Central CTLDM304P-M832DS Surface mount dual p-channel enhancement-mode silicon mosfet Datasheet

CTLDM304P-M832DS
SURFACE MOUNT
DUAL P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLDM304P-M832DS
is a dual enhancement-mode P-Channel silicon MOSFET
designed for high speed pulsed amplifier and driver
applications. This energy efficient MOSFET offers
beneficially low rDS(ON), low gate charge, and low
threshold voltage.
MARKING CODE: C430
TLM832DS CASE
APPLICATIONS:
• Switching circuits
• DC-DC converters
• Power management
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
• Low rDS(ON)
• High drain current
• Low gate charge
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
ΘJA
UNITS
V
V
A
A
W
°C
°C/W
30
12
4.2
30
1.65
-55 to +150
76
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IGSSF, IGSSR VGS=12V, VDS=0
100
IDSS
VDS=24V, VGS=0
1.0
BVDSS
VGS=0, ID=250μA
30
VGS(th)
VGS=VDS, ID=250μA
0.7
1.0
1.3
rDS(ON)
VGS=10V, ID=4.2A
60
70
rDS(ON)
VGS=4.5V, ID=4.0A
64
75
rDS(ON)
VGS=2.5V, ID=1.0A
86
120
Qg(tot)
VDS=15V, VGS=4.5V, ID=4.0A
6.4
Qgs
VDS=15V, VGS=4.5V, ID=4.0A
1.8
Qgd
VDS=15V, VGS=4.5V, ID=4.0A
1.4
Crss
VDS=15V, VGS=0, f=1.0MHz
53
Ciss
VDS=15V, VGS=0, f=1.0MHz
760
Coss
VDS=15V, VGS=0, f=1.0MHz
50
ton
VDD=15V, VGS=10V, ID=1.0A
RL=3.6Ω, RG=6.0Ω
40
toff
VDD=15V, VGS=10V, ID=1.0A
RL=3.6Ω, RG=6.0Ω
75
UNITS
nA
μA
V
V
mΩ
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
R1 (9-October 2012)
CTLDM304P-M832DS
SURFACE MOUNT
DUAL P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
TLM832DS CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Gate Q1
2) Source Q1
3) Gate Q2
4) Source Q2
5)
6)
7)
8)
Drain
Drain
Drain
Drain
Q2
Q2
Q1
Q1
MARKING CODE: C430
R1 (9-October 2012)
w w w. c e n t r a l s e m i . c o m
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