Chenmko CHUMT1PT Dual silicon transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHUMT1PT
SURFACE MOUNT
Dual Silicon Transistor
VOLTAGE 50 Volts
CURRENT 150 mAmpere
APPLICATION
* Small Signal Amplifier .
FEATURE
* Surface mount package. (SC-88/SOT-363)
* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=50mA)
* Low cob. Cob=4.0pF(Typ.)
SC-88/SOT-363
* PC= 150mW (Total),120mW per element must not be exceeded.
* High saturation current capability.
(1)
(6)
* Two the 2SA1037K in one package.
0.65
1.2~1.4
* PNP Silicon Transistor
2.0~2.2
0.65
(4)
0.15~0.35 (3)
1.15~1.35
0.8~1.1
0.08~0.15
0~0.1
0.1 Min.
CIRCUIT
6
4
1
3
2.15~2.45
SC-88/SOT-363
Dimensions in millimeters
2SA1037K LIMITING VALUES
MAXIMUM RATINGES ( At TA = 25 C unless otherwise noted )
SYMBOL
MIN.
MAX.
UNITS
Collector - Base Voltage
RATINGS
Open Emitter
CONDITION
VCBO
-
-60
Volts
Collector - Emitter Voltage
Open Base
VCEO
-
-50
Volts
Emitter - Base Voltage
Open Collector
VEBO
-
-6
Volts
IC
-
-150
mAmps
Peak Collector Current
ICM
-
-150
mAmps
Peak Base Current
IBM
-
-15
mAmps
PTOT
-
150
mW
Storage Temperature
TSTG
-55
+150
o
C
Junction Temperature
TJ
-
+150
o
C
+150
o
C
Collector Current DC
Total Power Dissipation
TA ≤ 25OC; Note 1
Operating Ambient Temperature
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
TAMB
-55
RATING CHARACTERISTIC CURVES ( CHUMT1PT )
2SA1037K CHARACTERISTICS
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
Collector-base breakdown voltage
PARAMETERS
IC=-50uA
CONDITION
BVCBO
-60
Collector-emitter breakdown voltage
IC=-1mA
BVCEO
-50
Emitter-base breakdown voltage
IE=-50uA
BVEBO
Collector Cut-off Current
IE=0; VCB=-60V
Emitter Cut-off Current
TYPE
MAX.
UNITS
-
Volts
-
-
Volts
-6
-
-
Volts
ICBO
-
-
-0.1
IC=0; VEB=-6V
IEBO
-
-
-0.1
DC Current Gain
VCE=-6V
IC=-1mA
hFE
120
-
560
Collector-Emitter Saturation Voltage
IC=-50mA; IB=-5mA
VCEsat
-
-
-0.5
Volts
Output Collector Capacitance
IE=ie=0; VCB=-12V;
f=1MHz
Cob
-
4
5.0
pF
Transition Frequency
IE=2mA; VCE=-12V;
f=100MHz
fT
-
140
-
MHz
-
uA
RATING CHARACTERISTIC CURVES ( CHUMT1PT )
2SA1037K Typical Electrical Characteristics
−5
−2
−1
−0.5
−0.2
−0.1
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 -1.8
−24.5
DC CURRENT GAIN : hFE
−40˚C
100
50
−50 −100
COLLECTOR CURRENT : IC (mA)
−17.5
TRANSITION FREQUENCY : fT (MHz)
Ta=25˚C
VCE=−12V
500
200
100
50
0.5
1
2
5
10
20
EMITTER CURRENT : IE (mA)
−14.0
−4
−10.5
−7.0
−2
−0.4
−0.8
−1.2
−1.6
50
−1
IB=0
−2.0
Ta=25˚C
−0.5
−0.2
IC/IB=50
−0.1
20
10
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
100
VCE=−5V
−3V
−1V
Ta=25˚C
200
100
50
−3.5µA
COLLECTOR CURRENT : IC (mA)
Fig.7 Gain bandwidth product vs.
emitter current
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
VCE=−6V
−5 −10 −20
−21.0
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current
Fig. 5 Collector-emitter saturation
voltage vs. collector current
25˚C
−2
−28.0
BASE TO EMITTER VOLTAGE : VBE (V)
500
−0.2 −0.5 −1
500
−31.5
−6
0
Fig.4 DC current gain vs.
collector current (2)
200
−35.0
Ta=25˚C
−8
BASE TO EMITTER VOLTAGE : VBE (V)
Ta=100˚C
Fig.3 DC current gain vs.
collector current (1)
Grounded emitter output
characteristics
DC CURRENT GAIN : hFE
−10
−10
VCE=−6V
Ta=100˚C
25˚C
−40˚C
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
−50
−20
Fig.2
Grounded emitter propagation
characteristics
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Fig.1
−50 −100
−1
lC/lB=10
−0.5
−0.2
−0.1
Ta=100˚C
25˚C
−40˚C
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
COLLECTOR CURRENT : IC (mA)
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