ISC BDT31A Isc silicon npn power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
BDT31/A/B/C
DESCRIPTION
·DC Current Gain -hFE = 25(Min)@ IC= 1.0A
·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A
80V(Min)- BDT31B; 100V(Min)- BDT31C
·Complement to Type BDT32/A/B/C
APPLICATIONS
·Designed for use in audio output stages and general amplifier
and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
VALUE
BDT31
80
BDT 31A
100
BDT 31B
120
BDT 31C
140
BDT31
40
BDT 31A
60
BDT 31B
80
BDT 31C
100
Collector-Base Voltage
UNIT
V
Collector-Emitter Voltage
V
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
5
A
IB
Base Current
1
A
PC
Collector Power Dissipation
TC=25℃
40
W
Tj
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Ttemperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
Rth j-a
Thermal Resistance,Junction to Ambient
isc Website:www.iscsemi.cn
MAX
UNIT
3.12
℃/W
70
℃/W
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
BDT31/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT31
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
MIN
TYP.
MAX
UNIT
40
BDT 31A
60
IC= 30mA; IB= 0
V
BDT 31B
80
BDT 31C
100
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.375A
1.2
V
VBE(on)
Base-Emitter On Voltage
IC= 3A ; VCE= 4V
1.8
V
ICES
Collector Cutoff Current
VCE= VCEOmax; VBE= 0
0.2
mA
ICEO
Collector Cutoff Current
0.1
mA
0.2
mA
B
BDT31/A
VCE= 30V; IB= 0
BDT31B/C
VCE= 60V; IB= 0
B
B
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
25
hFE-2
DC Current Gain
IC= 3A ; VCE= 4V
10
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 10V
3
fT
50
MHz
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
0.3
μs
1.0
μs
IC= 1.0A; IB1= -IB2= 0.1A
isc Website:www.iscsemi.cn
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