BD233/235/237 NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead(Pb)-Free 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Symbol BD233 BD235 BD237 Unit Collector-Emitter Voltage VCBO 45 60 100 V Collector-Base Voltage VCEO 45 60 80 V Emitter-Base Voltage VEBO 5.0 5.0 5.0 V Collector Current IC 2.0 A Power Disspation PD 1.25 W Junction Temperature Tj 150 ˚C Storage , Temperature Tstg -65 to +150 ˚C Device Marking BD233 = BD233 , BD235 = BD235 , BD237 = BD237 WEITRON http://www.weitron.com.tw BD233/235/237 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit V(BR)CBO 45 60 100 - V V(BR)CEO 45 60 80 - V V(BR)EBO 5.0 - V ICBO - 100 µA IEBO - 1.0 mA DC Current Gain VCE = 2.0V, IC = 150mA VCE = 2.0V, IC = 1.0A hFE(1) hFE(2) 40 25 - - Collector-Emitter Saturation Voltage IC = 1.0A, IB = 100mA VCE(sat) - 0.6 V fT 3.0 - MHz Collector-Emitter Breakdown Voltage IC = 100µA, IE = 0 BD233 BD235 BD237 Collector-Base Breakdown Voltage IC = 10mA, IB = 0 BD233 BD235 BD237 Emitter-Base Breakdown Voltage IC = 0, IE = 100µA Collector Cutoff Current VCB = 45V, IE=0 VCB = 60V, IE=0 VCB = 100V, IE=0 Emitter Cutoff Current VEB = 5.0V, IC=0 BD233 BD235 BD237 ON CHARACTERISTICS Transition frequency VCE = 10V, IC = 250mA, f = 10MHz WEITRON http://www.weitron.com.tw BD233/235/237 TO-126 Outline Dimensions G S M H L D C J E K TO-126 A B φ unit:mm Dim A B C D E G H J K L M S φ WEITRON http://www.weitron.com.tw MAX Min 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290TYP 4.480 4.680 15.300 15.700 2.100 2.300 3.900 4.100 3.200 3.000