Mitsubishi CM900DUC-24NF High power switching use insulated type Datasheet

CM900DUC-24NF
Mega Power
Dual IGBTMOD™
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
900 Amperes/1200 Volts
A
D
P
(8 PLACES)
U
N
G
H H
L
S
W
K
C2E1
C2
C1
G2
E1
E2
G1
X J
F
BB
Y CB
Z
CC
F
J
E2
C1
U
V
E
H H H H H H
G
G
AA
LABEL
T
G2
C2
C2E1
L
R (9 PLACES) M
E2
Di1
Tr2
E2
C1
Tr1
Di2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
Inches
A
5.91
Millimeters
Dimensions
Inches
Millimeters
150.0
M
0.075±0.008
1.9±0.2
B
5.10
129.5
N
0.47
12.0
C
1.67±0.01
42.5±0.25
P
0.26
6.5
D
5.41±0.01
137.5±0.25
R
M6 Metric
M6
E
6.54
166.0
S
0.08
2.0
F
2.91±0.01
74.0±0.25
T
0.99
25.1
G
1.65
42.0
U
0.62
15.7
Description:
Powerex Mega Power Dual (MPD)
Modules are designed for use in
switching applications. Each
module consists of two IGBT
Transistors having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heatsinking
£ RoHS Compliant
Applications:
£ High Power DC Power Supply
£ Large DC Motor Drives
£ Utility Interface Inverters
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM900DUC-24NF
is a 1200V (VCES), 900 Ampere
Dual IGBTMOD Power
Module.
H
0.55
14.0
V
0.71
18.0
J
1.50±0.01
38.0±0.25
W
0.75
19.0
0.16
4.0
X
0.43
11.0
Y
0.83
21.0
Z
0.41
10.5
Type
Current Rating
Amperes
VCES
Volts (x 50)
AA
0.22
5.5
CM
900
24
K
L
1.36 +0.04/-0.02 34.6 +1.0/-0.5
Housing Type (J.S.T. MFG. CO. LTD)
BB = VHR-2N
CC = VHR-5N
01/10 Rev. 0
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM900DUC-24NF
Mega Power Dual IGBTMOD™
900 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Symbol
CM900DUC-24NF
Units
Tj
-40 to 150
°C
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
Collector Current DC (TC = 96°C)*1
IC
900
Amperes
Peak Collector Current (Pulse, Tj ≤ 150°C)*4
ICM
1800
Amperes
Emitter Current (TC = 25°C)
IE*3
900
Amperes
IEM*3
1800
Amperes
PC
5900
Watts
Mounting Torque, M6 Mounting Screws
–
40
in-lb (max.)
Mounting Torque, M6 Main Terminal Screw
–
40
in-lb (max.)
–
1450
Grams
Viso
2500
Volts
Peak Emitter Current (Pulse)*4
*1
Maximum Collector Dissipation (Tj < 150°C, TC = 25°C)
Weight (Typical)
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*1 Case temperatureTC and heatsink temperature (Tf) measured point is just under the chips.
*3 IE, IEM, VEC, IFSM, I2t, trr, Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
2
01/10 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM900DUC-24NF
Mega Power Dual IGBTMOD™
900 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Collector-Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage (Chip)
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
–
–
1
mA
VGE(th)
IC = 90mA, VCE = 10V
6
7
8
Volts
IGES
VGE = VGES, VCE = 0V
–
–
1.0
µA
VCE(sat)
IC = 900A, VGE = 15V, Tj = 25°C*6
–
1.8
2.5
Volts
IC = 900A, VGE = 15V, Tj = 125°C*6
–
2.0
–
Volts
IC = 900A, Terminal-Chip
–
0.286
–
mΩ
–
–
140
nF
VCE = 10V, VGE = 0V
–
–
16
nF
–
–
3
nF
–
4800
–
nC
(Without Lead Resistance)
Module Lead Resistance
Test Conditions
R(lead)
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Total Gate Charge
QG
VCC = 600V, IC = 900A, VGE = 15V
td(on)
VCC = 600V, IC = 900A,
–
–
600
ns
tr
VGE1 = VGE2 = 15V,
–
–
200
ns
td(off)
RG = 0.35Ω, Inductive Load
–
–
800
ns
tf
Switching Operation
–
–
300
ns
Reverse Recovery Time
trr*3
IE = 900A
Reverse Recovery Charge
Qrr*3
Emitter-Collector Voltage (Chip)
VEC*3
Inductive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
IE = 900A, VGE = 0V*6
–
–
500
ns
–
50
–
µC
–
–
3.2
Volts
0.35
–
2.2
Ω
(Without Lead resistance)
External Gate Resistance
RG
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Thermal Resistance, Junction to Case*1
Rth(j-c)Q
Per IGBT (1/2 Module)
–
–
0.021
*1
Rth(j-c)D
Per Clamp Diode (1/2 Module)
–
–
0.034
°C/W
Rth(c-f)
Thermal Grease Applied (1/2 Module)
–
0.012
–
°C/W
Thermal Resistance, Junction to Case
Contact Thermal Resistance*1
Units
°C/W
*1 Case temperatureTC and heatsink temperature (Tf) measured point is just under the chips.
*3 IE, IEM, VEC, IFSM, I2t, trr, Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible teperature rise.
01/10 Rev. 0
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM900DUC-24NF
Mega Power Dual IGBTMOD™
900 Amperes/1200 Volts
VGE = 20V
15
13
1400
1800
Tj = 25°C
12
1200
1000
11
800
600
10
400
200
0
9
8
0
2
4
6
8
1200
1000
800
600
400
200
0
0
8
12
16
4
3
2
1
0
20
0
400
800
1200
1600
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
104
103
6
IC = 900A
IC = 360A
IC = 1800A
2
0
4
8
12
16
Tj = 25°C
Tj = 125°C
102
0.5 1.0
20
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
tf
td(on)
COLLECTOR CURRENT, IC, (AMPERES)
103
SWITCHING TIME, (ns)
VCC = 600V
VGE = ±15V
RG = 0.35Ω
Tj = 125°C
Inductive Load
102
3.5
Cres
100
10-1
10-1
4.0
103
tr
102
VCC = 600V
VGE = ±15V
IC = 900A
Tj = 125°C
Inductive Load
100
GATE RESISTANCE, RG, (Ω)
101
102
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
tf
101
10-1
100
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
td(off)
td(on)
102
101
101
2.5 3.0
Coes
101
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
tr
2.0
Cies
102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
103
1.5
101
REVERSE RECOVERY TIME, trr, (ns)
4
103
CAPACITANCE, Cies, Coes, Cres, (nF)
8
2000
VGE = 0V
Tj = 25°C
0
SWITCHING TIME, (ns)
4
VGE = 15V
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
1400
10
10
4
5
VCE = 10V
Tj = 25°C
Tj = 125°C
1600
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
1600
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
1800
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
VCC = 600V
VGE = ±15V
RG = 0.35Ω
Tj = 25°C
Inductive Load
103
Irr
trr
102
101
102
102
101
104
103
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT, IE, (AMPERES)
01/10 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
16
VCC = 400V
10-2
10-1
100
8
10-2
4
Single Pulse
TC = 25°C
Per Unit Base
Rth(j-c') =
0.021°C/W
(IGBT)
Rth(j-c') =
0.034°C/W
(Clamp)
10-3
103
10-5
10-4
102
VCC = 600V
VGE = ±15V
Tj = 125°C
RG = 0.35Ω
Eon
Eoff
Inductive Load
101
101
10-3
102
GATE CHARGE, QG, (nC)
TIME, (s)
COLLECTOR CURRENT, IC, (AMPERES)
REVERSE RECOVERY ENERGY VS.
FORWARD CURRENT
(TYPICAL)
SWITCHING ENERGY VS.
EXTERNAL GATE RESISTANCE
(TYPICAL)
REVERSE RECOVERY ENERGY VS.
EXTERNAL GATE RESISTANCE
(TYPICAL)
103
VCC = 600V
VGE = ±15V
Tj = 125°C
RG = 0.35Ω
Inductive Load
102
101
101
102
EMITTER CURRENT, IE, (AMPERES)
01/10 Rev. 0
103
103
102
101
10-1
VCC = 600V
VGE = ±15V
Tj = 125°C
IC = 900A
Eon
Eoff
Inductive Load
100
GATE RESISTANCE, RG, (Ω)
101
SWITCHING LOSS, Err, (mJ/PULSE)
103
1000 2000 3000 4000 5000 6000 7000
0
SWITCHING LOSS VS. COLLECTOR CURRENT
(TYPICAL)
101
10-1
VCC = 600V
12
0
SWITCHING LOSS, Err, (mJ/PULSE)
IC = 900A
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20
-3
10
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & CLAMP DIODE)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
GATE CHARGE, VGE
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
CM900DUC-24NF
Mega Power Dual IGBTMOD™
900 Amperes/1200 Volts
103
VCC = 600V
VGE = ±15V
Tj = 125°C
IC = 900A
Inductive Load
102
101
10-1
100
101
GATE RESISTANCE, RG, (Ω)
5
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