MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR20AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR20AM OUTLINE DRAWING Dimensions in mm 10.5 MAX. 4.5 1.3 7.0 3.2 ± 0.2 φ 3.6 ± 0.2 1.0 12.5 MIN. TYPE NAME VOLTAGE CLASS 3.6 16 MAX. ➃ 0.8 E 2.5 0.5 2.6 4.5 2.5 ➀➁➂ ➁➃ ................................................................ 20A ● VDRM ...................................................... 400V / 600V ● IFGT !, IRGT ! , IRGT # ................... 30mA (20mA) ✽5 ➀ ● IT (RMS) ✽ Measurement point of case temperature ➀ T1 TERMINAL ➁ T2 TERMINAL ➂ ➂ GATE TERMINAL ➃ T2 TERMINAL TO-220 APPLICATION Vacuum cleaner, light dimmer, copying machine, other control of motor and heater MAXIMUM RATINGS Symbol VDRM VDSM Voltage class Parameter 8 Repetitive peak off-state voltage✽1 Non-repetitive peak off-state voltage✽1 Symbol 400 500 Parameter Unit 12 600 V V 720 Ratings Unit I T (RMS) I TSM RMS on-state current Surge on-state current Commercial frequency, sine full wave, Tc=105°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Conditions 20 200 A A I 2t I 2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 167 A2s PGM Peak gate power dissipation PG (AV) VGM Average gate power dissipation Peak gate voltage 5 0.5 W W 10 V I GM Tj Peak gate current Junction temperature 2 –40 ~ +125 A °C T stg — Storage temperature Weight –40 ~ +125 2.0 °C g Typical value ✽1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR20AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. — Typ. — Max. 2.0 Unit I DRM Repetitive peak off-state current Tj=125°C, VDRM applied V TM V FGT ! On-state voltage Tc=25°C, I TM=30A, Instantaneous measurement — — — — 1.5 1.5 V RGT ! V RGT # Gate trigger voltage✽2 Tj=25°C, V D=6V, RL=6Ω, RG=330Ω ✽3 — — — — 1.5 1.5 V V — — 30 ✽5 — — — — 30 ✽5 30 ✽5 mA mA 0.2 — — — — 0.8 °C/ W ✽3 — — V/µs ! @ # I FGT ! I RGT ! Gate trigger I RGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM Rth (j-c) Thermal resistance Junction to case ✽4 (dv/dt)c Critical-rate of rise of off-state commutating voltage ! current ✽2 @ Tj=25°C, V D=6V, RL=6Ω, RG=330Ω ✽3 # mA V V mA V ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. ✽4. The contact thermal resistance Rth (c-f) in case of greasing is 1°C/W. ✽5. High sensitivity (I GT ≤ 20mA) is also available. (I GT itme ➀) Voltage class VDRM (V) 8 400 (dv/dt)c Symbol Min. R — L 10 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c R — L 10 3. Peak off-state voltage VD=400V 600 Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj=125°C 2. Rate of decay of on-atate commutating current (dv/dt)c=–10A/ms V/µs 12 Test conditions Unit TIME (di/dt)c TIME TIME VD PERFORMANCE CURVES 103 7 5 3 2 200 102 7 5 3 2 101 7 5 3 2 RATED SURGE ON-STATE CURRENT Tj = 125°C Tj = 25°C 100 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR20AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 102 3 2 VGM = 10V PG(AV) = 0.5W PGM = 5W 101 7 5 IGM = 2A 3 VGT = 1.5V 2 100 7 5 3 2 7 5 IRGT I 3 2 102 7 5 IFGT I 3 2 IRGT III 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 JUNCTION TEMPERATURE (°C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 50 160 360° CONDUCTION 40 RESISTIVE, INDUCTIVE LOADS 30 20 10 0 103 JUNCTION TEMPERATURE (°C) 103 7 5 4 3 2 0 GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE GATE CURRENT (mA) CASE TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) IFGT I , IRGT I , IRGT III VGD = 0.2V 10–1 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE VOLTAGE (V) 7 5 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 100 (%) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) 4 8 12 16 20 24 28 RMS ON-STATE CURRENT (A) 32 140 120 100 80 360° CONDUCTION 60 RESISTIVE, INDUCTIVE 40 LOADS 20 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR20AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 120 160 160 t2.3 100 100 t2.3 60 60 t2.3 100 80 60 40 20 5 10 15 REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 LACHING CURRENT (mA) 101 7 5 3 2 40 20 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 103 7 5 4 3 TYPICAL EXAMPLE IH(typ) = 20mA 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 103 3 2 60 HOLDING CURRENT VS. JUNCTION TEMPERATURE 104 7 5 80 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 3 2 102 100 RMS ON-STATE CURRENT (A) 7 5 3 2 120 RMS ON-STATE CURRENT (A) 105 7 5 NATURAL CONVECTION NO FINS CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS 140 0 20 100 (%) 0 HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 100 (%) 0 DISTRIBUTION T2+, G– TYPICAL EXAMPLE ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, T2+, G+ TYPICAL T2– , G– EXAMPLE 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 100 (%) 140 AMBIENT TEMPERATURE (°C) ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED NATURAL CONVECTION BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) AMBIENT TEMPERATURE (°C) 160 ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR20AM BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125°C GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 140 III QUADRANT 120 100 80 I QUADRANT 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) 100 (%) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE COMMUTATION CHARACTERISTICS 102 7 MINIMUM 5 CHARAC- III QUADRANT 3 TERISTICS 2 VALUE 101 7 5 3 2 TYPICAL EXAMPLE 100 Tj = 125°C 7 I QUADRANT 5 IT = 4A τ = 500µs 3 2 VD = 200V f = 3Hz –1 10 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 103 6Ω TYPICAL EXAMPLE 7 5 4 3 A 6V 330Ω V 2 102 TEST PROCEDURE 7 5 4 3 A 6V V 330Ω TEST PROCEDURE 6Ω 2 A 6V 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE TRIGGER PULSE WIDTH (µs) V 330Ω TEST PROCEDURE Feb.1999