SPICE MODEL: BSS84V BSS84V NEW PRODUCT Lead-free Green DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · Low On-Resistance Low Gate Threshold Voltage A Low Input Capacitance SOT-563 Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 3) B C “Green” Device (Note 4) Mechanical Data · · · · · · · · D Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C M K Terminals: Finish ¾ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Min Max Typ A 0.15 0.30 0.25 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D G Case: SOT-563 Dim H L Terminal Connections: See Diagram 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.56 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 ¾ All Dimensions in mm Marking Code (See Page 2): K84 Ordering & Date Code Information: See Page 2 D2 G1 S1 S2 G2 D1 Weight: 0.006 grams (approx.) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Units Drain-Source Voltage Characteristic VDSS -50 V Drain-Gate Voltage (Note 1) VDGR -50 V Gate-Source Voltage Continuous VGSS ±20 V Drain Current (Note 2) Continuous ID -130 mA Pd 150 mW RqJA 833 °C/W Tj, TSTG -55 to +150 °C Total Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient (Note 2) Operating and Storage Temperature Range Note: 1. R GS £ 20KW. 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. No purposefully added lead. 4. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30605 Rev. 7 - 2 1 of 4 www.diodes.com BSS84V ã Diodes Incorporated NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition BVDSS -50 -75 ¾ V VGS = 0V, ID = -250mA Zero Gate Voltage Drain Current IDSS ¾ ¾ ¾ ¾ ¾ ¾ -15 -60 -100 µA µA nA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C Gate-Body Leakage IGSS ¾ ¾ ±50 nA VGS = ±20V, VDS = 0V VGS(th) -0.8 -1.6 -2.0 V VDS = VGS, ID = -1mA RDS (ON) ¾ 2 10 W VGS = -5V, ID = -0.100A gFS 0.05 ¾ ¾ S VDS = -25V, ID = -0.1A Input Capacitance Ciss ¾ ¾ 45 pF Output Capacitance Coss ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 12 pF Turn-On Delay Time tD(ON) ¾ 10 ¾ ns Turn-Off Delay Time tD(OFF) ¾ 18 ¾ ns OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS VDS = -25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Ordering Information Notes: (Note 6) Device Packaging Shipping BSS84V-7 SOT-563 3000/Tape & Reel 5. Short duration test pulse used to minimize self-heating effect. 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information (Note 7) K84 Notes: VDD = -30V, ID = -0.27A, RGEN = 50W, VGS = -10V K84 = Product Type Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September YM 7. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). Date Code Key Year 2005 2006 2007 2008 2009 Code S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30605 Rev. 7 - 2 2 of 4 www.diodes.com BSS84V -1.2 VGS = -10V 150 ID, DRAIN CURRENT (A) PD, POWER DISSIPATION (mW) 200 125 100 75 50 -1.0 VGS = -8V -0.8 VGS = -5V -0.6 -0.4 VGS = -3V 25 -0.2 0 0 25 75 50 125 100 0 175 150 0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature -4.5 -5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 Typical Output Characteristics 3.0 -1 2.5 ID, DRAIN CURRENT (A) VDS = -10V VGS = -5V 2.0 -0.1 1.5 VGS = -10V 1.0 -0.01 0.5 0 -0.001 -0.001 -1 0 -2 -3 -5 -4 -0.01 -0.1 -1 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current VGS, GATE-SOURCE VOLTAGE (V) Fig. 3 Typical Transfer Characteristics -1 8 IDR, REVERSE DRAIN CURRENT (A) NEW PRODUCT -1.4 7 6 ID = -65mA 5 ID = -130mA 4 3 2 1 -0.1 VGS = -10V VGS = -0V -0.01 -0.001 0 -2 0 -4 -6 -8 -10 VGS, GATE-SOURCE VOLTAGE (V) Fig. 5 Static Drain-Source On-Resistance vs. Gate-Source Voltage DS30605 Rev. 7 - 2 3 of 4 www.diodes.com 0 -0.5 -1.0 -1.5 VSD, BODY DIODE FORWARD VOLTAGE (V) Fig. 6 Reverse Drain Current vs. Body Diode Forward Voltage BSS84V NEW PRODUCT IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30605 Rev. 7 - 2 4 of 4 www.diodes.com BSS84V