MOSFET SMD Type N-Channel MOSFET AO6420-HF (KO6420-HF) ( SOT-23-6 ) Unit: mm +0.1 0.4 -0.1 6 5 4 1 2 3 ● RDS(ON) ＜ 60mΩ (VGS = 10V) ● RDS(ON) ＜ 75mΩ (VGS = 4.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a 0.55 +0.2 1.6 -0.1 ● ID =4.2 A (VGS = 10V) +0.2 2.8 -0.1 ● VDS (V) = 60V 0.4 ■ Features +0.02 0.15 -0.02 +0.01 -0.01 Pb−Free Lead Finish +0.1 1.1 -0.1 +0.2 -0.1 0-0.1 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain +0.1 0.68 -0.1 D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range ID IDM TA=25℃ TA=70℃ t ≤ 10s Steady-State PD RthJA Unit V 4.2 3.4 A 20 2 1.28 W 62.5 110 RthJL 40 TJ 150 Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO6420-HF (KO6420-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current Gate Threshold Voltage Test Conditions Min Typ ID=250μA, VGS=0V VDS=60V, VGS=0V 1 VDS=60V, VGS=0V, TJ=55℃ 5 IGSS VDS=0V, VGS=±20V VGS(th) VDS=VGS , ID=250 uA RDS(On) VGS=10V, ID=4.2A 1 Forward Transconductance ID(ON) VGS=10V, VDS=5V gFS VDS=5V, ID=4.2A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=4.2A 2 9.5 11.5 4.3 5.5 1.6 td(on) 5.1 VGS=10V, VDS=30V, RL=7Ω,RG=3Ω tf trr Qrr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD IF= 4.2A, dI/dt= 100A/us IS=1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking Marking DN** F www.kexin.com.cn pF 1.65 Turn-On DelayTime Body Diode Reverse Recovery Time 540 25 2.2 Body Diode Reverse Recovery Charge S 60 Qgd Turn-Off Fall Time 2 13 450 VGS=0V, VDS=30V, f=1MHz mΩ A Gate Drain Charge tr V 75 Qgs td(off) nA 3 20 Gate Source Charge Turn-Off DelayTime ±100 85 TJ=125℃ Qg Turn-On Rise Time uA 60 VGS=4.5V, ID=3A On State Drain Current Unit V VGS=10V, ID=4.2A Static Drain-Source On-Resistance Max 60 Ω nC 7 2.6 4 15.9 20 2 3 25.1 35 28.7 ns nC 3 A 1 V MOSFET SMD Type N-Channel MOSFET AO6420-HF (KO6420-HF) ■ Typical Characterisitics 20 15 10.0V 5.0V 10 4.5V 10 125°C ID(A) ID (A) 15 4.0V 5 5 25°C VGS=3.5V 0 0 1 2 3 4 0 5 2 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics 100 2 80 Normalized On-Resistance 90 RDS(ON) (mΩ Ω) VDS=5V VGS=4.5V 70 60 50 VGS=10V 40 30 1.6 1.4 5 10 15 VGS=4.5V ID=3A 1.2 1 20 0 VGS=10 ID=4.2A 1.8 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 160 1.0E+01 140 1.0E+00 120 1.0E-01 125°C 100 IS (A) RDS(ON) (mΩ Ω) ID=4.2A 125°C 1.0E-02 25°C 1.0E-03 80 25°C 60 1.0E-04 1.0E-05 40 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO6420-HF (KO6420-HF) ■ Typical Characterisitics 10 800 VDS=30V ID= 4.2A Capacitance (pF) VGS (Volts) 8 6 4 2 600 Ciss 400 Coss 200 Crss 0 0 0 2 4 6 8 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 30 40 10.0 10µs RDS(ON) limited 1.0 0.1 100µs 1ms 10ms 0.1s 1s DC TJ(Max)=150°C TA=25°C 10s 0.0 0.01 0.1 1 VDS (Volts) 10 100 . Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 40 50 60 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W TJ(Max)=150°C TA=25°C 30 Power (W) ID (Amps) 20 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 Zθ JA Normalized Transient Thermal Resistance 10 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 4 0.0001 www.kexin.com.cn 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000