Fairchild FDMS86300DC N-channel dual cooltm power trenchâ® mosfet 80 v, 60 a, 3.1 mî© Datasheet

FDMS86300DC
N-Channel Dual CoolTM Power Trench® MOSFET
80 V, 60 A, 3.1 mΩ
Features
„ Dual
CoolTM
General Description
Top Side Cooling PQFN package
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s
advanced
Power
Trench®
process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
„ Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 24 A
„ Max rDS(on) = 4.0 mΩ at VGS = 8 V, ID = 21 A
„ High performance technology for extremely low rDS(on)
„ 100% UIL Tested
Applications
„ RoHS Compliant
„ Synchronous Rectifier for DC/DC Converters
„ Telecom Secondary Side Rectification
„ High End Server/Workstation Vcore Low Side
D
D
D
S
Pin 1
S
D
S
D
S
D
G
D
D
G
Top
S
S
Pin 1
S
Bottom
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
PD
TJ, TSTG
Units
V
±20
V
60
148
(Note 1a)
-Pulsed
24
A
150
Single Pulse Avalanche Energy
EAS
Ratings
80
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
240
125
(Note 1a)
Operating and Storage Junction Temperature Range
3.2
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
(Top Source)
2.3
RθJC
Thermal Resistance, Junction to Case
(Bottom Drain)
1.0
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
38
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
81
RθJA
Thermal Resistance, Junction to Ambient
(Note 1i)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1j)
23
RθJA
Thermal Resistance, Junction to Ambient
(Note 1k)
11
°C/W
Package Marking and Ordering Information
Device Marking
86300
Device
FDMS86300DC
©2012 Fairchild Semiconductor Corporation
FDMS86300DC Rev. C1
Package
Dual CoolTM Power 56
1
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET
March 2012
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 64 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
4.5
V
80
V
45
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 24 A
2.6
3.1
rDS(on)
Static Drain to Source On Resistance
VGS = 8 V, ID = 21 A
3.1
4.0
VGS = 10 V, ID = 24 A, TJ = 125 °C
4.1
5.0
VDD = 10 V, ID = 24 A
79
gFS
Forward Transconductance
2.5
3.3
-11
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 40 V, VGS = 0 V,
f = 1 MHz
5265
7005
pF
929
1235
pF
21
50
pF
Ω
1.2
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
29
47
VDD = 40 V , ID = 24 A,
VGS = 10 V, RGEN = 6 Ω
25
44
ns
35
57
ns
9
18
ns
Total Gate Charge
VGS = 0 V to 10 V
72
101
nC
Total Gate Charge
VGS = 0 V to 8 V
59
84
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 40 V
ID = 24 A
ns
nC
26
nC
14
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
©2012 Fairchild Semiconductor Corporation
FDMS86300DC Rev. C1
VGS = 0 V, IS = 2.7 A
(Note 2)
0.72
1.2
VGS = 0 V, IS = 24 A
(Note 2)
0.80
1.3
IF = 24 A, di/dt = 100 A/μs
2
V
56
88
ns
42
67
nC
www.fairchildsemi.com
FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
RθJC
Thermal Resistance, Junction to Case
(Top Source)
2.3
RθJC
Thermal Resistance, Junction to Case
(Bottom Drain)
1.0
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
38
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
81
RθJA
Thermal Resistance, Junction to Ambient
(Note 1c)
27
RθJA
Thermal Resistance, Junction to Ambient
(Note 1d)
34
RθJA
Thermal Resistance, Junction to Ambient
(Note 1e)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1f)
19
RθJA
Thermal Resistance, Junction to Ambient
(Note 1g)
26
RθJA
Thermal Resistance, Junction to Ambient
(Note 1h)
61
RθJA
Thermal Resistance, Junction to Ambient
(Note 1i)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1j)
23
RθJA
Thermal Resistance, Junction to Ambient
(Note 1k)
11
RθJA
Thermal Resistance, Junction to Ambient
(Note 1l)
13
°C/W
NOTES:
1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
b. 81 °C/W when mounted on
a minimum pad of 2 oz copper
a. 38 °C/W when mounted on
a 1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 oC, L = 0.3 mH, IAS = 40 A, VDD = 72 V, VGS = 10 V.
©2012 Fairchild Semiconductor Corporation
FDMS86300DC Rev. C1
3
www.fairchildsemi.com
FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET
Thermal Characteristics
150
ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
6
VGS = 7 V
VGS = 6.5 V
120
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
90
VGS = 8 V
VGS = 6 V
60
30
0
VGS = 5.5 V
0
1
2
3
4
5
VGS = 6 V
VGS = 7 V
2
1
5
0
30
60
90
120
150
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
15
ID = 24 A
VGS = 10 V
1.8
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
-75
-50
SOURCE ON-RESISTANCE (mΩ)
2.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V
VGS = 8 V
0
Figure 1. On-Region Characteristics
IS, REVERSE DRAIN CURRENT (A)
120
VDS = 5 V
90
= 150 oC
60
TJ = 25 oC
30
3
4
5
9
TJ = 125 oC
6
3
TJ = 25 oC
6
7
8
9
oC
6
200
100
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
7
VGS = 0 V
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2012 Fairchild Semiconductor Corporation
FDMS86300DC Rev. C1
10
Figure 4. On-Resistance vs Gate to
Source Voltage
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55
12
VGS, GATE TO SOURCE VOLTAGE (V)
150
TJ
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 24 A
0
5
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
VGS = 6.5 V
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 5.5 V
4
4
1.2
www.fairchildsemi.com
FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
10000
VDD = 30 V
ID = 24 A
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 50 V
VDD = 40 V
6
4
1000
Coss
Crss
100
2
f = 1 MHz
10 VGS = 0 V
0
0
20
40
60
5
0.1
80
Figure 7. Gate Charge Characteristics
80
150
ID, DRAIN CURRENT (A)
VGS = 10 V
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
120
VGS = 8 V
90
60
Limited by Package
30
o
RθJC = 1.0 C/W
1
0.01
0.1
1
10
100
0
25
500
50
100
125
150
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
2000
P(PK), PEAK TRANSIENT POWER (W)
200
100
10
1
75
o
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
10
Figure 8. Capacitance vs Drain
to Source Voltage
100
IAS, AVALANCHE CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
THIS AREA IS
LIMITED BY rDS(on)
0.1
1 ms
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 81 oC/W
10 s
TA = 25 oC
0.01
0.01
0.1
DC
1
10
100
400
TA = 25 oC
100
10
1 -3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2012 Fairchild Semiconductor Corporation
FDMS86300DC Rev. C1
SINGLE PULSE
RθJA = 81 oC/W
1000
Figure 12. Single Pulse Maximum
Power Dissipation
5
www.fairchildsemi.com
FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
0.01
o
RθJA = 81 C/W
0.001 -3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMS86300DC Rev. C1
6
www.fairchildsemi.com
FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET
Dimensional Outline and Pad Layout
©2012 Fairchild Semiconductor Corporation
FDMS86300DC Rev. C1
7
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
©2012 Fairchild Semiconductor Corporation
FDMS86300DC Rev. C1
8
www.fairchildsemi.com
FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
PowerTrench®
F-PFS™
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®
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TINYOPTO™
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Current Transfer Logic™
Saving our world, 1mW/W/kW at a time™
ISOPLANAR™
TinyPWM™
DEUXPEED®
Marking Small Speakers Sound Louder SignalWise™
TinyWire™
SmartMax™
Dual Cool™
and Better™
TranSiC®
SMART START™
EcoSPARK®
MegaBuck™
TriFault Detect™
EfficentMax™
Solutions for Your Success™
MICROCOUPLER™
TRUECURRENT®*
ESBC™
SPM®
MicroFET™
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