Transient Voltage Suppressors Array for ESD Protection ESDXXV08S-6L Series Description SO-08 The ESDXXV08S-6L is in an SO-08 package and may be used to protect two high-speed line pairs. The “flow-thru” design minimizes trace inductance and reduces voltage overshoot associated with ESD events. The low clamping voltage of the ESDXXV08S-6L minimizes the stress on the protected IC. Feature Functional Diagram u 300 Watts Peak Pulse Power per Line (tp=8/20μs) u Protects Four Six I/O Lines u Low Operating Voltage u Low Clamping Voltage u RoHS Compliant u IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) u IEC61000-4-4 (EFT) 40A (5/50ηs) Applications u Communication Lines u LAN/WAN Equipment u T3/E3 secondary IC Side Protection u HDSL, SDSL secondary IC Side Protection u Servers u Microcontroller Input Protection u Base Stations u Instrumentation Mechanical Characteristics u JEDEC SO-08 Package u Molding Compound Flammability Rating : UL 94V-0 u Weight 70 Milligrams (Approximate) u Quantity Per Reel : 500pcs u Reel Size : 7 inch u Lead Finish : Lead Free Mechanical Characteristics Symbol Parameter Value Units 300 W PPP Peak Pulse Power (tp=8/20μs waveform) TL Lead Soldering Temperature 260 (10sec) ºC TSTG Storage Temperature Range -55 to +150 ºC Operating Temperature Range -55 to +150 ºC TJ Air Discharge ±15 Contact Discharge ±8 IEC61000-4-2 (ESD) IEC61000-4-4 (EFT) 40 UN Semiconductor Co., Ltd. Revision January 06, 2014 KV A www.unsemi.com.tw 1/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors Array for ESD Protection ESDXXV08S-6L Series Electrical Characteristics (@ 25℃ Unless Otherwise Specified ) Part Number Device Marking VRWM (V) (Max.) VB (V) (Min.) IT (mA) VC @5A (Max.) (Max.) SMDA 05-6 5 6 1 9.8 12 13.3 1 15 16.7 24 26.7 ESD05V08S-6L SMDA 12-6 SMDA 15-6 ESD12V08S-6L ESD15V08S-6L SMDA 24-6 ESD24V08S-6L (@A) IR (μA) (Max.) C (pF) (Typ.) 20 25 5 350 19 30 21 1 120 1 24 32 17 1 75 1 43 48 12 1 50 VC Characteristic Curves Fig1. 8/20μs Pulse Waveform Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) 120 IPP - Peak Pulse Current - % of IPP 100 Peak Value IPP 80 100% TEST WAVEFORM PARAMETERS tr=8μs td=20μs Percent of Peak Pulse Current % tr 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 10% tr = 0.7~1ns Time (ns) 30ns 30 60ns t - Time (μs) Fig3. 90% Power Derating Curve % of Rated Power or IPP 110 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 Ambient Temperature – TA (ºC) UN Semiconductor Co., Ltd. Revision January 06, 2014 www.unsemi.com.tw 2/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors Array for ESD Protection ESDXXV08S-6L Series SO-08 Package Outline & Dimensions Millimeters Inches DIM Min Max Min Max A 4.80 5.00 0.189 0.197 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.053 0.069 D 0.33 0.51 0.013 0.020 G 1.27BSC 0.050BSC H 0.10 0.25 0.004 0.010 J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050 M 0° 8° 0° 8° N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244 Soldering Footprint UN Semiconductor Co., Ltd. Revision January 06, 2014 www.unsemi.com.tw 3/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.