isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUY18S DESCRIPTION ·Collector-Emitter Breakdown Voltage- · : V(BR)CEO= 200V(MIN) ·Low Collector Saturation Voltage: VCE(sat)= 1.0V@ IC= 5A APPLICATIONS ·Designed for use switching and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A PC Collector Power Dissipation @TC＜75℃ 50 W Tj Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUY18S ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 200 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1m A; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.2 V ICBO Collector Cutoff Current VCB=400V; IE= 0 10 μA hFE DC Current Gain IC= 1A ; VCE= 5V Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V fT isc website：www.iscsemi.com 2 20 50 MHz isc & iscsemi is registered trademark