26–33 GHz GaAs MMIC Double Balanced Down Converter Mixer AM028D1-00 Chip Outline Features ■ Low Conversion Loss, 6.5 dB 2.155 1.582 OHMIC ADDED 9-4-92 ■ High LO to RF Isolation, 27 dB 29-4-9 DEDDA CIMHO ■ Insensitive to LO Power Variations ■ No DC Bias Required 1.086 Description 50 OHMS 0.591 SMHO 05 0.085 2.320 1.166 0.085 0.000 0.000 Alpha’s double balanced GaAs Schottky diode mixer has a typical conversion loss of 6.5 dB at an LO power level as low as 11 dBm over the band 26–33 GHz. The chip uses Alpha’s proven Schottky diode technology, and is based upon MBE layers for the highest uniformity and repeatability. The diodes employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. All chips are screened for DC diode parameters and lot samples are RF measured to guarantee performance. Dimensions indicated in mm. All pads are ≥ 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Value Operating Temperature -55°C to +125°C Storage Temperature -65°C to +150°C Total Input Power (RF + LO) 23 dBm Electrical Specifications at 25°C Parameter Symbol RF and LO Frequency Range FRF, FLO Min. Typ.2 Max. 26–33 Unit GHz IF Frequency Range FIF 0–2 GHz LO Power Level PLO 11–21 dBm Conversion Loss1 LC 6.5 dB RLRF, RLLO 20 dB LO to RF Isolation1 ISOLO-RF 27 dB LO to IF Isolation1 ISOLO-IF 30 dB P1 dB 12 RF and LO Return Loss1 RF Input 1 dB Compression Point1 Two Parallel Diode Series Resistance dBm 1.5 Ω 1. Not measured on a 100% basis. 2. Typical represents the median parameter value across the specified frequency range for the median chip. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 2/00A 1 26–33 GHz GaAs MMIC Double Balanced Down Converter Mixer AM028D1-00 Typical Performance Data 50 Conversion Loss (dB) 10 30 LO to RF Isolation 20 8 LO Return Loss 10 6 Conversion Loss LO to IF Isolation 0 4 7 9 11 13 15 17 40 12 LO to RF Isolation 30 10 20 8 LO Return Loss 10 6 Conversion Loss 4 25 19 26 LO Power (dBm) 28 29 30 31 0 32 33 34 LO Frequency (GHz) Performance vs. LO Power FRF = 28 GHz, FLO = 27 GHz, PRF = -10 dBm Performance vs. LO Frequency FRF = FLO + 1 GHz, PLO = 12 dBm Circuit Schematic 14 Conversion Loss (dB) 27 Return Loss & Isolation (dB) 40 12 50 14 Return Loss & Isolation (dB) LO to IF Isolation Conversion Loss (dB) 14 90˚ Phase Shifter/Splitter 12 10 RF LO 8 IF 6 4 0 1 2 3 4 5 6 7 8 9 10 IF Frequency (GHz) Performance vs. IF Frequency FRF = 28 GHz, FLO = FRF + FIF, PLO = 12 dBm Wire Bonding Configurations 50 OHMS LO SMHO 05 IF Single IF bond configuration. 2 RF 29-4-9 DEDDA CIMHO LO OHMIC ADDED 9-4-92 29-4-9 DEDDA CIMHO OHMIC ADDED 9-4-92 RF 50 OHMS IF Requires two IF bonds. LO to IF isolation is degraded by 7 dB for this configuration. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 2/00A SMHO 05