BTA/BTB12 and T12 Series ® 12A TRIACS SNUBBERLESS™, LOGIC LEVEL & STANDARD MAIN FEATURES: A2 Symbol Value Unit IT(RMS) 12 A VDRM/VRRM 600 and 800 V IGT (Q ) 1 5 to 50 mA G A1 A2 DESCRIPTION Available either in through-hole or surface-mount packages, the BTA/BTB12 and T12 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... The snubberless versions (BTA/BTB...W and T12 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. Logic level versions are designed to interface directly with low power drivers such as microcontrollers. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734) A1 A2 G D2PAK (T12-G) A2 A1 A2 G A1 A2 G TO-220AB Insulated (BTA12) TO-220AB (BTB12) ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I ²t dI/dt Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns VDSM/VRSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range September 2002 - Ed: 6A Value Unit 12 A A D²PAK/TO-220AB Tc = 105°C TO-220AB Ins. Tc = 90°C F = 50 Hz t = 20 ms 120 F = 60 Hz t = 16.7 ms 126 tp = 10 ms 78 A² s F = 120 Hz Tj = 125°C 50 A/µs tp = 10 ms Tj = 25°C VDRM/VRRM V tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C + 100 1/7 BTA/BTB12 and T12 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants) Symbol IGT (1) VGT Test Conditions VD = 12 V Quadrant RL = 30 Ω VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C IH (2) IT = 100 mA IL IG = 1.2 IGT T12 TW SW CW BW 35 5 10 35 50 I - II - III MAX. I - II - III MAX. 1.3 I - II - III MIN. 0.2 I - III ■ mA V V MAX. 35 10 15 35 50 mA MAX. 50 10 25 50 70 mA 60 15 30 60 80 MIN. 500 20 40 500 1000 V/µs MIN. - 3.5 6.5 - - A/ms VD = 67 %VDRM gate open Tj = 125°C (dI/dt)c (2) (dV/dt)c = 0.1 V/µs Unit T1235 II dV/dt (2) BTA/BTB12 Tj = 125°C (dV/dt)c = 10 V/µs Tj = 125°C - 1 2.9 - - Without snubber Tj = 125°C 6.5 - - 6.5 12 STANDARD (4 Quadrants) Symbol Test Conditions IGT (1) VD = 12 V Quadrant RL = 30 Ω VD = VDRM RL = 3.3 kΩ Tj = 125°C IH (2) IT = 500 mA IL IG = 1.2 IGT 25 50 50 100 Unit ALL MAX. 1.3 V ALL MIN. 0.2 V I - III - IV VD = 67 %VDRM gate open Tj = 125°C (dV/dt)c (2) (dI/dt)c = 5.3 A/ms B MAX. Tj = 125°C mA MAX. 25 50 mA MAX. 40 50 mA 80 100 MIN. 200 400 V/µs MIN. 5 10 V/µs II dV/dt (2) C I - II - III IV VGT VGD BTA/BTB12 STATIC CHARACTERISTICS Symbol VT (2) Test Conditions ITM = 17 A tp = 380 µs Unit MAX. 1.55 V Vto (2) Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 35 mΩ IDRM VDRM = VRRM Tj = 25°C 5 µA 1 mA IRRM Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 2/7 Tj = 25°C Value Tj = 125°C MAX. BTA/BTB12 and T12 Series THERMAL RESISTANCES Symbol Parameter Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient S=1 Value Unit D²PAK/TO-220AB 1.4 °C/W TO-220AB Insulated 2.3 D²PAK 45 TO-220AB TO-220AB Insulated 60 cm² °C/W S = Copper surface under tab PRODUCT SELECTOR Voltage (xxx) Sensitivity Type Package X 50 mA Standard TO-220AB X X 50 mA Snubberless TO-220AB BTA/BTB12-xxxC X X 25 mA Standard TO-220AB BTA/BTB12-xxxCW X X 35 mA Snubberless TO-220AB BTA/BTB12-xxxSW X X 10 mA Logic level TO-220AB BTA/BTB12-xxxTW X X 5 mA Logic Level TO-220AB T1235-xxxG X X 35 mA Snubberless D²PAK Part Number 600 V 800 V BTA/BTB12-xxxB X BTA/BTB12-xxxBW BTB: non insulated TO-220AB package ORDERING INFORMATION BT A 12 - 600 BW (RG) TRIAC SERIES INSULATION: A: insulated B: non insulated SENSITIVITY & TYPE B: 50mA STANDARD BW: 50mA SNUBBERLESS C: 25mA STANDARD CW: 35mA SNUBBERLESS SW: 10mA LOGIC LEVEL TW: 5mA LOGIC LEVEL VOLTAGE: 600: 600V 800: 800V CURRENT: 12A T 12 35 - 600 G PACKING MODE Blank: Bulk RG: Tube (-TR) TRIAC SERIES PACKAGE: G: D2PAK CURRENT: 12A VOLTAGE: 600: 600V 800: 800V SENSITIVITY: 35: 35mA PACKING MODE: Blank: Tube -TR: Tape & Reel 3/7 BTA/BTB12 and T12 Series OTHER INFORMATION Part Number Marking Weight Base quantity Packing mode BTA/BTB12-xxxyz BTA/BTB12-xxxyz 2.3 g 250 Bulk BTA/BTB12-xxxyzRG BTA/BTB12-xxxyz 2.3 g 50 Tube T1235-xxxG T1235xxxG 1.5 g 50 Tube T1235-xxxG-TR T1235xxxG 1.5 g 1000 Tape & reel Note: xxx = voltage, yy = sensitivity, z = type Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). Fig. 2-1: RMS on-state current versus case temperature (full cycle). P (W) IT(RMS) (A) 16 14 12 10 8 6 4 2 0 IT(RMS)(A) 0 1 2 3 4 5 6 7 8 9 10 11 12 Fig. 2-2: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm),full cycle. 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 BTB/T12 BTA Tc(°C) 0 25 50 75 100 125 Fig. 3: Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] IT(RMS) (A) 3.5 D2PAK (S=1cm2) 3.0 1E+0 Zth(j-c) 2.5 2.0 1E-1 Zth(j-a) 1.5 1.0 0.5 0.0 4/7 Tamb(°C) 0 25 50 75 tp(s) 100 125 1E-2 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 BTA/BTB12 and T12 Series Fig. 4: values). On-state characteristics (maximum Fig. 5: Surge peak on-state current versus number of cycles. ITM (A) ITSM (A) 100 Tj max 10 Tj=25°C Tj max. Vto = 0.85 V Rd = 35 mΩ VTM(V) 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. 130 120 110 100 90 80 70 60 50 40 30 20 10 0 One cycle Repetitive Tc=90°C Number of cycles 1 10 100 1000 Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). ITSM (A), I²t (A²s) IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C] Tj initial=25°C dI/dt limitation: 50A/µs 1000 t=20ms Non repetitive Tj initial=25°C 2.5 2.0 IGT ITSM 1.5 100 I²t IH & IL 1.0 0.5 tp (ms) 10 0.01 Tj(°C) 0.10 1.00 10.00 Fig. 8-1: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (BW/CW/T1235). -20 0 20 40 60 80 100 120 140 Fig. 8-2: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (TW). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 5.0 2.8 4.5 2.4 SW 4.0 3.5 2.0 C 1.6 0.0 -40 2.5 1.2 BW/CW/T1235 0.8 0.4 0.0 0.1 TW 3.0 B 2.0 1.5 1.0 (dV/dt)c (V/µs) 1.0 10.0 (dV/dt)c (V/µs) 0.5 100.0 0.0 0.1 1.0 10.0 100.0 5/7 BTA/BTB12 and T12 Series Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. Fig. 10: D²PAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 µm). (dI/dt)c [Tj] / (dI/dt)c [Tj specified] Rth(j-a) (°C/W) 6 80 5 70 D²PAK 60 4 50 40 3 30 2 20 1 0 10 Tj (°C) 0 0 25 50 75 100 125 S(cm²) 0 4 8 12 16 20 24 28 32 36 PACKAGE MECHANICAL DATA D²PAK (Plastic) DIMENSIONS REF. A E Min. C2 L2 D L L3 A1 B2 R C B G A2 2.0 MIN. FLAT ZONE V2 FOOTPRINT DIMENSIONS (in millimeters) D²PAK (Plastic) 16.90 10.30 5.08 1.30 3.70 8.90 6/7 Millimeters A A1 A2 B B2 C C2 D E G L L2 L3 R V2 4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 Typ. 4.60 2.69 0.23 0.93 1.40 0.40 0° Max. Inches Min. Typ. Max. 0.169 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.048 0.055 0.60 0.017 0.024 1.36 0.047 0.054 9.35 0.352 0.368 10.28 0.393 0.405 5.28 0.192 0.208 15.85 0.590 0.624 1.40 0.050 0.055 1.75 0.055 0.069 0.016 8° 0° 8° 40 BTA/BTB12 and T12 Series PACKAGE MECHANICAL DATA TO-220AB / TO-220AB Ins. DIMENSIONS B REF. C Millimeters Inches b2 Min. L F I A l4 c2 a1 l3 l2 a2 b1 M c1 e A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M 15.20 Typ. Max. Min. 15.90 0.598 Typ. Max. 0.625 3.75 0.147 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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