ARF448A ARF448B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 140W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. Specified 150 Volt, 40.68 MHz Characteristics: ¥ ¥ ¥ Low Cost Common Source RF Package. Output Power = 140 Watts. Very High Breakdown for Improved Ruggedness. Gain = 15dB (Class C) Low Thermal Resistance. Efficiency = 75% Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter ARF448A/448B VDSS Drain-Source Voltage 450 VDGO Drain-Gate Voltage 450 ID Continuous Drain Current @ TC = 25°C UNIT Volts 15 Amps VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25°C 230 Watts Junction to Case 0.55 °C/W RqJC TJ,TSTG TL -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 mA) 450 VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH) 1 TYP MAX (I D(ON) = 7.5A, VGS = 10V) 3 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 Forward Transconductance (VDS = 25V, ID = 7.5A) 5 Gate Threshold Voltage (VDS = VGS, ID = 50mA) 2 8.5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT Volts mA nA mhos 5 Volts 7-2003 BVDSS Characteristic / Test Conditions 050-4908 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol ARF448A/448B Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf MIN TYP MAX 1400 1700 150 200 f = 1 MHz 65 100 VGS = 15V 7 15 VDD = 0.5 VDSS 5 10 ID = ID[Cont.] @ 25°C 23 40 RG = 1.6W 12 25 MAX VGS = 0V VDS = 150V Rise Time Turn-off Delay Time Fall Time UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS h y Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 40.68 MHz 13 15 dB 70 75 % VGS = 0V Drain Efficiency Electrical Ruggedness VSWR 20:1 VDD = 150V Pout = 140W UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380 mS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 30 3000 Class C VDD = 150V 25 CAPACITANCE (pf) Pout = 250W 20 GAIN (dB) Ciss 15 10 20 30 40 50 60 65 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency Crss 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 70 TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250mSEC. PULSE TEST @ <0.5 % DUTY CYCLE 15 10 5 Coss 50 20 TJ = +125°C TJ = -55°C TJ = +25°C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 050-4908 Rev B 25 500 100 5 0 10 1000 10mS OPERATION HERE LIMITED BY RDS (ON) 10 100mS 1mS 5 10mS 1 .5 .1 100mS TC =+25°C TJ =+150°C SINGLE PULSE 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area DC ARF448A/448B 40 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.2 1.1 1.0 0.9 0.8 0.7 f = 40.68 MHz 180 120 60 0 0 2 4 6 8 10 PIN, POWER IN (WATTS) Figure 7, Typical Power Out vs Power In 6.5V 20 6V 5.5V 10 5V 0 GPS, COMMON SOURCE AMPLIFIER GAIN (dB) POUT, POWER OUT (WATTS) 240 Class C VDD = 150V 30 4.5V 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 5, Typical Threshold Voltage vs Temperature 300 VGS=8, 10 & 15V 1 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 17 Class C VDD = 150V 16 f = 40.68 MHz 15 14 13 0 60 120 180 240 300 POUT, POWER OUT (WATTS) Figure 8, Typical Common Source Amplifier Gain vs Power Out 0.6 0.1 0.2 0.1 0.05 0.05 Note: 0.02 0.01 PDM 0.01 t1 SINGLE PULSE 0.005 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZqJC + TC 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 Table 1 - Typical Class C Large Signal Input-Output Impedance Freq. (MHz) 2.0 13.5 27.0 40.0 65.0 Z in (W) 20.90 - j 9.2 2.40 - j 6.8 0.57 - j 2.6 0.31 - j 0.5 0.44 + j 1.9 Z OL (W) 56.00 - j 06.0 37.00 - j 26.0 18.00 - j 25.0 9.90 - j 19.2 4.35 - j 11.4 Z in - gate shunted by 25W Z OL - conjugate of optimum load impedance for 250W at 150V 7-2003 0.001 10-5 050-4908 Rev C Z JC, THERMAL IMPEDANCE (°C/W) q D=0.5 ARF448A/448B 40.68 MHz Test Circuit Parts List C1 -- 1800pF 100V chip C2-C4 -- Arco 463 Mica Trimmer C5-C7 -- 1nF 500V COG chip L1 -- 1" #16 AWG into hairpin ~9.6nH L2 -- 6t #16 AWG .25" ID ~165nH L3 -- 10t #18 AWG .25" ID ~0.47µH L4 -- VK200-4B ferrite choke ~3µH R1 -- 25 Ohm 1/2W Carbon T1 -- 9:1 Broadband Transformer RF Input L4 + C6 - C7 150V L3 C5 L2 L1 C4 RF Output C3 DUT T1 C1 C2 R1 40.48 MHz Test Circuit TO-247 Package Outline Top View 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC Source 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 7-2003 0.40 (.016) 0.79 (.031) 050-4908 Rev C 5.38 (.212) 6.20 (.244) 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) Dimensions in Millimeters and (Inches) NOTE: The ARF446 and ARF447 comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) Device ARF448A ARF448B Gate Drain Source Source Drain Gate 5.45 (.215) BSC 2-Plcs. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.