BCR8PM-12L Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C) REJ03G0461-0200 Rev.2.00 Nov.08.2004 Features • Viso : 2000 V • Insulated Type • Planar Passivation Type • IT (RMS) : 8 A • VDRM : 600 V • IFGTI, IRGTI, IRGTIII : 30 mA (20 mA)Note5 Outline TO-220F 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 2 3 Applications Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, and carpet, solenoid driver, small motor control, copying machine, electric tool, electric heater control, and other general purpose control applications Warning 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum junction temperature of 125°C will be supplied. Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.2.00, Nov.08.2004, page 1 of 7 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V BCR8PM-12L (The product guaranteed maximum junction temperature of 150°C) Parameter RMS on-state current Symbol IT (RMS) Ratings 8 Unit A Surge on-state current ITSM 80 A I2 t 26 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 – 40 to +150 – 40 to +150 2.0 2000 W W V A °C °C g V Symbol Min. Typ. Max. Unit IDRM VTM — — — — 2.0 1.6 mA V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc = 113°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Test conditions Tj = 150°C, VDRM applied Tc = 25°C, ITM = 12 A, Instantaneous measurement Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger currentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 30Note5 30Note5 30Note5 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω VGD 0.2/0.1 — — V Rth (j-c) — — 3.7 °C/W Tj = 125°C/150°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 10/1 — — V/µs Tj = 125°C/150°C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. 3. 4. 5. Measurement using the gate trigger characteristics measurement circuit. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = – 4.0 A/ms 3. Peak off-state voltage VD = 400 V Rev.2.00, Nov.08.2004, page 2 of 7 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR8PM-12L (The product guaranteed maximum junction temperature of 150°C) Performance Curves Maximum On-State Characteristics 3 2 Tj = 150°C 1 10 7 5 3 2 Tj = 25°C 100 7 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 50 40 30 20 10 0 0 10 2 3 5 7 101 2 3 5 7 102 Gate Trigger Current vs. Junction Temperature PG(AV) = 0.5W PGM = 5W IGM = 2A VGT = 1.5V –1 7 IFGT I IRGT I, IRGT III VGD = 0.1V 5 1 2 3 10 2 3 5 710 2 3 5 710 2 3 5 7104 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 60 Gate Characteristics (I, II and III) 103 7 5 3 2 102 7 5 Typical Example IRGT III IRGT I, IFGT I 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 Typical Example 3 2 2 10 7 5 3 2 1 10 –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Rev.2.00, 80 70 Conduction Time (Cycles at 60Hz) 100 7 5 3 2 10 90 On-State Voltage (V) 3 2 VGM = 10V 101 7 5 3 2 Surge On-State Current (A) 100 Nov.08.2004, page 3 of 7 Transient Thermal Impedance (°C/W) On-State Current (A) 102 7 5 Rated Surge On-State Current 102 2 3 5 7103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 –1 0 1 2 10 2 3 5 710 2 3 5 710 2 3 5 710 Conduction Time (Cycles at 60Hz) BCR8PM-12L (The product guaranteed maximum junction temperature of 150°C) No Fins 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105 12 360° Conduction Resistive, 10 inductive loads 8 6 4 2 0 2 4 6 8 10 12 14 16 RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current Curves apply regardless of conduction angle 140 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 2 4 6 8 160 Ambient Temperature (°C) Case Temperature (°C) 14 Conduction Time (Cycles at 60Hz) 0 0 120 120 t2.3 120 100 100 t2.3 100 60 60 t2.3 80 60 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 40 20 0 0 10 12 14 16 All fins are black painted aluminum and greased 140 2 4 6 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Ambient Temperature (°C) 16 On-State Power Dissipation (W) 10 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 –1 10 1 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) Rev.2.00, Maximum On-State Power Dissipation 3 Nov.08.2004, page 4 of 7 3.0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 –1 10 Typical Example –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) BCR8PM-12L (The product guaranteed maximum junction temperature of 150°C) 3 103 Typical Example Latching Current (mA) 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120140 160 10 7 5 3 2 Distribution 102 7 5 3 2 T2+, G– Typical Example 1 10 7 5 3 T +, G+ 2 2– – Typical Example T2 , G 0 10 –40 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 125°C) 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40–20 0 20 40 60 80 100 120 140 160 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Junction Temperature (°C) 160 Typical Example Tj = 125°C 140 120 100 80 60 III Quadrant 40 20 I Quadrant 0 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 150°C) Commutation Characteristics (Tj = 125°C) 160 140 Typical Example Tj = 150°C 120 100 80 60 40 III Quadrant 20 I Quadrant 0 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 Rate of Rise of Off-State Voltage (V/µs) Rev.2.00, Latching Current vs. Junction Temperature Nov.08.2004, page 5 of 7 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 Minimum Characteristics 3 2 0 Value 10 7 0 10 Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz I Quadrant III Quadrant 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) BCR8PM-12L (The product guaranteed maximum junction temperature of 150°C) Gate Trigger Current vs. Gate Current Pulse Width Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Commutation Characteristics (Tj = 150°C) Typical Example Tj = 150°C IT = 4A τ = 500µs VD = 200V f = 3Hz III Quadrant I Quadrant 3 2 Minimum Characteristics Value 0 10 7 0 10 5 7 101 2 3 2 3 5 7 102 3 10 7 5 Typical Example IFGT I IRGT I 3 2 IRGT III 2 10 7 5 3 2 101 0 10 5 7 101 2 3 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac 6Ω 6Ω Load C1 A 6V 330Ω V Test Procedure I V Test Procedure II 6Ω A 6V V 330Ω Test Procedure III Rev.2.00, Nov.08.2004, page 6 of 7 R1 A 6V 330Ω C0 C1 = 0.1 to 0.47µF R1 = 47 to 100Ω R0 C0 = 0.1µF R0 = 100Ω BCR8PM-12L (The product guaranteed maximum junction temperature of 150°C) Package Dimensions TO-220F EIAJ Package Code JEDEC Code Conforms Mass (g) (reference value) Lead Material 2.0 Cu alloy 10.5 max 2.8 17 8.5 5.0 1.2 5.2 3.6 φ 3.2 ± 0.2 13.5 min 1.3 max 0.8 0.5 2.54 2.6 Symbol 4.5 2.54 Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 100 Type name +B Lead form Plastic Magazine (Tube) 50 Type name +B – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00, Nov.08.2004, page 7 of 7 Standard order code example BCR8PM-12LB BCR8PM-12LB-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. 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