APTGT75SK60T1G Buck chopper Trench + Field Stop IGBT® Power Module 5 6 VCES = 600V IC = 75A @ Tc = 80°C Application 11 • • Q1 CR1 Features 7 8 • 3 4 NTC CR2 1 AC and DC motor control Switched Mode Power Supplies 2 • • • 12 Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Internal thermistor for temperature monitoring High level of integration Benefits • • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings ICM VGE PD RBSOA TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 100 75 140 ±20 250 150A @ 550V Unit V A August, 2007 IC Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTGT75SK60T1G – Rev 0 Symbol VCES APTGT75SK60T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 75A Tj = 150°C VGE = VCE, IC = 600µA VGE = 20V, VCE = 0V Typ 5.0 1.5 1.7 5.8 Min Typ Max Unit 250 1.9 µA 6.5 600 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Test Conditions Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 4620 300 140 Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 75A RG = 4.7Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 75A RG = 4.7Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 75A Tj = 25°C RG = 4.7Ω Tj = 150°C 110 45 200 Tf Fall Time Td(on) Turn-on Delay Time Tr Rise Time Turn-off Delay Time Fall Time Td(off) Tf Eon Turn-on Switching Energy Eoff Turn-off Switching Energy pF ns 40 120 50 250 60 0.35 0.6 2.2 2.6 ns mJ mJ Chopper diode ratings and characteristics IRM Test Conditions Min Maximum Reverse Leakage Current IF DC Forward current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Typ Max 600 Maximum Peak Repetitive Reverse Voltage V VR=600V Tj = 25°C Tj = 150°C IF = 75A VGE = 0V Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C 75 1.6 1.5 100 Tj = 150°C Tj = 25°C 150 3.6 Tj = 150°C Tj = 25°C Tj = 150°C 7.6 0.85 1.8 IF = 75A VR = 300V di/dt =2000A/µs www.microsemi.com Unit 250 500 µA A 2 V ns August, 2007 VRRM µC mJ 2–5 APTGT75SK60T1G – Rev 0 Symbol Characteristic APTGT75SK60T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 2500 -40 -40 -40 2.5 Max 0.60 0.98 Unit °C/W V 175 125 100 4.7 80 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min Typ 50 3952 Max Unit kΩ K R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 − T25 T See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–5 APTGT75SK60T1G – Rev 0 August, 2007 SP1 Package outline (dimensions in mm) APTGT75SK60T1G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 150 150 TJ=25°C TJ = 150°C VGE=19V 125 125 75 VGE=15V 75 50 50 25 25 VGE=9V TJ=25°C 0 0 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 5 TJ=25°C 125 E (mJ) 75 TJ=150°C TJ=25°C 3 Er 2 8 9 10 11 0 12 25 50 VCE = 300V VGE =15V IC = 75A TJ = 150°C 125 150 Reverse Bias Safe Operating Area 150 125 Eon IC (A) E (mJ) 100 175 Eoff 3 2 100 75 50 Er 1 75 IC (A) Switching Energy Losses vs Gate Resistance 4 3.5 Eoff VGE (V) 5 3 0 0 7 2.5 1 25 6 1.5 2 VCE (V) Eon TJ=125°C 5 1 VCE = 300V VGE = 15V RG = 4.7Ω TJ = 150°C 4 100 50 0.5 Energy losses vs Collector Current Transfert Characteristics 150 IC (A) VGE=13V 100 TJ=150°C IC (A) IC (A) TJ=125°C 100 VGE=15V TJ=150°C RG=4.7Ω 25 Eon 0 0 0 5 10 15 20 25 30 Gate Resistance (ohms) 35 40 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.4 0.3 0.2 0.1 IGBT 0.9 August, 2007 0.6 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4–5 APTGT75SK60T1G – Rev 0 Thermal Impedance (°C/W) 0.7 APTGT75SK60T1G Forward Characteristic of diode 150 VCE=300V D=50% RG=4.7Ω TJ=150°C 100 ZVS 80 125 100 Tc=85°C 60 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 ZCS 75 TJ=125°C 50 40 Hard switching 20 TJ=150°C 25 TJ=25°C 0 0 0 20 40 60 80 0 100 0.4 IC (A) 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.2 Diode 1 0.8 0.9 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTGT75SK60T1G – Rev 0 August, 2007 Rectangular Pulse Duration in Seconds