Weitron BD233 Npn epitaxial planar transistor Datasheet

BD233/235/237
NPN Epitaxial Planar Transistors
1. EMITTER
2. COLLECTOR
3. BASE
P b Lead(Pb)-Free
1
2
3
TO-126
ABSOLUTE MAXIMUM RATINGS(TA=25ºC)
Rating
Symbol
BD233
BD235
BD237
Unit
Collector-Emitter Voltage
VCBO
45
60
100
V
Collector-Base Voltage
VCEO
45
60
80
V
Emitter-Base Voltage
VEBO
5.0
5.0
5.0
V
Collector Current
IC
2.0
A
Power Disspation
PD
1.25
W
Junction Temperature
Tj
150
˚C
Storage , Temperature
Tstg
-65 to +150
˚C
Device Marking
BD233 = BD233 , BD235 = BD235 , BD237 = BD237
WEITRON
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BD233/235/237
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max
Unit
V(BR)CBO
45
60
100
-
V
V(BR)CEO
45
60
80
-
V
V(BR)EBO
5.0
-
V
ICBO
-
100
µA
IEBO
-
1.0
mA
DC Current Gain
VCE = 2.0V, IC = 150mA
VCE = 2.0V, IC = 1.0A
hFE(1)
hFE(2)
40
25
-
-
Collector-Emitter Saturation Voltage
IC = 1.0A, IB = 100mA
VCE(sat)
-
0.6
V
fT
3.0
-
MHz
Collector-Emitter Breakdown Voltage
IC = 100µA, IE = 0
BD233
BD235
BD237
Collector-Base Breakdown Voltage
IC = 10mA, IB = 0
BD233
BD235
BD237
Emitter-Base Breakdown Voltage
IC = 0, IE = 100µA
Collector Cutoff Current
VCB = 45V, IE=0
VCB = 60V, IE=0
VCB = 100V, IE=0
Emitter Cutoff Current
VEB = 5.0V, IC=0
BD233
BD235
BD237
ON CHARACTERISTICS
Transition frequency
VCE = 10V, IC = 250mA, f = 10MHz
WEITRON
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BD233/235/237
TO-126 Outline Dimensions
G
S
M
H
L
D
C
J
E
K
TO-126
A
B
φ
unit:mm
Dim
A
B
C
D
E
G
H
J
K
L
M
S
φ
WEITRON
http://www.weitron.com.tw
MAX
Min
2.500
2.900
1.100
1.500
0.660
0.860
1.170
1.370
0.450
0.600
7.400
7.800
10.600
11.000
2.290TYP
4.480
4.680
15.300
15.700
2.100
2.300
3.900
4.100
3.200
3.000
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