SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A-220M BUX78A-220M • High Power • Hermetic TO220 Isolated Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range BUX77A NPN BUX78A PNP 100V 80V 6V -100V -80V -6V 8A 2A 50W 0.29W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 3.5 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 5339 Issue 4 Page 1 of 3 SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A-220M / BUX78A-220M ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) (1) Symbols Parameters Test Conditions IC = 50mA IB = 0 80 IC = 2mA VBE = 0 100 V(BR)EBO Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IE = 1.0mA IC = 0 ICEO Collector Cut-Off Current VCE = 60V IB = 0 10 ICBO Collector Cut-Off Current VCB = 80V IE = 0 0.5 TC = 150°C 150 IEBO Emitter Cut-Off Current VEB = 4V IC = 0 0.5 IC = 0.5A VCE = 5V 50 IC = 2A VCE = 5V 50 IC = 5A VCE = 5V 30 IC = 1.0A VCE = 5V (2) V(BR)CEO V(BR)CES hFE Forward-current transfer ratio (2) TC = -40°C (2) VCE(sat) VBE(sat) (2) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Min. Typ Max. Units V 6 µA 250 25 IC = 5A IB = 0.5A 1.0 IC = 5A IB = 0.5A 1.3 IC = 0.5A VCE = 5V V DYNAMIC CHARACTERISTICS |hfe| Small signal forward-current transfer ratio ton Turn-On Time toff Turn-Off Time 1.5 f = 20MHz IC = 5A VCC = 40V IB1 = 0.5A IC = 5A VCC = 40V IB1 = - IB2 = 0.5A 0.3 0.4 µs 1.1 2.5 Notes (1) For PNP (BUX78A) device, voltage and current values are negative (2) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 5339 Issue 4 Page 2 of 3 SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A-220M / BUX78A-220M MECHANICAL DATA Dimensions in mm (inches) 4.83 (0.190) 5.33 (0.210) 0.64 (0.025) 0.89 (0.035) 3.56 (0.140) Dia 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.21 (0.52) 13.72 (0.54) 13.21 (0.52) 13.72 (0.54) 10.92 (0.430) 10.41 (0.410) 2 3 12.70 (0.500) 14.73 (0.750) 1 0.89 (0.035) Dia. 1.27 (0.050) 2.54 (0.100) BSC 3.05 (0.120) BSC TO220M (TO-257AB) Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 5339 Issue 4 Page 3 of 3