AP5331GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Lower Gate Charge
BVDSS
150V
▼ Simple Drive Requirement
RDS(ON)
160mΩ
▼ Fast Switching Characteristic
ID
2.3A
▼ Halogen Free & RoHS Compliant Product
D2
D2
D1
Description
D1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
S2
G1
SO-8
S1
D2
D1
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
150
V
+20
V
3
2.3
A
3
1.9
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
10
A
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient 3
62.5
℃/W
Data and specifications subject to change without notice
1
201101201
AP5331GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
150
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=2A
-
-
160
mΩ
VGS=4.5V, ID=1.5A
-
-
210
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=2A
-
4
-
S
IDSS
Drain-Source Leakage Current
VDS=120V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=2A
-
12
19
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=120V
-
3.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7.5
-
nC
VDS=75V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
23
-
ns
tf
Fall Time
VGS=10V
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
Coss
Output Capacitance
VDS=25V
-
85
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
55
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
2.8
Ω
Min.
Typ.
IS=1.5A, VGS=0V
-
-
1.3
V
1000 1600
pF
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=2A, VGS=0V
-
50
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
110
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP5331GM-HF
10
12
o
8
10V
8.0V
7.0V
6.0V
V G = 5.0V
8
ID , Drain Current (A)
10
ID , Drain Current (A)
T A = 150 o C
10V
8.0V
7.0V
6.0V
V G = 5.0V
T A = 25 C
6
4
6
4
2
2
0
0
0
1
2
3
4
0
1
Fig 1. Typical Output Characteristics
3
4
5
Fig 2. Typical Output Characteristics
170
2.4
ID=2A
V G =10V
I D = 1.5 A
T A =25 ℃
160
2.0
Normalized RDS(ON)
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
150
140
130
1.6
1.2
0.8
120
0.4
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
2.0
I D =1mA
Normalized VGS(th) (V)
1.6
IS(A)
2
T j =25 o C
o
T j =150 C
1
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP5331GM-HF
f=1.0MHz
1600
8
ID=2A
1200
V DS = 120V
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss
800
4
400
2
0
0
0
4
8
12
16
20
1
24
5
9
13
17
21
25
C oss
C rss
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
ID (A)
Operation in this
area limited by
RDS(ON)
100us
1ms
1
10ms
0.1
100ms
1s
0.01
DC
o
T A =25 C
Single Pulse
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 135℃/W
Single Pulse
0.001
0.001
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4