Ordering number : ENA1837A AML2002 Bipolar Transistor 200V, 0.7A, Low VCE(sat), NPN Single TO-126ML http://onsemi.com Features • • • • VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE(sat)=0.125V(typ.)@IC=0.35A High-speed switching tf=70ns(typ.)@IC=0.3A The plastic-covered heat sink eliminates the need for an insulator when mounting the AML2002 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C Unit 220 V 200 V 8 V 0.7 A 2 A 1.5 W 10 W 150 °C -55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7516A-002 • Package : TO-126ML • JEITA, JEDEC : TO-126 • Minimum Packing Quantity : 200 pcs./bag AML2002 8.0 4.0 3.6 Electrical Connection 2 3.0 11.0 3 LOT No. 1.5 7.5 L2002 1 3.0 1.6 0.8 0.8 0.75 Marking 3.3 1.0 1.4 1.0 15.5 0.7 2 3 1.7 1 1 : Emitter 2 : Collector 3 : Base 2.4 4.8 TO-126ML Semiconductor Components Industries, LLC, 2013 September, 2013 82912 TKIM/12611CB TKIM TC-00002562 No. A1837-1/7 AML2002 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO VCB=100V, IE=0A VEB=4V, IC=0A Gain-Bandwidth Product hFE fT VCE=5V, IC=100mA VCE=10V, IC=100mA Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=10V, f=1MHz IC=0.35A, IB=35mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings Conditions min typ Unit max 200 1 μA 1 μA 560 120 MHz 9 IC=0.35A, IB=35mA V(BR)CBO V(BR)CEO IC=10μA, IE=0A IC=1mA, RBE=∞ V(BR)EBO ton IE=10μA, IC=0A tstg tf See specified Test Circuit. pF 125 220 0.82 1.2 mV V 220 V 200 V 8 V 50 ns 2 μs 70 ns Switching Time Test Circuit IB1 PW=50μs D.C.≤1% OUTPUT IB2 INPUT RB RL 50Ω + 820μF VCC=100V IC=10IB1= --10IB2=0.3A Ordering Information Shipping memo 200pcs./bag Pb Free IC -- VCE 0.6 0.5 20mA 0.4 4mA 0.3 6mA 8mA 10mA 0.2 2mA IB=0mA 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Collector-to-Emitter Voltage, VCE -- V 0.9 1.0 IT15964 500μA 700 0.14 μA 400μA A 0.7 0μ A 0.16 0.8 600μA 90 0.18 60mA 50mA 40mA 30mA Collector Current, IC -- A 80mA 80 100mA 0.9 IC -- VCE 0.20 0μ A 1.0 Collector Current, IC -- A Package TO-126ML 1m Device AML2002 0.12 300μA 0.10 0.08 200μA 0.06 0.04 100μA 0.02 0 IB=0μA 0 1 2 3 4 5 6 7 8 9 Collector-to-Emitter Voltage, VCE -- V 10 IT15965 No. A1837-2/7 AML2002 IC -- VBE 0.8 DC Current Gain, hFE 0.5 0.4 0.3 0.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Base-to-Emitter Voltage, VBE -- V DC Current Gain, hFE 2.0 V V .0V =5 E V VC 0.5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7 2 0.1 3 5 Collector Current, IC -- A Cob -- VCB 100 10 7 5 3 2 2 3 5 7 10 2 3 VCE(sat) -- IC 1.0 7 5 3 2 °C Ta=75 0.1 7 5 --25°C 3 2 0.01 0.01 2 3 5 7 0.1 25°C 2 3 Collector Current, IC -- A 5 7 1.0 IT15971 5 7 1.0 IT15967 5 3 2 100 7 5 3 2 2 3 5 7 2 0.1 3 5 VCE(sat) -- IC 7 1.0 IT15968 IC / IB=10 5 3 2 0.1 5°C 7 7 Ta= 5 ° --25 3 C C 25° 2 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 IT15970 5 7 1.0 IT15972 Collector Current, IC -- A VBE(sat) -- IC 1.0 IC / IB=20 3 2 3 7 IC / IB=10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 10 7 5 2 0.1 VCE=10V 1.0 5 7 100 IT15969 Collector-to-Base Voltage, VCB -- V 7 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 2 5 7 1.0 5 fT -- IC 10 0.01 1.0 IT15956 3 3 3 7 7 5 2 2 Collector Current, IC -- A f=1MHz 7 1.0 0.1 10 7 5 1000 1.0 100 7 5 3 2 1.0 0.01 1.0 Ta=25°C 3 2 100 7 5 IT15966 hFE -- IC 100 7 5 25°C --25°C 3 2 Gain-Bandwidth Product, fT -- MHz 0 --25°C 0.1 VCE=5V Ta=75°C 3 2 0.6 Ta= 75° C 25°C Collector Current, IC -- A 0.7 0 hFE -- IC 1000 7 5 VCE=5V Ta= --25°C 7 75°C 25°C 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 Collector Current, IC -- A No. A1837-3/7 AML2002 ASO s 0.01 7 5 3 2 Ta=25°C Single pulse 0.001 0.01 2 3 5 70.1 2 3 5 71.0 2 3 5 7 10 2 3 5 7100 2 3 5 71000 IT16012 IC=0.7A 0.1 7 5 3 2 1m 0.01 7 5 3 2 PC -- Ta s Tc=25°C Single pulse 0.001 0.01 2 3 5 70.1 2 3 5 71.0 2 3 5 7 10 Collector-to-Emitter Voltage, VCE -- V 1.6 <10μs n io at er op s m 1m s 0μ 50 n io at er op 0.1 7 5 3 2 1.0 7 5 3 2 C D μs s 10ms 100ms μs 100 0m ICP=2A s 0μ 50 <10μs 100 10 IC=0.7A Collector Current, IC -- A ICP=2A 10 1.0 7 5 3 2 ASO 10 7 5 3 2 C D Collector Current, IC -- A 10 7 5 3 2 2 3 5 7100 2 3 5 71000 IT16013 Collector-to-Emitter Voltage, VCE -- V PC -- Tc 12 1.5 Collector Dissipation, PC -- W Collector Dissipation, PC -- W 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT15974 10 8 6 4 2 0 0 25 50 75 100 125 Case Temperature, Tc -- °C 150 175 IT15975 No. A1837-4/7 AML2002 Bag Packing Specification AML2002 No. A1837-5/7 AML2002 Outline Drawing AML2002 Mass (g) Unit 0.97 mm * For reference No. A1837-6/7 AML2002 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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