EM513 THRU EM518 HD ZC44 DO-4 1 Plastic-Encapsulate Diodes Features ●Io 1A DO-4 1 ●VRRM 50V-1000V ●High surge current capability ● Polarity: Color band denotes cathode Applications ● Rectifier Marking ● 1N400X X:From 1 to 7 Item Symbol Repetitive Peak Reverse Voltage Maximum RMS Voltage ÿÿ VRRM V RMS ÿ EM513 EM516 V 1600 1800 2000 V 1120 1260 1400 Unit Conditions Average Forward Current IF(AV) A 60HZ Half-sine wave, Resistance load,Ta=50℃ 1 Surge(Non-repetitive)Forward Current IFSM A 60HZ Half-sine wave,1 cycle,Ta=25℃ 30 Tj ℃ -55~+125 Tstg ℃ -55 ~ +150 Junction Temperature Storage Temperature EM518 Electrical Characteristics (T=25℃ Unless otherwise specified） Item Peak Forward Voltage Peak Reverse Current Thermal Resistance(Typical) Symbol Unit Test Condition VFM V IFM=1.0A IRRM1 IRRM2 μA RθJ-A VRM=VRRM Max 1.1 Ta=25℃ 5 Ta=125℃ 50 Between junction and ambient 55 Between junction and lead 25 ℃/W RθJ-L High Diode Semiconductor 1 FIG.2 : MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.1: FORWARD CURRENT DERATING CURVE ︵ ︶ IFSM A 0 . 1 50 8 . 0 40 6 . 0 8.3ms Single Half Sine Wave JEDEC Method 30 4 . 0 20 S 2 . 0 0 10 0 0 1 0 ingle Phase Half Wave 60HZ Resisteve or Inductive Load 0.375''(9.5mm) Lead Length 50 IR(uA) ︶ IO(A Typical Characteristics 1 150 Ta(℃) 2 4 6 8 10 20 40 60 80 100 Number of Cycles FIG.4:TYPICAL REVERSE CHARACTERISTICS 1000 100 Tj=125℃ 10 Tj=100℃ 1.0 Tj=25℃ 0.1 0.01 0 20 40 60 80 100 Voltage(%) High Diode Semiconductor 2 DIA .080(2.03) .107(2.72) 1.0(25.4) MIN .205(5.21) .166(4.22) DIA .028(0.71) .034(0.86) 1.0(25.4) MIN DO-4 1 Unit: in inches (millimeters) JSHD JSHD High Diode Semiconductor 3 Ammo Box Packaging Specifications For Axial Lead Rectifiers High Diode Semiconductor 4