LED DOT MATRIX BL-M14X581 n Ø Ø Ø Ø Ø Ø Features: 37.40mm (1.4”) F 3.0 dot matrix LED display. Low current operation. Excellent character appearance. Easy mounting on P.C. Boards or sockets. I.C. Compatible. ROHS Compliance. Super Bright Electrical-optical characteristics: (Ta=25℃) (Test Condition: IF=20mA) Part No Chip Row Cathode Column Anode Row Anode Column Cathode Emitted Color BL-M14A581S-XX BL-M14B581S-XX Hi Red Super Red Ultra Red VF Unit:V Iv λP (nm) Typ Max TYP.(mcd) GaAlAs/GaAs,SH 660 1.85 2.20 105 GaAlAs/GaAs,DH 660 1.85 2.20 115 GaAlAs/GaAs,DDH 660 1.85 2.20 125 Material BL-M14A581D-XX BL-M14B581D-XX BL-M14A581UR-XX BL-M14B581UR-XX BL-M14A581E-XX BL-M14B581E-XX Orange GaAsP/GaP 635 2.10 2.50 95 BL-M14A581Y-XX BL-M14B581Y-XX Yellow GaAsP/GaP 585 2.10 2.50 95 BL-M14A581G-XX BL-M14B581G-XX Green GaP/GaP 570 2.20 2.50 100 Ultra Bright Electrical-optical characteristics: (Ta=25℃) (Test Condition: IF=20mA) Part No VF Unit:V Chip Iv Material λP (nm) Typ Max TYP.(mcd) Ultra Red AlGaInP 645 2.10 2.50 125 BL-M14B581UE-XX Ultra Orange AlGaInP 630 2.10 2.50 105 BL-M14B581YO-XX Ultra Amber AlGaInP 619 2.10 2.50 105 BL-M14A581UY-XX BL-M14B581UY-XX Ultra Yellow AlGaInP 590 2.10 2.50 105 BL-M14A581UG-XX BL-M14B581UG-XX Ultra Green AlGaInP 574 2.20 2.50 135 BL-M14A581PG-XX BL-M14B581PG-XX Ultra Pure Green InGaN 525 3.80 4.50 155 BL-M14A581B-XX BL-M14B581B-XX Ultra Blue InGaN 470 2.70 4.20 75 BL-M14A581W-XX BL-M14B581W-XX Ultra White InGaN / 2.70 4.20 105 Row Cathode Column Anode Row Anode Column Cathode BL-M14A581UHR-XX BL-M14B581UHR-XX BL-M14A581UE-XX BL-M14A581YO-XX ·-XX: Surface / Lens color： 0 Number Ref Surface Color White Epoxy Color Water clear Emitted Color 1 2 3 4 Black White diffused Gray Red Diffused Red Green Diffused Green Yellow Diffused APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 1 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] 5 LED DOT MATRIX BL-M14X581 Absolute maximum ratings (Ta=25℃ ) Parameter Forward Current IF Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature TOPR S D UR E Y G Unit 25 60 5 25 60 5 25 60 5 25 60 5 25 60 5 30 65 5 mA mW V 150 150 150 150 150 150 mA -40 to +80 ℃ -40 to +85 ℃ Max.260±5℃ for 3 sec Max. (1.6mm from the base of the epoxy bulb) ℃ Storage Temperature TSTG Lead Soldering Temperature T SOL n Absolute maximum ratings (Ta=25°C) Parameter UHR Forward Current IF Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature T OPR Storage Temperature TSTG Lead Soldering Temperature T SOL UE YO UY UG PG B W U nit mA 30 75 5 30 65 5 30 65 5 30 65 5 30 75 5 30 110 5 30 120 5 30 120 5 mW 150 150 150 150 150 150 100 100 mA V -40 to +80 -40 to +85 ℃ Ma x.260±5℃ for 3 sec Max. (1.6mm from the base of the epoxy bulb) ℃ APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 2 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] ℃ LED DOT MATRIX BL-M14X581 ■ Package configuration & Internal circuit diagram Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is ±0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice. APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 3 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] LED DOT MATRIX BL-M14X581 ■ Typical electrical-optical characteristics curves: (A) 1.0 (B) (C) (D) (2) (3) (8) (4) (1) (6) (5) (9) (10) 0.5 0 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 Wavelength(nm) RELATIVE INTENSITY Vs WAVELENGTH(λ p ) (1) - GaAsP/GaAs 655nm/Red (9) - GaAlAs 880nm (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow (10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red (B) - InGaN/SiC 470nm/Blue (C) - InGaN/SiC 505nm/Ultra Green (6) - GaAlAs/GaAs 660nm/Super Red (D) - InGaAl/SiC 525nm/Ultra Green (8) - GaAsP/GaP 610nm/Super Red 8 64 5 2 3 40 30 20 10 0 1.2 1.6 2.0 2.4 2.6 3.0 4.0 3.0 2.0 1.0 0 20 60 80 40 30 20 1 6 2,4,8,A 3 5 10 0 100 20 0.2 4 3 2 -20 -10 0 10 20 30 40 50 60 80 100 4 3 2 70 1 AMBIENT TEMPERATURE Ta(℃ ) 60 30KHz 3KHz 300Hz 100KHz 10KHz 1KHz 100Hz 10 9 8 7 6 5 Ipeak M AX. IDC MAX. 0.5 40 AMBIENT TEMPERATURE Ta(℃) FORWARD CURRENT VS. AMBIENT TEMPERATURE 3KHz 300KHz 1KHz 100KHz F-REFRESH RATE 10 10KHz 9 8 7 6 5 1 5 4 2 3 0.1 -30 40 FORWARD CURRENT (mA) RELATIVE LUMINOUS INTENSITY VS. FORWARD CURRENT Ipeak MAX. IDC MAX. REL ATIVE LUMIN OU S IN TENSITY 1 5 B FORWARD VOLTAGE (Vf) FORWARD CURRENT VS. FORWARD VOLTAGE 3 2 50 1 FORWARD CURRENT(mA) FORWARD CURRENT(mA) RELATIVE LUMINOUS INTENSITY 1 50 1 10 100 1000 tp-PULSE DURATION uS (1,2,3,4,6,8,B.D.J.K) 10,000 1 1 10 100 1000 tp-PULSE DURATION uS (5) NOTE:25℃ free air temperature unless otherwise specified APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 4 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] 10,000