JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS CJM1208 P-Channel MOSFET V(BR)DSS ID RDS(on)MAX DFNWB2×2-6L-J 28mΩ@-4.5V 32mΩ@-3.7V -8A 40mΩ@-2.5V -12V 63mΩ@-1.8V 150mΩ@-1.5V FEATURE APPLICATION PWM application Load switch Battery charge in cellular handset Advanced trench MOSFET process technology Ultra low on-resistance with low gate charge Equivalent Circuit MARKING: ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -12 Gate-Source Voltage VGS ±8 Drain Current-Continuous ID -8 Drain Current-Pulsed IDM* -28 Thermal Resistance from Junction to Ambient RθJA 357 Junction Temperature Tj 150 Storage Temperature TSTG -55 ~+150 Unit V A ℃/W ℃ *Repetitive rating：Pluse width limited by junction temperature. www.cj-elec.com 1 B,May,2015 026)(7(/(&75,&$/&+$5$&7(5,67,&6 Ta =25 Я unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-12V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±8V, VDS = 0V ±0.1 µA -1 V Gate threshold voltage (note 1) Drain-source on-resistance (note 1) Forward tranconductance (note 1) VGS(th) RDS(on) gFS VDS =VGS, ID =-250µA V -12 -0.4 VGS =-4.5V, ID =-5A 28 VGS =-3.7V, ID =-4.6A 32 VGS =-2.5V, ID =-4.3A 40 VGS =-1.8V, ID =-1A 63 VGS =-1.5V, ID =-0.5A 150 VDS =-5V, ID =-5A mΩ 18 S 1275 pF 255 pF 236 pF Dynamic characteristics (note 2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDS =-6V,VGS =0V,f =1MHz f =1MHz 1.9 14 Ω 21 nC 2.3 nC Qgd 3.6 nC td(on) 26 40 ns VDD=-6V,VGEN=-4.5V,ID=-4A 24 40 ns RL=6Ω,RGEN=1Ω 45 70 ns 20 35 ns tr td(off) VDS =-6V,VGS =-4.5V,ID=-5A 19 tf Source-Drain Diode characteristics Diode forward current IS -8 A Diode pulsed forward current ISM -28 A Diode Forward voltage (note 1) VDS -1.2 V 24 48 ns 8 16 nC Diode reverse recovery time (note 2) trr Diode reverse recovery charge (note 2) Qrr Notes : VGS =0V, IS=-4A IF=-4A,dI/dt=100A/µs 1. Pulse test; pulse width≤300μs, duty cycle≤2%. ZZZFMHOHFFRP B,May,2015 7\SLFDO&KDUDFWHULVWLFV Transfer Characteristics Output Characteristics ! ǃǃ ǃ ǃ ! #$%&'( ! ! ! ): ): ć ć ! " ć ć ! $ ć **!* ZZZFMHOHFFRP Threshold Voltage IS —— VSD !!! RDS(ON) —— VGS RDS(ON) —— ID !!! ć ć ! +,#+ć 3 B,May,2015 DFNWB2X2-6L-J Package Outline Dimensions Symbol A A1 A3 D E D1 E1 D2 E2 k b e L Dimensions In Millimeters Min. Max. 0.700 0.800 0.000 0.050 0.203REF. 1.924 2.076 1.924 2.076 0.800 1.000 0.850 1.050 0.200 0.400 0.460 0.660 0.200MIN. 0.250 0.350 0.650TYP. 0.174 0.326 Dimensions In Inches Min. Max. 0.028 0.032 0.000 0.002 0.008REF. 0.076 0.082 0.076 0.082 0.031 0.039 0.033 0.041 0.008 0.016 0.018 0.026 0.008MIN. 0.010 0.014 0.026TYP. 0.007 0.013 DFNWB2X2-6L-J Suggested Pad Layout www.cj-elec.com 4 B,May,2015 DFNWB2X2-6L Tape and Reel www.cj-elec.com 5 B,May,2015