Diodes BSS84V-7 Dual p-channel enhancement mode field effect transistor Datasheet

SPICE MODEL: BSS84V
BSS84V
NEW PRODUCT
Lead-free Green
DUAL P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
·
·
·
·
·
·
Low On-Resistance
Low Gate Threshold Voltage
A
Low Input Capacitance
SOT-563
Fast Switching Speed
Lead Free By Design/RoHS Compliant (Note 3)
B C
“Green” Device (Note 4)
Mechanical Data
·
·
·
·
·
·
·
·
D
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
M
K
Terminals: Finish ¾ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Min
Max
Typ
A
0.15
0.30
0.25
B
1.10
1.25
1.20
C
1.55
1.70
1.60
D
G
Case: SOT-563
Dim
H
L
Terminal Connections: See Diagram
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
K
0.56
0.60
0.60
L
0.10
0.30
0.20
M
0.10
0.18
¾
All Dimensions in mm
Marking Code (See Page 2): K84
Ordering & Date Code Information: See Page 2
D2
G1
S1
S2
G2
D1
Weight: 0.006 grams (approx.)
Maximum Ratings
@ TA = 25°C unless otherwise specified
Symbol
Value
Units
Drain-Source Voltage
Characteristic
VDSS
-50
V
Drain-Gate Voltage (Note 1)
VDGR
-50
V
Gate-Source Voltage
Continuous
VGSS
±20
V
Drain Current (Note 2)
Continuous
ID
-130
mA
Pd
150
mW
RqJA
833
°C/W
Tj, TSTG
-55 to +150
°C
Total Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Note:
1. R GS £ 20KW.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30605 Rev. 7 - 2
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BSS84V
ã Diodes Incorporated
NEW PRODUCT
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
-50
-75
¾
V
VGS = 0V, ID = -250mA
Zero Gate Voltage Drain Current
IDSS
¾
¾
¾
¾
¾
¾
-15
-60
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ = 25°C
VDS = -50V, VGS = 0V, TJ = 125°C
VDS = -25V, VGS = 0V, TJ = 25°C
Gate-Body Leakage
IGSS
¾
¾
±50
nA
VGS = ±20V, VDS = 0V
VGS(th)
-0.8
-1.6
-2.0
V
VDS = VGS, ID = -1mA
RDS (ON)
¾
2
10
W
VGS = -5V, ID = -0.100A
gFS
0.05
¾
¾
S
VDS = -25V, ID = -0.1A
Input Capacitance
Ciss
¾
¾
45
pF
Output Capacitance
Coss
¾
¾
25
pF
Reverse Transfer Capacitance
Crss
¾
¾
12
pF
Turn-On Delay Time
tD(ON)
¾
10
¾
ns
Turn-Off Delay Time
tD(OFF)
¾
18
¾
ns
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = -25V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Ordering Information
Notes:
(Note 6)
Device
Packaging
Shipping
BSS84V-7
SOT-563
3000/Tape & Reel
5. Short duration test pulse used to minimize self-heating effect.
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
(Note 7)
K84
Notes:
VDD = -30V, ID = -0.27A,
RGEN = 50W, VGS = -10V
K84 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
YM
7. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
Date Code Key
Year
2005
2006
2007
2008
2009
Code
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30605 Rev. 7 - 2
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BSS84V
-1.2
VGS = -10V
150
ID, DRAIN CURRENT (A)
PD, POWER DISSIPATION (mW)
200
125
100
75
50
-1.0
VGS = -8V
-0.8
VGS = -5V
-0.6
-0.4
VGS = -3V
25
-0.2
0
0
25
75
50
125
100
0
175
150
0
-0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
-4.5 -5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Typical Output Characteristics
3.0
-1
2.5
ID, DRAIN CURRENT (A)
VDS = -10V
VGS = -5V
2.0
-0.1
1.5
VGS = -10V
1.0
-0.01
0.5
0
-0.001
-0.001
-1
0
-2
-3
-5
-4
-0.01
-0.1
-1
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
vs. Drain Current
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 3 Typical Transfer Characteristics
-1
8
IDR, REVERSE DRAIN CURRENT (A)
NEW PRODUCT
-1.4
7
6
ID = -65mA
5
ID = -130mA
4
3
2
1
-0.1
VGS = -10V
VGS = -0V
-0.01
-0.001
0
-2
0
-4
-6
-8
-10
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 5 Static Drain-Source On-Resistance vs.
Gate-Source Voltage
DS30605 Rev. 7 - 2
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0
-0.5
-1.0
-1.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
Fig. 6 Reverse Drain Current vs.
Body Diode Forward Voltage
BSS84V
NEW PRODUCT
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
DS30605 Rev. 7 - 2
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BSS84V
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