Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR General Description Features The AP2122 series are positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, an error amplifier, a resistor network for setting output voltage, a current limit circuit for current protection and a chip enable circuit . · · · · · The AP2122 series feature high ripple rejection, low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. · · · · · · The AP2122 series have 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.2V and 3.3V versions. The AP2122 are available in standard SOT-23-5 package. AP2122 Low Dropout Voltage at IOUT=100mA: 150mV Typical (Except 1.5V Version) Low Standby Current: 0.1µA Typical Low Quiescent Current: 25µA Typical High Ripple Rejection: 70dB Typical（f=10kHz） Maximum Output Current: More Than 150mA (300mA Limit) Extremely Low Noise: 30µVrms (10Hz to 100kHz) Excellent Line Regulation: 4mV Typical Excellent Load Regulation: 12mV Typical High Output Voltage Accuracy: ±2% Excellent Line and Load Transient Response Compatible with Low ESR Ceramic Capacitor (as Low as 1µF) Applications · · · · · · Mobile Phones, Cordless Phones MP3/4 Portable Electronic Devices Cameras, Video Recorders Sub-board Power Supplies for Telecom Equipment Battery Powered Equipment SOT-23-5 Figure 1. Package Type of AP2122 Sep. 2006 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Pin Configuration K Package (SOT-23-5) VOUT 1 GND 2 VIN 3 5 NC 4 CE Figure 2. Pin Configuration of AP2122 (Top View) Pin Description Pin Number Pin Name Function 1 VOUT Regulated output voltage 2 GND Ground 3 VIN Input voltage 4 CE Active high enable input pin. Logic high=enable, logic low=shutdown 5 NC No connection Sep. 2006 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Functional Block Diagram VIN 1 3 VOUT VREF CURRENT LIMIT CE 4 2 GND Figure 3. Functional Block Diagram of AP2122 Sep. 2006 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Ordering Information AP2122 E1: Lead Free Circuit Type TR: Tape and Reel A: Active High (Pull-down resistor built-in) 1.5: 1.8: 2.5: 2.8: 3.0: 3.2: 3.3: Package K: SOT-23-5 Package SOT-23-5 Temperature Range -40 to 85oC Condition Part Number Fixed Output 1.5V Fixed Output 1.8V Fixed Output 2.5V Fixed Output 2.8V Fixed Output 3.0V Fixed Output 3.2V Fixed Output 3.3V Marking ID Packing Type Active High (Pull-down resistor built-in) AP2122AK-1.5TRE1 E2Z Tape & Reel Active High (Pull-down resistor built-in) AP2122AK-1.8TRE1 E2U Tape & Reel Active High (Pull-down resistor built-in) AP2122AK-2.5TRE1 E2V Tape & Reel Active High (Pull-down resistor built-in) AP2122AK-2.8TRE1 E2W Tape & Reel Active High (Pull-down resistor built-in) AP2122AK-3.0TRE1 E2X Tape & Reel Active High (Pull-down resistor built-in) AP2122AK-3.2TRE1 E3Y Tape & Reel Active High (Pull-down resistor built-in) AP2122AK-3.3TRE1 E2Y Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Sep. 2006 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Input Voltage VIN 6.5 V Enable Input Voltage VCE -0.3 to VIN+0.3 V Output Current IOUT 300 mA TJ 150 oC Storage Temperature Range TSTG -65 to 150 oC Lead Temperature (Soldering, 10sec) TLEAD 260 Thermal Resistance (Note 2) θJA 250 oC/W ESD (Human Body Model) ESD 2000 V ESD (Machine Model) ESD 200 V Junction Temperature o C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(max), the junction-to-ambient thermal resistance, θJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(max)=(TJ(max) TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature. Recommended Operating Conditions Parameter Symbol Min Max Unit Input Voltage VIN 2 6 V TJ -40 85 oC Operating Junction Temperature Range Sep. 2006 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Electrical Characteristics AP2122-1.5 Electrical Characteristics (VIN=2.5V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Symbol VOUT Input Voltage VIN Output Current IOUT Conditions VIN=2.5V 1mA≤IOUT≤30mA VIN-VOUT=1V Min Typ Max Unit 1.47 1.5 1.53 V 6 V 150 mA Load Regulation VRLOAD VIN=2.5V 1mA≤IOUT≤80mA 12 40 mV Line Regulation VRLINE 2.3V≤VIN≤6V IOUT=30mA 4 16 mV Dropout Voltage VDROP Quiescent Current IQ IOUT=10mA 400 600 IOUT=100mA 400 600 IOUT=150mA 400 600 VIN=2.5V, IOUT=0mA 25 50 µA 1 µA mV Standby Current ISTD VIN=2.5V VCE in OFF mode 0.1 Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p, f=10kHz VIN=2.5V 70 dB ±150 µV/oC ±100 ppm/oC 50 mA 30 µVrms Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise ∆VOUT/∆T (∆VOUT/VOUT)/∆T ILIMIT VNOISE IOUT=30mA VOUT=0V o TA=25 C 10Hz ≤f≤100kHz CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" CE Pull-down Internal Resistance RPD 1.5 2.5 Sep. 2006 Rev. 1. 1 V 5 0.25 V 10 MΩ BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Electrical Characteristics (Continued) AP2122-1.8 Electrical Characteristics (VIN=2.8V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Symbol VOUT Input Voltage VIN Output Current IOUT Conditions VIN=2.8V 1mA≤IOUT≤30mA VIN-VOUT=1V Min Typ Max Unit 1.764 1.8 1.836 V 6 V 150 mA Load Regulation VRLOAD VIN=2.8V 1mA≤IOUT≤80mA 12 40 mV Line Regulation VRLINE 2.3V≤VIN≤6V IOUT=30mA 4 16 mV Dropout Voltage VDROP Quiescent Current IQ IOUT=10mA 20 40 IOUT=100mA 150 300 IOUT=150mA 200 400 VIN=2.8V, IOUT=0mA 25 50 µA 1 µA mV Standby Current ISTD VIN=2.8V VCE in OFF mode 0.1 Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p, f=10kHz VIN=2.8V 70 dB ±180 µV/oC ±100 ppm/oC 50 mA 30 µVrms Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise ∆VOUT/∆T (∆VOUT/VOUT)/∆T ILIMIT VNOISE IOUT=30mA VOUT=0V o TA=25 C 10Hz ≤f≤100kHz CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" CE Pull-down Internal Resistance RPD 1.5 2.5 Sep. 2006 Rev. 1. 1 V 5 0.25 V 10 MΩ BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Electrical Characteristics (Continued) AP2122-2.5 Electrical Characteristics (VIN=3.5V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Symbol VOUT Input Voltage VIN Output Current IOUT Conditions VIN=3.5V 1mA≤IOUT≤30mA VIN-VOUT=1V Min Typ Max Unit 2.45 2.5 2.55 V 6 V 150 mA Load Regulation VRLOAD VIN=3.5V 1mA≤IOUT≤80mA 12 40 mV Line Regulation VRLINE 3V≤VIN≤6V IOUT=30mA 4 16 mV IOUT=10mA 20 40 Dropout Voltage VDROP IOUT=100mA 150 300 IOUT=150mA 200 400 VIN=3.5V, IOUT=0mA 25 50 µA VIN=3.5V VCE in OFF mode 0.1 1 µA Ripple 0.5Vp-p, f=10kHz VIN=3.5V 70 dB ±250 µV/oC ±100 ppm/oC 50 mA 30 µVrms Quiescent Current IQ Standby Current ISTD Power Supply Rejection Ratio PSRR Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise ∆VOUT/∆T (∆VOUT/VOUT)/∆T ILIMIT VNOISE IOUT=30mA VOUT=0V o TA=25 C 10Hz ≤f≤100kHz CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" CE Pull-down Internal Resistance RPD 1.5 2.5 Sep. 2006 Rev. 1. 1 mV V 5 0.25 V 10 MΩ BCD Semiconductor Manufacturing Limited 8 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Electrical Characteristics (Continued) AP2122-2.8 Electrical Characteristics (VIN=3.8V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Symbol VOUT Input Voltage VIN Output Current IOUT Conditions VIN=3.8V 1mA≤IOUT≤30mA VIN-VOUT=1V Min Typ Max Unit 2.744 2.8 2.856 V 6 V 150 mA Load Regulation VRLOAD VIN=3.8V 1mA≤IOUT≤80mA 12 40 mV Line Regulation VRLINE 3.3V≤VIN≤6V IOUT=30mA 4 16 mV Dropout Voltage VDROP Quiescent Current IQ IOUT=10mA 20 40 IOUT=100mA 150 300 IOUT=150mA 200 400 VIN=3.8V, IOUT=0mA 25 50 µA 1 µA mV Standby Current ISTD VIN=3.8V VCE in OFF mode 0.1 Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p, f=10kHz VIN=3.8V 70 dB ±280 µV/oC ±100 ppm/oC 50 mA 30 µVrms Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise ∆VOUT/∆T (∆VOUT/VOUT)/∆T ILIMIT VNOISE IOUT=30mA VOUT=0V o TA=25 C 10Hz ≤f≤100kHz CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" CE Pull-down Internal Resistance RPD 1.5 2.5 Sep. 2006 Rev. 1. 1 V 5 0.25 V 10 MΩ BCD Semiconductor Manufacturing Limited 9 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Electrical Characteristics (Continued) AP2122-3.0 Electrical Characteristics (VIN=4V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Symbol VOUT Input Voltage VIN Output Current IOUT Conditions VIN=4V 1mA≤IOUT≤30mA VIN-VOUT=1V Min Typ Max Unit 2.94 3.0 3.06 V 6 V 150 mA Load Regulation VRLOAD VIN=4V 1mA≤IOUT≤80mA 12 40 mV Line Regulation VRLINE 3.5V≤VIN≤6V IOUT=30mA 4 16 mV IOUT=10mA 20 40 IOUT=100mA 150 300 IOUT=150mA 200 400 VIN=4V, IOUT=0mA 25 50 µA 1 µA Dropout Voltage Quiescent Current VDROP IQ mV Standby Current ISTD VIN=4V VCE in OFF mode 0.1 Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p, f=10kHz VIN=4V 70 dB ±300 µV/oC ±100 ppm/oC Output Voltage Temperature Coefficient ∆VOUT/∆T (∆VOUT/VOUT)/∆T IOUT=30mA Short Current Limit ILIMIT VOUT=0V 50 mA RMS Output Noise VNOISE TA=25oC 10Hz ≤f≤100kHz 30 µVrms CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" CE Pull-down Internal Resistance RPD 1.5 2.5 Sep. 2006 Rev. 1. 1 V 5 0.25 V 10 MΩ BCD Semiconductor Manufacturing Limited 10 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Electrical Characteristics (Continued) AP2122-3.2 Electrical Characteristics (VIN=4.2V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Symbol VOUT Input Voltage VIN Output Current IOUT Conditions VIN=4.2V 1mA≤IOUT≤30mA VIN-VOUT=1V Min Typ Max Unit 3.136 3.2 3.264 V 6 V 150 mA Load Regulation VRLOAD VIN=4.2V 1mA≤ IOUT≤ 80mA 12 40 mV Line Regulation VRLINE 3.7V≤VIN≤6V IOUT=30mA 4 16 mV Dropout Voltage VDROP Quiescent Current IQ IOUT=10mA 20 40 IOUT=100mA 150 300 IOUT=150mA 200 400 VIN=4.2V, IOUT=0mA 25 50 µA 1 µA mV Standby Current ISTD VIN=4.2V VCE in OFF mode 0.1 Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p, f=10kHz VIN=4.2V 70 dB ±320 µV/oC ±100 ppm/oC 50 mA 30 µVrms Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise ∆VOUT/∆T (∆VOUT/VOUT)/∆T ILIMIT VNOISE IOUT=30mA VOUT=0V o TA=25 C 10Hz ≤f≤100kHz CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" CE Pull-down Internal Resistance RPD 1.5 2.5 Sep. 2006 Rev. 1. 1 V 5 0.25 V 10 MΩ BCD Semiconductor Manufacturing Limited 11 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Electrical Characteristics (Continued) AP2122-3.3 Electrical Characteristics (VIN=4.3V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Symbol VOUT Input Voltage VIN Output Current IOUT Conditions VIN=4.3V 1mA≤IOUT≤30mA VIN-VOUT=1V Min Typ Max Unit 3.234 3.3 3.366 V 6 V 150 mA Load Regulation VRLOAD VIN=4.3V 1mA≤ IOUT≤ 80mA 12 40 mV Line Regulation VRLINE 3.8V≤VIN≤6V IOUT=30mA 4 16 mV IOUT=10mA 20 40 Dropout Voltage VDROP IOUT=100mA 150 300 IOUT=150mA 200 400 VIN=4.3V, IOUT=0mA 25 50 µA VIN=4.3V VCE in OFF mode 0.1 1 µA Ripple 0.5Vp-p, f=10kHz VIN=4.3V 70 dB ±330 µV/oC ±100 ppm/oC 50 mA 30 µVrms Quiescent Current IQ Standby Current ISTD Power Supply Rejection Ratio PSRR Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise ∆VOUT/∆T (∆VOUT/VOUT)/∆T ILIMIT VNOISE IOUT=30mA VOUT=0V o TA=25 C 10Hz ≤f≤100kHz CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" CE Pull-down Internal Resistance RPD 1.5 2.5 Sep. 2006 Rev. 1. 1 mV V 5 0.25 V 10 MΩ BCD Semiconductor Manufacturing Limited 12 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Typical Performance Characteristics 3.5 1.5 3.0 Output Voltage (V) Output Voltage (V) 1.2 0.9 0.6 AP2122-1.5 VIN=2.0V VIN=2.5V 0.3 AP2122-3.0 VIN=3.3V 2.5 VIN=4V 2.0 VIN=6V 1.5 1.0 0.5 VIN=3.0V 0.0 0.0 0 50 100 150 200 250 300 0 350 50 100 150 200 250 300 350 Output Current (mA) Output Current (mA) Figure 4. Output Voltage vs. Output Current Figure 5. Output Voltage vs. Output Current 3.50 1.50 3.25 Output Voltage (V) Output Voltage (V) 1.25 1.00 0.75 0.50 AP2122-1.5 IOUT=30mA 0.25 3.00 2.75 2.50 AP2122-3.0 IOUT=30mA 2.25 2.00 0.00 0 1 2 3 4 5 6 0 7 1 2 3 4 5 6 7 Input Voltage (V) Input Voltage (V) Figure 6. Output Voltage vs. Input Voltage Figure 7. Output Voltage vs. Input Voltage Sep. 2006 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 13 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 0.6 0.6 0.5 0.5 Dropout Voltage (V) Dropout Voltage (V) Typical Performance Characteristics (Continued) 0.4 0.3 Minimum Operating Requirement 0.2 0.1 0.4 0.3 0.2 0.1 AP2122-1.5 AP2122-3.0 0.0 0.0 0 40 80 120 160 0 200 40 80 200 Figure 9. Dropout Voltage vs. Output Current Figure 8. Dropout Voltage vs. Output Current 1.60 3.10 1.58 3.08 1.56 3.06 Output Voltage (V) Output Voltage (V) 160 Output Current (mA) Output Current (mA) 1.54 1.52 1.50 1.48 1.46 120 1.44 AP2122-1.5 VIN=2.5V 1.42 IOUT=30mA 3.04 3.02 3.00 2.98 2.96 2.94 AP2122-3.0 VIN=4V 2.92 IOUT=30mA 2.90 1.40 -25 0 25 50 75 100 -25 125 0 25 50 75 100 125 o o Junction Temperature ( C) Junction Temperature ( C) Figure 10. Output Voltage vs. Junction Temperature Figure 11. Output Voltage vs. Junction Temperature Sep. 2006 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 14 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 60 60 50 50 Supply Current (µA) Supply Current (µA) Typical Performance Characteristics (Continued) 40 30 20 AP2122-1.5 IOUT=0mA 10 40 30 20 AP2122-3.0 IOUT=0mA 10 0 0 0 1 2 3 4 5 6 0 7 1 2 40 40 35 35 30 30 25 20 15 AP2122-1.5 VIN=2.5V 5 6 7 25 20 15 AP2122-3.0 VIN=4V 10 IOUT=0mA 5 4 Figure 13. Supply Current vs. Input Voltage Supply Current (µA) Supply Current (µA) Figure 12. Supply Current vs. Input Voltage 10 3 Input Voltage (V) Input Voltage (V) IOUT=0mA 5 0 0 -25 0 25 50 75 100 -25 125 0 25 50 75 100 125 o o Junction Temperature ( C) Junction Temperature ( C) Figure 14. Supply Current vs. Junction Temperature Figure 15. Supply Current vs. Junction Temperature Sep. 2006 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 15 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Typical Performance Characteristics (Continued) 7 5.5 6 VIN (1V/Div) AP2122-1.5 3.5 2.5 ∆VOUT (0.05V/Div) ∆VOUT (0.05V/Div) VIN (1V/Div) 4.5 0.05 0 -0.05 5 4 0.05 0 -0.05 -0.1 -0.1 Time (20µs/Div) Time (40µs/Div) Figure 17. Line Transient (Conditions: IOUT=30mA, CIN=1µF, COUT=1µF) Figure 16. Line Transient (Conditions: IOUT=30mA, CIN=1µF, COUT=1µF) 3.2 VOUT (0.1V/Div) AP2122-1.5 1.6 1.5 1.4 IOUT (100mA/Div) VOUT (0.1V/Div) 1.7 IOUT (50mA/Div) AP2122-3.0 100 50 0 -50 AP2122-3.0 3.1 3.0 2.9 200 100 0 -100 Time (200µs/Div) Time (200µs/Div) Figure 19. Load Transient (Conditions: VIN=4V, CIN=1µF, COUT=1µF) Figure 18. Load Transient (Conditions: VIN=2.5V, CIN=1µF, COUT=1µF) Sep. 2006 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 16 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Typical Performance Characteristics (Continued) 100 100 80 90 IOUT=30mA 80 IOUT=30mA 70 CIN=COUT=1µF PSRR (dB) CIN=COUT=1µF PSRR (dB) AP2122-3.0 VIN=4V AP2122-1.5 VIN=2.5V 60 40 60 50 40 30 20 20 10 0 10 100 1k 10k 100k 0 10 1M Frequency (Hz) 100 1k 10k 100k Frequency (Hz) Figure 20. PSRR vs. Frequency Figure 21. PSRR vs. Frequency Sep. 2006 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 17 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Typical Application AP2122-3.0 VIN =4V VIN VIN VOUT =3V VOUT VOUT GND COUT NC CE 1µF CIN 1µF Note: Filter capacitors are required at the AP2122's input and output. 1µF capacitor is required at the input. The minimum output capacitance required for stability should be more than 1µF with ESR from 0.01Ω to 100Ω. Ceramic capacitors are recommended. Figure 22. Typical Application of AP2122 Sep. 2006 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 18 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Mechanical Dimensions SOT-23-5 Unit: mm(inch) 0.300(0.012) 0.600(0.024) 1.500(0.059) 1.700(0.067) 0.100(0.004) 0.200(0.008) 2.950(0.116) 2.650(0.104) 2.820(0.111) 3.020(0.119) 0.200(0.008) 0.700(0.028) REF 0.300(0.012) 0.400(0.016) 0° 8° 1.800(0.071) 2.000(0.079) 1.250(0.049) 1.050(0.041) 0.950(0.037) TYP 0.000(0.000) 0.100(0.004) 1.050(0.041) 1.150(0.045) Sep. 2006 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 19 http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951, Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A