AO4260 60V N-Channel MOSFET General Description Product Summary The AO4260 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 60V 18A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 5.2mΩ RDS(ON) (at VGS =4.5V) < 6.3mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Units V ±20 V 18 ID TA=70°C Maximum 60 14 A Pulsed Drain Current C IDM Avalanche Current C IAS 65 A Avalanche energy L=0.1mH C TA=25°C EAS 211 mJ Power Dissipation B Junction and Storage Temperature Range Rev 1: Mar. 2012 3.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 130 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4260 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V VDS=VGS, ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 130 ±100 nA 1.8 2.4 V 4.3 5.2 6.9 8.4 VGS=4.5V, ID=16A 5 6.3 mΩ 70 1 V 4.5 A VGS=10V, ID=18A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=18A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance A 0.68 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance µA 5 Gate Threshold Voltage Units V 1 VGS(th) Coss Max 60 VDS=60V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=30V, f=1MHz mΩ S 4940 pF 445 pF 32 pF 0.9 1.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 71 100 nC Qg(4.5V) Total Gate Charge 31 45 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=18A 0.4 12.5 nC 8.5 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=18A, dI/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs 96 VGS=10V, VDS=30V, RL=1.67Ω, RGEN=3Ω 8.5 ns 8.5 ns 50 ns 15.5 ns 22 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Mar. 2012 www.aosmd.com Page 2 of 6 AO4260 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 10V VDS=5V 3.5V 100 4V 80 4.5V 80 ID(A) ID (A) 60 3V 60 125°C 40 40 20 20 25°C VGS=2.5V 0 0 0 1 2 3 4 1 5 8 2 2.5 3 3.5 4 Normalized On-Resistance 2 6 RDS(ON) (mΩ Ω) 1.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 4 VGS=10V 2 1.8 VGS=10V ID=18A 1.6 17 5 2 VGS=4.5V10 1.4 1.2 ID=16A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 12 1.0E+02 ID=18A 1.0E+01 10 40 125°C 1.0E+00 IS (A) RDS(ON) (mΩ Ω) 8 6 4 125°C 1.0E-01 1.0E-02 1.0E-03 25°C 25°C 2 1.0E-04 0 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: Mar. 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4260 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=30V ID=18A Ciss 5000 Capacitance (pF) VGS (Volts) 8 6 4 2 4000 3000 Coss 2000 1000 Crss 0 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 70 80 0 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 60 1000.0 TA=25°C 100.0 TA=100°C RDS(ON) limited 100 ID (Amps) IAR (A) Peak Avalanche Current 1000 10 TA=150°C TA=125°C 10 10µs 10.0 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 10s DC 0.0 1 1 0.01 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0.1 1 10 VDS (Volts) 100 1000 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 1: Mar. 2012 www.aosmd.com Page 4 of 6 AO4260 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: Mar. 2012 www.aosmd.com Page 5 of 6 AO4260 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 1: Mar. 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6