INCHANGE Semiconductor BU941Z isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining VoltageVCEO(SUS)= 400V(Min) ·High DC current gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current 1 A IBM Base Current-Peak 5 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.2 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor BU941Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.6 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10 A; IB= 250mA 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 8 A; IB= 100mA 2.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10 A; IB= 250mA 2.5 V ICES Collector Cutoff Current VCE= 500V;VBE= 0 VCE= 500V;VBE= 0;Tj=125℃ 0.1 0.5 mA ICEO Collector Cutoff Current VCE= 450V;IB= 0 VCE= 450V;IB= 0;Tj= 125℃ 0.1 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 20 mA hFE DC Current Gain IC= 5A ; VCE= 10V VECF C-E Diode Forward Voltage IF= 10A 2.5 V 400 UNIT V 300 Pulse test：Pulse width≤300us,duty cycle ≤1.5% isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark