
blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block at the time of shipment and is guaranteed to
be a valid block up to 1K program/erase cycles with 1bit/528Byte (or 1 bit/264Word) ECC.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.5
9/43
ESMT
F59D1G81A / F59D1G161A
AC TEST CONDITION
(TA=0 to 70℃, VCC=1.7V~1.95V)
Parameter
Condition
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
0V to VCC
5 ns
VCC /2
1 TTL Gate and CL=30pF
Note: * Refer to Ready / Busy section, R/B output’s Busy to Ready time is decided by the pull-up resistor (RP) tied to R/ B pin.
CAPACITANCE
(TA=25℃, VCC=1.8V, f=1.0MHz)
Item
Symbol
Test Condition
Min.
Max.
Unit
CI/O
CIN
VIL = 0V
VIN = 0V
-
10
10
pF
pF
Input / Output Capacitance
Input Capacitance
Note: Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
ALE
CE
H
L
L
WE
Mode
RE
WP
L
H
X
H
L
H
X
H
L
L
H
H
L
H
L
H
H
L
L
L
H
H
Data Input
L
L
L
H
X
Data Output
X
X
X
X
X
X
X
X
X(1)
X
X
X
X
X
H
X
X
X
X
X
H
X
X
X
X
X
H
H
L
0V/VCC(2)
Read Mode
Write Mode
Command Input
Address Input (4 clock)
Command Input
Address Input (4 clock)
During Read (Busy)
During Program (Busy)
During Erase (Busy)
Write Protect
Stand-by
Note:
1. X can be VIL or VIH.
2.
WP should be biased to CMOS high or CMOS low for stand-by.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.5
10/43
ESMT
F59D1G81A / F59D1G161A
Program / Erase Characteristics
(TA=0 to 70℃, VCC=1.7V~1.95V)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Program Time
Dummy Busy Time for Cache Program
Number of Partial Program Cycles in the
Same Page
Block Erase Time
tPROG
tCBSY
-
250
3
700
700
us
us
NOP
-
-
4
Cycle
tBERS
-
2
10
ms
Note:
1. Typical program time is defined as the time within which more than 50% of the whole pages are programmed at 1.8V VCC and 25℃
temperature.
2. tPROG is the average program time of all pages. Users should be noted that the program time variation from page to page is
possible.
3. tCBSY max. time depends on timing between internal program completion and data in.
AC Timing Characteristics for Command / Address / Data Input
Symbol
Min.
Max.
Unit
CLE Setup Time
CLE Hold Time
Parameter
tCLS(1)
tCLH
25
10
-
ns
ns
CE Setup Time
tCS(1)
35
-
ns
CE Hold Time
tCH
10
-
ns
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
tWP
25
-
ns
tALS
tALH
tDS(1)
tDH
tWC
25
10
20
10
45
-
ns
ns
ns
ns
ns
tWH
15
-
ns
100
-
ns
WE High Hold Time
ALE to Data Loading Time
(1)
tADL
(2)
Note:
1.
The transition of the corresponding control pins must occur only once while WE is held low.
2.
tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.5
11/43
ESMT
F59D1G81A / F59D1G161A
AC Characteristics for Operation
Symbol
Min.
Max.
Unit
Data Transfer from Cell to Register
Parameter
tR
-
25
us
ALE to RE Delay
tAR
10
-
ns
CLE to RE Delay
tCLR
10
-
ns
Ready to RE Low
tRR
20
-
ns
RE Pulse Width
tRP
25
-
ns
WE High to Busy
tWB
-
100
ns
WP Low to WE Low (disable mode)
tWW
100
-
ns
WP High to WE Low (enable mode)
Read Cycle Time
tRC
45
-
ns
RE Access Time
tREA
-
30
ns
CE Access Time
tCEA
-
45
ns
RE High to Output Hi-Z
tRHZ
-
100
ns
CE High to Output Hi-Z
tCHZ
-
30
ns
CE High to ALE or CLE Don’t care
tCSD
0
-
ns
RE High to Output Hold
tRHOH
15
-
ns
RE Low to Output Hold
tRLOH
5
-
ns
CE High to Output Hold
tCOH
15
-
ns
RE High Hold Time
tREH
15
-
ns
Output Hi-Z to RE Low
tIR
0
-
ns
RE High to WE Low
tRHW
100
-
ns
tWHR
60
-
ns
tRST
-
5
10
500
5(1)
us
us
us
us
tDCBSYR
-
30
us
WE High to RE Low
Device Resetting
Time during ...
Cache Busy in Read Cache
(following 31h and 3Fh)
Read
Program
Erase
Ready
Note:
1. If reset command (FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.5
12/43
ESMT
F59D1G81A / F59D1G161A
NAND Flash Technical Notes
Mask Out Initial Invalid Block(s)
Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by ESMT. The
information regarding the initial invalid block(s) is called as the initial invalid block information. Devices with initial invalid block(s) have
the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An initial invalid block(s) does not
affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The
system design must be able to mask out the initial invalid block(s) via address mapping.
The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 1
bit/528Byte (1 bit/264Word) ECC.
Identifying Initial Invalid Block(s) and Block Replacement Management
All device locations are erased (FFh) except locations where the initial invalid block(s) information is written prior to shipping. The initial
invalid block(s) status is defined by the 1st byte in the spare area. ESMT makes sure that either the 1st or 2nd page of every initial
invalid block has non-FFh data at the 1st byte column address in the spare area. Since the initial invalid block information is also
erasable in most cases, it is impossible to recover the information once it has been erased. Therefore, the system must be able to
recognize the initial invalid block(s) based on the initial invalid block information and create the initial invalid block table via the
following suggested flow chart. Any intentional erasure of the initial invalid block information is prohibited.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.5
13/43
ESMT
F59D1G81A / F59D1G161A
Algorithm for Bad Block Scanning
Check “FFh” at the 1st Byte column address in
the spare area of the 1st and 2nd page in the
block.
For (i=0; i<Num_of_LUs; i++)
{
For (j=0; j<Blocks_Per_LU; j++)
{
Defect_Block_Found=False;
Read_Page(lu=i, block=j, page=0);
If (Data[coloumn= First_Byte_of_Spare_Area]!=FFh) Defect_Block_Found=True;
Read_Page(lu=i, block=j, page=1);
If (Data[coloumn= First_Byte_of_Spare_Area]!=FFh) Defect_Block_Found=True;
If (Defect_Block_Found)
Mark_Block_as_Defective(lu=i, block=j);
}
}
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.5
14/43
ESMT
F59D1G81A / F59D1G161A
Error in Write or Read operation
Within its lifetime, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual data.
The following possible failure modes should be considered to implement a highly reliable system. In the case of status read failure after
erase or program, block replacement should be done. Because program status fail during a page program does not affect the data of
the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased empty block and
reprogramming the current target data and copying the rest of the replaced block. In case of Read, ECC must be employed. To
improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be reclaimed by
ECC without any block replacement. The additional block failure rate does not include those reclaimed blocks.
Failure Mode
Write
Read
Erase failure
Program failure
Single bits failure
Detection and Countermeasure sequence
Read Status after Erase → Block Replacement
Read Status after Program → Block Replacement
Verify ECC → ECC Correction
Note: Error Correcting Code --> Hamming Code etc.
Example: 1bit correction / 528 Byte
Program Flow Chart
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
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F59D1G81A / F59D1G161A
Erase Flow Chart
Read Flow Chart
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F59D1G81A / F59D1G161A
Block Replacement
Addressing for Program Operation
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most
significant bit) pages of the block. Random page address programming is prohibited. In this case, the definition of LSB page is the LSB
among the pages to be programmed. Therefore, LSB page doesn’t need to be page 0.
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F59D1G81A / F59D1G161A
System Interface Using CE Don’t Care
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2,112byte
(1,056word) data registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications that use slow cycle time on the order of μ-seconds, de-activating CE during the data-loading and serial
access would provide significant savings in power consumption.
Program / Read Operation with “ CE not-care”
Address Information
Data
I/O
Data In/Out
I/Ox
Col. Add1
Col. Add2
Row Add1
Row Add2
F59D1G81A
(1Gb x8)
2,112 Byte
I/O 0 ~ I/O 7
A0 ~ A7
A8 ~ A11
A12 ~ A19
A20 ~ A27
F59D1G161A
(1Gb x16)
1,056 Word
I/O 0 ~ I/O 15
A0 ~ A7
A8 ~ A10
A11 ~ A18
A19 ~ A26
Device
Elite Semiconductor Memory Technology Inc.
Address
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F59D1G81A / F59D1G161A
Timing Diagrams
Command Latch Cycle
Address Latch Cycle
Input Data Latch Cycle
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Serial Access Cycle after Read (CLE = L, WE = H, ALE = L)
NOTE:
1. Dout transition is measured at ±200mV from steady state voltage at I/O with load.
2. tRHOH starts to be valid when frequency is lower than 20MHz.
Serial Access Cycle after Read (EDO Type CLE = L, WE = H, ALE = L)
NOTE:
1. Transition is measured at +/-200mV from steady state voltage with load.
This parameter is sample and not 100% tested. (tCHZ, tRHZ)
2. tRLOH is valid when frequency is higher than 33MHZ.
tRHOH starts to be valid when frequency is lower than 33MHZ.
Status Read Cycle
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Read Operation
Read Operation (Intercepted by CE )
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Random Data Output In a Page
Page Program Operation
NOTE: tADL is the time from the WE rising edge of final address cycle to the WE rising edge of the first data cycle.
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Page Program Operation with Random Data Input
NOTE: tADL is the time from the WE rising edge of final address cycle to the WE rising edge of the first data cycle.
Copy-Back Operation with Random Data Input
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Cache Program Operation
Cache Read Operation
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Block Erase Operation
Read ID Operation
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F59D1G81A / F59D1G161A
ID Definition Table
ID Access command = 90h
Product ID
1st Cycle
(Maker Code)
2nd Cycle
(Device Code)
3rd Cycle
4th Cycle
5th Cycle
F59D1G81A (x8)
F59D1G161A (x16)
C8h
C8h
A1h
B1h
80h
80h
15h
55h
40h
40h
Description
1st Byte
2nd Byte
3rd Byte
4th Byte
5th Byte
Maker Code
Device Code
Internal Chip Number, Cell Type, etc.
Page Size, Block Size, etc.
Plane Number, Plane Size, ECC Level
3rd ID Data
Item
Internal Chip Number
Cell Type
Number of
Simultaneously
Programmed Page
Interleave Program
Between Multiple Chips
Cache Program
Description
1
2
4
8
2 Level Cell
4 Level Cell
8 Level Cell
16 Level Cell
1
2
4
8
Not Support
Support
Not Support
Support
I/O7
Description
1KB
2KB
4KB
8KB
8
16
64KB
128KB
256KB
512KB
x8
x16
45ns
Reserved
Reserved
Reserved
I/O7
I/O6
I/O5
I/O4
0
0
1
1
0
1
0
1
I/O5
I/O4
I/O3
I/O2
0
0
1
1
0
1
0
1
I/O3
I/O2
I/O1
0
0
1
1
I/O0
0
1
0
1
I/O1
0
0
1
1
I/O0
0
1
0
1
0
1
0
1
4th ID Data
Item
Page Size
(w/o redundant area)
Redundant Area Size
(byte/512byte)
Block Size
(w/o redundant area)
Organization
Serial Access Time
I/O6
0
1
0
0
1
1
0
1
0
1
0
1
0
0
1
1
Elite Semiconductor Memory Technology Inc.
0
1
0
1
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F59D1G81A / F59D1G161A
5th ID Data
Item
ECC Level
Plane Number
Plane Size
(w/o redundant
area)
Reserved
Description
1bit ECC/512Byte
2bit ECC/512Byte
4bit ECC/512Byte
Reserved
1
2
4
8
64Mb
128Mb
256Mb
512Mb
1Gb
2Gb
4Gb
8Gb
Reserved
I/O7
I/O6
I/O5
I/O4
I/O3
0
0
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
I/O2
I/O1
I/O0
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
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F59D1G81A / F59D1G161A
Device Operation
Page Read
Upon initial device power up, the device defaults to Read mode. This operation is also initiated by writing 00h command, four-cycle
address, and 30h command. After initial power up, the 00h command can be skipped because it has been latched in the command
register. The 2,112Byte (1,056Word) of data on a page are transferred to cache registers via data registers within 25us (tR). Host
controller can detect the completion of this data transfer by checking the R/ B output. Once data in the selected page have been
loaded into cache registers, each Byte can be read out in 45ns cycle time by continuously pulsing RE . The repetitive high-to-low
transitions of RE clock signal make the device output data starting from the designated column address to the last column address.
The device can output data at a random column address instead of sequential column address by using the Random Data Output
command. Random Data Output command can be executed multiple times in a page.
After power up, device is in read mode so 00h command cycle is not necessary to start a read operation.
A page read sequence is illustrated in under figure, where column address, page address are placed in between commands 00h and
30h. After tR read time, the R/ B de-asserts to ready state. Host controller can toggle RE to access data starting with the designated
column address and their successive bytes.
Read Operation
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Random Data Output In a Page
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F59D1G81A / F59D1G161A
Page Program
The device is programmed basically on a page basis, but it does allow multiple partial page programming of a word or consecutive
bytes up to 2,112(x8) or words up to 1,056(x16), in a single page program cycle. The number of consecutive partial page programming
operation within the same page without an intervening erase operation must not exceed 4 times for a single page. Addressing of
page program operations within a block should be in sequential order. A complete page program cycle consists of a serial data input
cycle in which up to 2,112byte (1,056word) of data can be loaded into data register via cache register, followed by a programming
period during which the loaded data are programmed into the designated memory cells.
The serial data input cycle begins with the Serial Data Input command (80h), followed by a four-cycle address input and then serial
data loading. The bytes not to be programmed on the page do not need to be loaded. The column address for the next data can be
changed to the address follows Random Data Input command (85h). Random Data Input command may be repeated multiple times in
a page. The Page Program Confirm command (10h) starts the programming process. Writing 10h alone without entering data will not
initiate the programming process. The internal write engine automatically executes the corresponding algorithm and controls timing for
programming and verification, thereby freeing the host controller for other tasks. Once the program process starts, the host controller
can detect the completion of a program cycle by monitoring the R/ B output or reading the Status bit (I/O6) using the Read Status
command. Only Read Status and Reset commands are valid during programming. When the Page Program operation is completed,
the host controller can check the Status bit (I/O0) to see if the Page Program operation is successfully done. The command register
remains the Read Status mode unless another valid command is written to it.
A page program sequence is illustrated in under figure, where column address, page address, and data input are placed in between
80h and 10h. After tPROG program time, the R/ B de-asserts to ready state. Read Status command (70h) can be issued right after 10h.
Program & Read Status Operation
Random Data Input In a Page
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Cache Program
Cache Program is an extension of Page Program, which is executed with 2,112 bytes (x8) or 1,056 words (x16) data registers, and is
available only within a block. Since the device has 1 page of cache memory, serial data input may be executed while data stored in
data register are programmed into memory cell.
After writing the first set of data up to 2,112 bytes (x8) or 1,056 words (x16) into the selected cache registers, Cache Program
command (15h) instead of actual Page Program (10h) is inputted to make cache registers free and to start internal program operation.
To transfer data from cache registers to data registers, the device remains in Busy state for a short period of time (tCBSY) and has its
cache registers ready for the next data-input while the internal programming gets started with the data loaded into data registers. Read
Status command (70h) may be issued to find out when cache registers become ready by polling the Cache-Busy status bit (I/O6).
Pass/fail status of only the previous page is available upon the return to Ready state. When the next set of data is inputted with the
Cache Program command, tCBSY is affected by the progress of pending internal programming. The programming of the cache registers
is initiated only when the pending program cycle is finished and the data registers are available for the transfer of data from cache
registers. The status bit (I/O5) for internal Ready/Busy may be polled to identity the completion of internal programming. If the system
monitors the progress of programming only with R/ B , the last page of the target programming sequence must be programmed with
actual Page Program command (10h).
Cache Program (available only within a block)
Note:
1. Since programming the last page does not employ caching, the program time has to be that of Page Program. However, if the
previous program cycle with the cache data has not finished, the actual program cycle of the last page is initiated only after
completion of the previous cycle, which can be expressed as the following formula.
2. tPROG = Program time for the last page + Program time for the (last-1)th page – (Program command cycle time + Last page data
loading time)
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Copy-Back Program
Copy-Back Program is designed to efficiently copy data stored in memory cells without time-consuming data reloading when there is
no bit error detected in the stored data. The benefit is particularly obvious when a portion of a block is updated and the rest of the block
needs to be copied to a newly assigned empty block. Copy-Back operation is a sequential execution of Read for Copy-Back and of
Copy-Back Program with Destination address. A Read for Copy-Back operation with “35h” command and the Source address moves
the whole 2,112byte (1,056word) data into the internal buffer. The host controller can detect bit errors by sequentially reading the data
output. Copy-Back Program is initiated by issuing Page-Copy Data-Input command (85h) with Destination address. If data modification
is necessary to correct bit errors and to avoid error propagation, data can be reloaded after the Destination address. Data modification
can be repeated multiple times as shown in under figure. Actual programming operation begins when Program Confirm command (10h)
is issued. Once the program process starts, the Read Status command (70h) may be entered to read the status register. The host
controller can detect the completion of a program cycle by monitoring the R/ B output, or the Status bit (I/O6) of the Status Register.
When the Copy-Back Program is complete, the Status Bit (I/O0) may be checked. The command register remains Read Status mode
until another valid command is written to it.
Page Copy-Back Program Operation
Page Copy-Back Program Operation with Random Data Input
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Block Erase
The block-based Erase operation is initiated by an Erase Setup command (60h), followed by a two-cycle row address, in which only
Plane address and Block address are valid while Page address is ignored. The Erase Confirm command (D0h) following the row
address starts the internal erasing process. The two-step command sequence is designed to prevent memory content from being
inadvertently changed by external noise. At the rising edge of WE after the Erase Confirm command input, the internal control logic
handles erase and erase-verify. When the erase operation is completed, the host controller can check Status bit (I/O0) to see if the
erase operation is successfully done. The under figure illustrates a block erase sequence, and the address input (the first page address
of the selected block) is placed in between commands 60h and D0h. After tBERS erase time, the R/ B de-asserts to ready state. Read
Status command (70h) can be issued right after D0h to check the execution status of erase operation.
Block Erase Operation
Read Status
A status register on the device is used to check whether program or erase operation is completed and whether the operation is
completed successfully. After writing 70h command to the command register, a read cycle outputs the content of the status register to
I/O pins on the falling edge of CE or RE , whichever occurs last. The command allows the system to poll the progress of each device
in multiple memory connections even when R/ B pins are common-wired. RE or CE does not need to toggle for status change.
Read Status command 70h is used to retrieve operating status of commands like page read, page program and block erase.
The command register remains in Read Status mode unless other commands are issued to it. Therefore, if the status register is read
during a random read cycle, a read command (00h) is needed to start read cycles.
Status Register Definition for 70h Command
I/O
Page Program
Block Erase
Read
Cache Read
I/O0
Pass / Fail
Pass / Fail
NA
NA
I/O1
NA
NA
NA
NA
NA
NA
Don’t cared
I/O3
I/O4
NA
Pass/Fail
(for OTP)
NA
NA
Pass: 0
Fail: 1
Don’t cared
NA
NA
NA
NA
NA
NA
I/O5
NA
NA
NA
True Ready / Busy
I/O6
Ready / Busy
Ready / Busy
Ready / Busy
Ready / Busy
I/O7
Write Protect
Write Protect
Write Protect
Write Protect
Don’t cared
Don’t cared
Busy: 0
Ready: 1
Busy: 0
Ready: 1
Protected: 0
Not Protected: 1
I/O2
Definition
Note: I/Os defined ‘NA‘ are recommended to be masked out when Read Status is being executed.
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F59D1G81A / F59D1G161A
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of 00h.
Four read cycles sequentially output the manufacturer code (C8h), and the device code and 3rd, 4th, 5th cycle ID respectively. The
command register remains in Read ID mode until further commands are issued to it.
Read ID Operation
ID Definition Table
st
nd
Product ID
1 Cycle
(Maker Code)
2 Cycle
(Device Code)
3rd Cycle
4th Cycle
5th Cycle
F59D1G81A (x8)
F59D1G161A (x16)
C8h
C8h
A1h
B1h
80h
80h
15h
55h
40h
40h
Reset
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no longer
valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and the
Status Register is cleared to value C0h when WP is high. If the device is already in reset state a new reset command will be accepted
by the command register. The R/ B pin changes to low for tRST after the Reset command is written. Refer to the figure below.
Reset Operation
Device Status Table
Operation Mode
After Power-up
After Reset
00h Command is latched
Waiting for next command
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Cache Read
Cache Read is an extension of Page Read, and is available only within a block. The normal Page Read command (00h-30h) is always
issued before invoking Cache Read. After issuing the Cache Read command (31h), read data of the designated page (page N) are
transferred from data registers to cache registers in a short time period of tDCBSYR, and then data of the next page (page N+1) is
transferred to data registers while the data in the cache registers are being read out. Host controller can retrieve continuous data and
achieve fast read performance by iterating Cache Read operation. The Read Start for Last Page Cache Read command (3Fh) is used
to complete data transfer from memory cells to data registers.
Read Operation with Cache Read
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Ready / Busy
The device has a R/ B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/ B pin is normally high but transition to low after program or erase command is written to the command
register or random read is started after address loading. It returns to high when the internal controller has finished the operation. The
pin is an open-drain driver thereby allowing two or more R/ B outputs to be Or-tied. Because pull-up resistor value is related to tr (R/ B )
and current drain during busy (ibusy), an appropriate value can be obtained with the following reference chart. Its value can be
determined by the following guidance.
Ready/ Busy Pin Electrical Specifications
where IL is the sum of the iput currents of all devices tied to the R/ B pin.
Rp(max) is determined by maximum permissible limit of tr
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Data Protection & Power Up Sequence
The timing sequence shown in the figure below is necessary for the power-on/off sequence.
The device internal initialization starts after the power supply reaches an appropriate level in the power on sequence. During the
initialization the device R/ B signal indicates the Busy state as shown in the figure below. In this time period, the acceptable
commands are 70h.
The WP signal is useful for protecting against data corruption at power on/off.
AC Waveforms for Power Transition
Write Protect Operation
Enabling WP during erase and program busy is prohibited. The erase and program operations are enabled and disabled as follows:
Enable Programming
NOTE: WP keeps “High” until programming finish.
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Disable Programming
Enable Erasing
NOTE: WP keeps “High” until erasing finish.
Disable Erasing
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One-Time Programmable (OTP) Operations
This flash device offers one-time programmable memory area. Thirty full pages of OTP data are available on the device, and the entire
range is guaranteed to be good. The OTP area is accessible only through the OTP commands.
The OTP area leaves the factory in an unwritten state. The OTP area cannot be erased, whether it is protected or not. Protecting the
OTP area prevents further programming of that area.
The OTP area is only accessible while in OTP operation mode. To set the device to OTP operation mode, issue the Set Feature
(EFh-90h-01h) command. When the device is in OTP operation mode, subsequent Read and/or Page Program are applied to the OTP
area. When you want to come back to normal operation, you need to use EFh-90h-00h for OTP mode release. Otherwise, device will
stay in OTP mode.
To program an OTP page, issue the Serial Data Input (80h) command followed by 4 address cycles. The first two address cycles are
column address that must be set as 00h. For the third cycle, select a page in the range of 01h through 1Eh. The fourth cycle is fixed at
00h. Next, up to 2,112 bytes of data can be loaded into data register. The bytes other than those to be programmed do not need to be
loaded. Random Data Input (85h) command in this device is prohibited. The Page Program confirm (10h) command initiates the
programming process. The internal control logic automatically executes the programming algorithm, timing and verification. Please
note that no partial-page program is allowed in the OTP area. In addition, the OTP pages must be programmed in the ascending order.
A programmed OTP page will be automatically protected.
Similarly, to read data from an OTP page, set the device to OTP operation mode and then issue the Read (00h-30h) command. The
device may output random data (not in sequential order) in a page by writing Random Data Output (05h-E0h) command, which can be
operated multiple times in a page. The column address for the next data to be output may be changed to the address follows the
Random Data Output command.
All pages in the OTP area will be protected simultaneously by issuing the Set Feature (EFh-90h-03h) command to set the device to
OTP protection mode. After the OTP area is protected, no page in the area is programmable and the whole area cannot be
unprotected.
The Read Status (70h) command is the only valid command for reading status in OTP operation mode.
OTP Modes and Commands
Set feature
OTP Operation mode
OTP Protection mode
OTP Release mode
Read
Page Program
Program Protect
Leave OTP mode
1
Command
2
EFh-90h -01h
EFh-90h-01h
EFh-90h-03h
EFh-90h-00h
00h-30h
80h-10h
80h-10h
NOTE:
1. 90h is OTP status register address.
2. 00h, 01h and 03h are OTP status register data values.
OTP Area Details
Description
Number of OTP pages
OTP page address
Number of partial page programs for each page in the OTP area
Elite Semiconductor Memory Technology Inc.
Value
30
01h – 1Eh
1
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PACKING
48-LEAD
Symbol
A
A1
A2
b
b1
c
c1
F59D1G81A / F59D1G161A
DIMENSION
TSOP(I) ( 12x20 mm )
Dimension in mm
Min Norm Max
------- ------- 1.20
0.05 ------- 0.15
0.95 1.00
1.05
0.17 0.22
0.27
0.17 0.20
0.23
0.10 ------- 0.21
0.10 ------- 0.16
Dimension in inch
Dimension in mm
Symbol
Min Norm Max
Min Norm Max
------- ------- 0.047
D
20.00 BSC
0.006 ------- 0.002
D1
18.40 BSC
0.037 0.039 0.041
E
12.00 BSC
0.007 0.009 0.011
0.50 BSC
e
0.007 0.008 0.009
L
0.50 0.60
0.70
0.004 ------- 0.008
θ
0O
------8O
0.004 ------- 0.006
Elite Semiconductor Memory Technology Inc.
Dimension in inch
Min Norm Max
0.787 BSC
0.724 BSC
0.472 BSC
0.020 BSC
0.020 0.024 0.028
0O
------8O
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F59D1G81A / F59D1G161A
PACKING
DIMENSIONS
63-BALL
1G NAND Flash ( 9x11 mm )
E
Pin #1
D
A2
A
A1
Seating plane
C
ccc C
Detail A
Detail A
e
e
Solder ball
e
e
b
D1
Detail B
Pin #1
Index
Detail B
E1
Dimension in mm
Symbol
Min
Norm
A
A1
0.25
A2
0.60 BSC
Φb
0.40
D
10.90
11.00
E
8.90
9.00
D1
8.80 BSC
E1
7.20 BSC
e
0.8 BSC
ccc
Controlling dimension : Millimeter.
Elite Semiconductor Memory Technology Inc.
Max
1.00
0.35
Min
0.010
0.50
11.10
9.10
0.016
0.429
0.350
Dimension in inch
Norm
Max
0.039
0.014
0.024 BSC
0.10
0.433
0.354
0.346 BSC
0.283 BSC
0.031 BSC
0.020
0.437
0.358
0.004
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ESMT
F59D1G81A / F59D1G161A
Revision History
Revision
Date
0.1
2011.09.09
0.2
2011.12.05
1.0
2012.03.19
1.1
2012.11.30
Add F59D1G161A product
1.2
2012.12.12
Correct H3 ball of BGA ball configuration (x16)
1.3
2013.05.02
1.4
2013.07.19
1.5
2014.05.21
Elite Semiconductor Memory Technology Inc.
Description
Original
1. Add more description
2. Correct OTP page address
1. Delete "Preliminary"
2. Add BGA package
3. Update the value of TBD
4. Correct typo
1. Correct the description of Page Program
2. Add "No Bad-Block-Erasing-Protect function"
Modify the description of read status and OTP operations
Modify the description of Identifying Initial Invalid Block(s)
and Block Replacement Management
Publication Date: May 2014
Revision: 1.5
42/43
ESMT
F59D1G81A / F59D1G161A
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others.
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To minimize risks associated with customer's application, adequate
design and operating safeguards against injury, damage, or loss from
such failure, should be provided by the customer when making
application designs.
ESMT's products are not authorized for use in critical applications such
as, but not limited to, life support devices or system, where failure or
abnormal operation may directly affect human lives or cause physical
injury or property damage. If products described here are to be used for
such kinds of application, purchaser must do its own quality assurance
testing appropriate to such applications.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.5
43/43