AP3N2R8P
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
30V
RDS(ON)
2.8mΩ
G
S
Description
AP4604 series
AP3N2R8
seriesare
arefrom
fromAdvanced
Advanced Power
Power innovated
innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal
resistance and low package cost contribute to the worldwide
popular package.
G
D
TO-220(P)
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
.
Parameter
Symbol
4
Drain Current, VGS @ 10V (Silicon Limited)
ID@TC=25℃
Drain Current, VGS @ 10V
ID@TC=100℃
Drain Current, VGS @ 10V
4
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
3
Rating
Units
30
V
+20
V
158
A
130
A
112
A
400
A
125
W
2.4
W
45
mJ
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
201702092
AP3N2R8P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=60A
-
-
2.8
mΩ
VGS=4.5V, ID=30A
-
-
4
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=5V, ID=60A
-
200
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=30A
-
66
105.6
nC
Qgs
Gate-Source Charge
VDS=24V
-
13.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
30
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
12
-
ns
tr
Rise Time
ID=40A
-
63
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
73
-
ns
-
ns
tf
Fall Time
VGS=10V
-
110
Ciss
Input Capacitance
VGS=0V
-
5800 9280
pF
Coss
Output Capacitance
VDS=15V
Crss
Rg
-
1100
-
pF
Reverse Transfer Capacitance
.
f=1.0MHz
-
510
-
pF
Gate Resistance
f=1.0MHz
-
1.1
2.2
Ω
Min.
Typ.
IS=60A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=40A, VGS=0V,
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
6
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
o
3.Starting Tj=25 C , VDD=30V , L=0.1mH , RG=25Ω
4.Package limitation current is 130A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3N2R8P
400
200
T C =175 o C
10V
7.0V
6.0V
5.0V
V G =4.0V
300
10V
7.0V
6.0V
5.0V
V G =4.0V
160
ID , Drain Current (A)
ID , Drain Current (A)
T C = 25 o C
200
120
80
100
40
0
0
0
1
2
3
0
4
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
2.5
I D =30A
I D =60A
V G =10V
T C =25 o C
2.3
2.1
.
1.9
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
1.2
0.8
1.7
0.4
1.5
2
4
6
8
-100
10
-50
0
50
100
150
200
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
100
I D =1mA
Normalized VGS(th)
1.6
IS(A)
10
T j =175 o C
T j =25 o C
1.2
0.8
1
0.4
0.1
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
200
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP3N2R8P
f=1.0MHz
10000
I D =30A
V DS =24V
8
8000
C (pF)
VGS , Gate to Source Voltage (V)
10
6
6000
4
4000
2
2000
C iss
C oss
C rss
0
0
0
40
80
120
1
160
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
33
37
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
ID (A)
100
10
100us
1
1ms
.
10ms
0.1
T C =25 o C
Single Pulse
DC
0.01
Normalized Thermal Response (Rthjc)
Duty factor=0.5
Operation in this area
limited by RDS(ON)
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
200
VG
ID , Drain Current (A)
160
QG
Limited by package
4.5V
120
QGS
QGD
80
40
Charge
Q
0
25
75
125
T C , Case Temperature (
175
o
C)
Fig 11. Drain Current v.s. Case
Temperature
Fig 12. Gate Charge Circuit
4
AP3N2R8P
20
160
o
T j =25 C
PD, Power Dissipation(W)
RDS(ON) (mΩ)
16
12
8
120
80
40
4
4.5V
V GS =10V
0
0
0
40
80
120
0
160
50
100
150
200
T C , Case Temperature( o C)
I D , Drain Current (A)
Fig 13. Typ. Drain-Source on State
Resistance
Fig 14. Total Power Dissipation
200
V DS =5V
ID , Drain Current (A)
160
120
.
80
T j =175 o C
T j =25 o C
40
T j = -55 o C
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 15. Transfer Characteristics
5
AP3N2R8P
MARKING INFORMATION
Part Number
3N2R8
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6