FDMC510P P-Channel PowerTrench® MOSFET -20 V, -18 A, 8.0 mΩ Features General Description Max rDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for rDS(ON), switching performance and ruggedness. Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A Max rDS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A Max rDS(on) = 17 mΩ at VGS = -1.5 V, ID = -8.3 A High performance trench technology for extremely low rDS(on) Applications High power and current handling capability in a widely used surface mount package Battery Management Load Switch 100% UIL Tested Termination is Lead-free and RoHS Compliant HBM ESD capability level >2 KV typical (Note 4) Bottom Top Pin 1 S S S G D D D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C TJ, TSTG ±8 V -54 (Note 1a) -Pulsed PD Units V -18 -12 A -50 Single Pulse Avalanche Energy EAS Ratings -20 37 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 41 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case 3 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC510P Device FDMC510P ©2010 Fairchild Semiconductor Corporation FDMC510P Rev.C5 Package MLP 3.3X3.3 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC510P P-Channel PowerTrench® MOSFET June 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±100 nA -1.0 V -20 V -12 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance -0.4 -0.5 3 mV/°C VGS = -4.5 V, ID = -12 A 6.4 8.0 VGS = -2.5 V, ID = -10 A 7.6 9.8 VGS = -1.8 V, ID = -9.3 A 9.2 13 VGS = -1.5 V, ID = -8.3 A 11 17 VGS = -4.5 V, ID = -12 A, TJ = 125 °C 8.5 12 VDS = -5 V, ID = -12 A 75 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1 MHz 5910 7860 pF 840 1120 pF 738 1110 pF 15 27 ns 34 55 ns 338 540 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time 170 272 ns Qg(TOT) Total Gate Charge VGS = 0 V to -4.5 V 83 116 nC VGS = 0 V to -2.5 V VDD = -10 V, ID = -12 A 50 70 6.3 nC 20.4 nC Qg(TOT) Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -10 V, ID = -12 A, VGS = -4.5 V, RGEN = 6 Ω nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -12 A (Note 2) -0.70 -1.3 VGS = 0 V, IS = -2 A (Note 2) -0.53 -1.2 IF = -12 A, di/dt = 100 A/µs V 35 57 ns 20 32 nC Notes: 1: RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper b. 125 °C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: Starting TJ = 25oC; P-Ch: L = 3 mH, IAS = -5 A, VDD = -20 V, VGS = -4.5 V. 4: No gate overvoltage rating is implied. FDMC510P Rev.C5 2 www.fairchildsemi.com FDMC510P P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 50 5 40 VGS = -4.5 V VGS = -2.5 V 30 VGS = -1.8 V 20 VGS = -1.2 V 10 PULSE DURATION = 80 µs DUTY CYCLE = 0.5%MAX 0 0.0 0.5 1.0 1.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = - 1.5 V 4 VGS = -1.2 V 3 VGS = -1.5 V 2 1 0 2.0 0 10 20 30 40 50 -ID, DRAIN CURRENT (A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.5 25 ID = -12 A VGS = -4.5 V 1.4 rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -4.5 V VGS = -2.5 V Figure 1. On Region Characteristics PULSE DURATION = 80 µs DUTY CYCLE = 0.5%MAX 20 ID = -12 A 15 TJ = 125 oC 10 TJ = 25 oC 5 0 1.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 50 -IS, REVERSE DRAIN CURRENT (A) 100 PULSE DURATION = 80 µs DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) VGS = -1.8 V 40 VDS = -5 V 30 TJ = 150 oC 20 TJ = 25 oC 10 TJ = -55 oC 0 0.0 0.5 1.0 1.5 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.0 2.0 0.2 0.4 0.6 0.8 1.0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC510P Rev.C5 3 1.2 www.fairchildsemi.com FDMC510P P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 20000 ID = -12 A 10000 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 3.0 VDD = -12 V VDD = -8 V VDD = -10 V 1.5 Ciss 20 40 60 80 f = 1 MHz VGS = 0 V 100 1 Figure 7. Gate Charge Characteristics 20 Figure 8. Capacitance vs Drain to Source Voltage 60 -ID, DRAIN CURRENT (A) 20 -IAS, AVALANCHE CURRENT (A) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 TJ = 25 oC TJ = 100 oC TJ = 125 oC 50 VGS = -4.5 V 40 VGS = -2.5 V 30 20 10 o Limited by Package 1 0.1 1 10 100 0 25 1000 50 P(PK), PEAK TRANSIENT POWER (W) 10 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms 1s SINGLE PULSE TJ = MAX RATED 10 s RθJA = 125 oC/W DC TA = 25 oC 0.1 1 10 80 150 SINGLE PULSE RθJA = 125oC/W TA = 25oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMC510P Rev.C5 125 1000 100 us 0.01 0.01 100 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 0.1 75 o Figure 9. Unclamped Inductive Switching Capability 1 RθJC = 3 C/W TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) -ID, DRAIN CURRENT (A) Crss 400 0.1 0.0 0 Coss 1000 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC510P P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMC510P Rev.C5 5 www.fairchildsemi.com FDMC510P P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMC510P P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout FDMC510P Rev.C5 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 FDMC510P Rev.C5 7 www.fairchildsemi.com FDMC510P P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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