CPxxxxSC Series SMB Plastic-Encapsulate Diodes Thyristor Surge Suppressors Features ● Low switching voltage SMB ● Low on-state voltage ● Does not degrade surge capability after multiple surge Events within limit ● Fails short circuit when surged in excess of ratings ● Low Capacitance Applications ● Protect circuit Parameter Symbol Value Unit Tstg -60 60 to +150 ℃ Operating junction temperature range Tj -40 40 to +150 ℃ Repetitive peak pulse current IPP 100 A Storage temperature range Symbol Parameter VDRM Peak off-state state voltage IDRM Off-state state current VS Switching voltage IS Switching current VT On-state state voltage IT On-state state current IH Holding current CO Off-state state capacitance V-I Curve +I IT IS IH IDRM +V -V VT V DRM V S -I High Diode Semiconductor 1 Electrical Characteristics , IDRM@VDRM Part Number μA V max VS①@IS VT@ IT IH CO② V mA V A mA pF max max max max min max Marking CP0080SC 5 6 25 800 4 2.2 30 60 CP-8C CP0220SC 5 18 30 800 4 2.2 30 60 CP22C CP0300SC 5 25 40 800 4 2.2 30 60 CP03C CP0640SC 5 58 77 800 4 2.2 120 60 CP06C CP0720SC 5 65 87 800 4 2.2 120 50 CP07C CP0900SC 5 75 98 800 4 2.2 120 50 CP09C CP1100SC 5 90 130 800 4 2.2 120 50 CP11C CP1300SC 5 120 160 800 4 2.2 120 50 CP13C CP1500SC 5 140 180 800 4 2.2 120 45 CP15C CP1800SC 5 170 220 800 4 2.2 120 45 CP18C CP2300SC 5 190 260 800 4 2.2 120 40 CP23C CP2600SC 5 220 300 800 4 2.2 120 40 CP26C CP3100SC 5 275 350 800 4 2.2 120 35 CP31C CP3500SC 5 320 400 800 4 2.2 120 35 CP35C CP3800SC 5 340 450 800 4 2.2 120 35 CP38C ① Vs is measured at 100KV/s ② Off-state capacitance is measured in VDC=2V, VRMS=1V, f=1MHz Surge Ratings Series C IPP (A) min 2×10us 8×20us 10×360us 10×1000us 500 400 175 100 High Diode Semiconductor 2 Typical Characteristics FIG.1: tr × td pulse waveform FIG.2: Reflow condition tp %IPP TP tr = rise time to peak value td = decay time to half value 100 Critical Zone TL to T P Ramp-up Peak value TL tL Temperature TS(max) Half value 50 TS(min) 25 t(μs) 0 0 tr Ramp-down Preheat td FIG.3: Normalized Vs change vs. junction temperature time to peak temperatue (t 25℃ to peak) Time FIG.4: Normalized DC holding current vs. case temperature Percent of Vs change(%) 2.0 12 ts IH(Tj )/I H(Tj =25℃) 1.8 1.6 8 1.4 4 25℃ 1.2 25℃ 1.0 0 0.8 -4 0.6 -8 -40 -20 0 20 T j (℃ ) 40 60 80 100 120 140 160 0.4 -40 -20 0 20 40 T C (℃ ) 60 80 High Diode Semiconductor 100 120 140 160 3 SMB 0.155(3.94) 0.130(3.30) 0.087 (2.20) 0.071 (1.80) 0.180(4.57) 0.160(4.06) 0.012(0.305) 0.006(0.152) 0.096(2.44) 0.084(2.13) 0.060(1.52) 0.030(0.76) 0.008(0.203)MAX. 0.220(5.59) 0.205(5.21) Dimensions in inches and (millimeters) SMB 4.26 1.8 JSHD JSHD High Diode Semiconductor 4 Reel Taping Specifications For Surface Mount Devices-SMB High Diode Semiconductor 5