Seme LAB BUX78A-220M Silicon planar epitaxial npn/pnp transistor Datasheet

SILICON PLANAR EPITAXIAL
NPN/PNP TRANSISTORS
BUX77A-220M
BUX78A-220M
•
High Power
•
Hermetic TO220 Isolated Metal Package
•
Ideally suited for Driver Circuits, Switching
and Amplifier Applications
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
BUX77A
NPN
BUX78A
PNP
100V
80V
6V
-100V
-80V
-6V
8A
2A
50W
0.29W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
RθJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
Units
3.5
°C/W
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Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
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Document Number 5339
Issue 4
Page 1 of 3
SILICON PLANAR EPITAXIAL
NPN/PNP TRANSISTORS
BUX77A-220M / BUX78A-220M
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) (1)
Symbols
Parameters
Test Conditions
IC = 50mA
IB = 0
80
IC = 2mA
VBE = 0
100
V(BR)EBO
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
IE = 1.0mA
IC = 0
ICEO
Collector Cut-Off Current
VCE = 60V
IB = 0
10
ICBO
Collector Cut-Off Current
VCB = 80V
IE = 0
0.5
TC = 150°C
150
IEBO
Emitter Cut-Off Current
VEB = 4V
IC = 0
0.5
IC = 0.5A
VCE = 5V
50
IC = 2A
VCE = 5V
50
IC = 5A
VCE = 5V
30
IC = 1.0A
VCE = 5V
(2)
V(BR)CEO
V(BR)CES
hFE
Forward-current transfer
ratio
(2)
TC = -40°C
(2)
VCE(sat)
VBE(sat)
(2)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Min.
Typ
Max.
Units
V
6
µA
250
25
IC = 5A
IB = 0.5A
1.0
IC = 5A
IB = 0.5A
1.3
IC = 0.5A
VCE = 5V
V
DYNAMIC CHARACTERISTICS
|hfe|
Small signal forward-current
transfer ratio
ton
Turn-On Time
toff
Turn-Off Time
1.5
f = 20MHz
IC = 5A
VCC = 40V
IB1 = 0.5A
IC = 5A
VCC = 40V
IB1 = - IB2 = 0.5A
0.3
0.4
µs
1.1
2.5
Notes
(1) For PNP (BUX78A) device, voltage and current values are negative
(2) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 5339
Issue 4
Page 2 of 3
SILICON PLANAR EPITAXIAL
NPN/PNP TRANSISTORS
BUX77A-220M / BUX78A-220M
MECHANICAL DATA
Dimensions in mm (inches)
4.83 (0.190)
5.33 (0.210)
0.64 (0.025)
0.89 (0.035)
3.56 (0.140)
Dia
3.81 (0.150)
10.41 (0.410)
10.92 (0.430)
13.21 (0.52)
13.72 (0.54)
13.21 (0.52)
13.72 (0.54)
10.92 (0.430)
10.41 (0.410)
2
3
12.70 (0.500)
14.73 (0.750)
1
0.89 (0.035)
Dia.
1.27 (0.050)
2.54 (0.100)
BSC
3.05 (0.120)
BSC
TO220M (TO-257AB)
Pin 1 - Base
Pin 2 - Collector
Pin 3 - Emitter
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 5339
Issue 4
Page 3 of 3
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