SUPPLEMENT Am29LV800B Known Good Die 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS ■ Single power supply operation — 2.7 to 3.6 V for read, program, and erase operations — Ideal for battery-powered applications ■ Manufactured on 0.35 µm process technology ■ High performance — 90 or 120 ns access time ■ Low power consumption (typical values at 5 MHz) ■ Top or bottom boot block configurations available ■ Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses — 200 nA Automatic Sleep mode current ■ Minimum 1,000,000 write cycle guarantee per sector — 200 nA standby mode current ■ Compatibility with JEDEC standards — 7 mA read current — 15 mA program/erase current ■ Flexible sector architecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte sectors (byte mode) — One 8 Kword, two 4 Kword, one 16 Kword, and fifteen 32 Kword sectors (word mode) — Supports full chip erase — Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked in-system or via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors — Pinout and software compatible with singlepower supply Flash — Superior inadvertent write protection ■ Data# Polling and toggle bits — Provides a software method of detecting program or erase operation completion ■ Ready/Busy# pin (RY/BY#) — Provides a hardware method of detecting program or erase cycle completion ■ Erase Suspend/Erase Resume — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation ■ Hardware reset pin (RESET#) — Hardware method to reset the device to reading array data ■ Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences Publication# 21356 Rev: B Amendment/+1 Issue Date: March 1998 S U P P L E M E N T GENERAL DESCRIPTION The Am29LV800B in Known Good Die (KGD) form is an 8 Mbit, 3.0 volt-only Flash memory. AMD defines KGD as standard product in die form, tested for functionality and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. Am29LV800B Features The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. The Am29LV800B is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The word-wide data (x16) appears on DQ15– DQ0; the byte-wide (x8) data appears on DQ7–DQ0. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. No VPP is required for program or erase operations. The device can also be programmed in standard EPROM programmers. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four. Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. 2 Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both these modes. AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection. ELECTRICAL SPECIFICATIONS Refer to the Am29LV800B data sheet, publication number 21490, for full electrical specifications on the Am29LV800B in KGD form. Am29LV800B Known Good Die S U P P L E M E N T PRODUCT SELECTOR GUIDE Family Part Number Am29LV800B KGD Speed Option (VCC = 2.7 – 3.6 V) -90 -120 Max Access Time, tACC (ns) 90 120 Max CE# Access, tCE (ns) 90 120 Max OE# Access, tOE (ns) 35 50 DIE PHOTOGRAPH Orientation relative to leading edge of tape and reel Orientation relative to top left corner of Gel-Pak Am29LV800B Known Good Die 3 S U P P L E M E N T DIE PAD LOCATIONS 9 8 7 6 5 4 3 2 1 44 43 42 41 40 39 38 37 36 10 35 11 34 12 33 AMD logo location 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 4 Am29LV800B Known Good Die S U P P L E M E N T PAD DESCRIPTION Pad Signal 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 VCC DQ4 DQ12 DQ5 DQ13 DQ6 DQ14 DQ7 DQ15/A–1 VSS BYTE# A16 A15 A14 A13 A12 A11 A10 A9 A8 WE# RESET# RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE# VSS OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 Pad Center (mils) X Y 0.00 0.00 –12.74 0.00 –18.96 0.00 –25.11 0.00 –31.33 0.00 –37.48 0.00 –43.71 0.00 –49.85 0.00 –56.08 0.00 –66.01 –1.69 –66.01 –12.30 –66.01 –22.92 –65.65 –266.81 –59.50 –266.81 –53.80 –266.81 –47.65 –266.81 –41.95 –266.81 –35.80 –266.81 –30.09 –266.55 –23.85 –266.81 –18.15 –266.81 –8.06 –270.78 10.07 –270.78 20.14 –266.81 25.85 –266.81 31.99 –266.81 37.70 –266.81 43.84 –266.81 49.55 –266.81 55.69 –266.81 61.40 –266.81 67.54 –266.81 67.91 –23.08 67.91 –12.45 67.91 –1.91 58.00 2.27 50.02 0.00 43.79 0.00 37.65 0.00 31.42 0.00 25.28 0.00 19.05 0.00 12.91 0.00 6.68 0.00 Pad Center (millimeters) X Y 0.0000 0.0000 –0.3235 0.0000 –0.4817 0.0000 –0.6377 0.0000 –0.7959 0.0000 –0.9519 0.0000 –1.1101 0.0000 –1.2661 0.0000 –1.4243 0.0000 –1.6767 –0.0430 –1.6767 –0.3123 –1.6767 –0.5822 –1.6674 –6.7770 –1.5114 –6.7770 –1.3664 –6.7770 –1.2104 –6.7770 –1.0654 –6.7770 –0.9094 –6.7770 –0.7644 –6.7704 –0.6059 –6.7770 –0.4609 –6.7770 –0.2047 –6.8778 0.2558 –6.8778 0.5116 –6.7770 0.6566 –6.7770 0.8126 –6.7770 0.9576 –6.7770 1.1136 –6.7770 1.2586 –6.7770 1.4146 –6.7770 1.5596 –6.7770 1.7156 –6.7770 1.7249 –0.5862 1.7249 –0.3163 1.7249 –0.0484 1.4732 0.0576 1.2705 0.0000 1.1123 0.0000 0.9563 0.0000 0.7981 0.0000 0.6421 0.0000 0.4839 0.0000 0.3279 0.0000 0.1697 0.0000 Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment. Am29LV800B Known Good Die 5 S U P P L E M E N T ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Am29LV800B T -90 DP 5 C 1 DIE REVISION This number refers to the specific AMD manufacturing process and product technology reflected in this document. It is entered in the revision field of AMD standard product nomenclature. TEMPERATURE RANGE C = Commercial (0°C to +70°C) I = Industrial (–40°C to +85°C) DIE THICKNESS 5 = 500 µm PACKAGE TYPE AND MINIMUM ORDER QUANTITY* DP = Waffle Pack Die per 5 tray stack DG = Gel-Pak® Die Tray Die per 6 tray stack DT = Surftape™ (Tape and Reel) Die per 7-inch reel DW = Gel-Pak® Wafer Tray (sawn wafer on frame) Call AMD sales office for minimum order quantity * Contact an AMD representative for quantities. SPEED OPTION See Product Selector Guide and Valid Combinations BOOT CODE SECTOR ARCHITECTURE T = Top sector B = Bottom sector DEVICE NUMBER/DESCRIPTION Am29LV800B Known Good Die 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS Flash Memory—Die Revision 1 3.0 Volt-only Program and Erase Valid Combinations Am29LV800BT-90 Am29LV800BB-90 Am29LV800BT-120 Am29LV800BB-120 6 DPC 1, DPI 1, DGC 1, DGI 1, DTC 1, DTI 1, DWC 1, DWI 1 Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. Am29LV800B Known Good Die S U P P L E M E N T PRODUCT TEST FLOW Figure 1 provides an overview of AMD’s Known Good Die test flow. For more detailed information, refer to the Am29LV800B product qualification database supplement for KGD. AMD implements quality assurance procedures throughout the product test flow. In addition, Wafer Sort 1 Bake 24 hours at 250°C Wafer Sort 2 Wafer Sort 3 High Temperature Packaging for Shipment an off-line quality monitoring program (QMP) further guarantees AMD quality standards are met on Known Good Die products. These QA procedures also allow AMD to produce KGD products without requiring or implementing burn-in. DC Parameters Functionality Programmability Erasability Data Retention DC Parameters Functionality Programmability Erasability DC Parameters Functionality Programmability Erasability Speed Incoming Inspection Wafer Saw Die Separation 100% Visual Inspection Die Pack Shipment Figure 1. AMD KGD Product Test Flow Am29LV800B Known Good Die 7 S U P P L E M E N T PHYSICAL SPECIFICATIONS MANUFACTURING INFORMATION Die dimensions . . . . . . . . . . . . . . 147 mils x 293 mils . . . . . . . . . . . . . . . . . . . . . . . . . . 3.74 mm x 7.45 mm Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . . FASL Die Thickness . . . . . . . . . . . . . . . . . . . . . . . . ~20 mils Manufacturing ID (Top Boot) . . . . . . . . . . . . . 98925AK Bond Pad Size . . . . . . . . . . . . . . 3.94 mils x 3.94 mils . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 µm x 100 µm (Bottom Boot). . . . . . . . .98925ABK Pad Area Free of Passivation . . . . . . . . . .15.52 mils2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10,000 µm2 Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44 Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SDC Preparation for Shipment . . . . . . . . Penang, Malaysia Fabrication Process . . . . . . . . . . . . . . . . . . . . . . CS39 Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Bond Pad Metalization . . . . . . . . . . . . . . . . . . Al/Cu/Si Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal, may be grounded (optional) Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride DC OPERATING CONDITIONS VCC (Supply Voltage) . . . . . . . . . . . . . . . 2.7 V to 3.6 V Operating Temperature Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C SPECIAL HANDLING INSTRUCTIONS Processing Do not expose KGD products to ultraviolet light or process them at temperatures greater than 250°C. Failure to adhere to these handling instructions will result in irreparable damage to the devices. For best yield, AMD recommends assembly in a Class 10K clean room with 30% to 60% relative humidity. Storage Store at a maximum temperature of 30°C in a nitrogenpurged cabinet or vacuum-sealed bag. Observe all standard ESD handling procedures. 8 Am29LV800B Known Good Die S U P P L E M E N T TERMS AND CONDITIONS OF SALE FOR AMD NON-VOLATILE MEMORY DIE All transactions relating to AMD Products under this agreement shall be subject to AMD’s standard terms and conditions of sale, or any revisions thereof, which revisions AMD reserves the right to make at any time and from time to time. In the event of conflict between the provisions of AMD’s standard terms and conditions of sale and this agreement, the terms of this agreement shall be controlling. AMD warrants articles of its manufacture against defective materials or workmanship for a period of ninety (90) days from date of shipment. This warranty does not extend beyond AMD’s customer, and does not extend to die which has been affixed onto a board or substrate of any kind. The liability of AMD under this warranty is limited, at AMD’s option, solely to repair or to replacement with equivalent articles, or to make an appropriate credit adjustment not to exceed the original sales price, for articles returned to AMD, provided that: (a) The Buyer promptly notifies AMD in writing of each and every defect or nonconformity in any article for which Buyer wishes to make a warranty claim against AMD; (b) Buyer obtains authorization from AMD to return the article; (c) the article is returned to AMD, transportation charges paid by AMD, F.O.B. AMD’s factory; and (d) AMD’s examination of such article discloses to its satisfaction that such alleged defect or nonconformity actually exists and was not caused by negligence, misuse, improper installation, accident or unauthorized repair or alteration by an entity other than AMD. The aforementioned provisions do not extend the original warranty period of any article which has either been repaired or replaced by AMD. THIS WARRANTY IS EXPRESSED IN LIEU OF ALL OTHER WARRANTIES, EXPRESSED OR IMPLIED, INCLUDING THE IMPLIED WARRANTY OF FITNESS FOR A PARTICULAR PURPOSE, THE IMPLIED WARRANTY OF MERCHANTABILITY AND OF ALL OTHER OBLIGATIONS OR LIABILITIES ON AMD’S PART, AND IT NEITHER ASSUMES NOR AUTHORIZES ANY OTHER PERSON TO ASSUME FOR AMD ANY OTHER LIABILITIES. THE FOREGOING CONSTITUTES THE BUYERS SOLE AND EXCLUSIVE REMEDY FOR THE FURNISHING OF DEFECTIVE OR NON CONFORMING ARTICLES AND AMD SH ALL NOT IN AN Y EVENT BE LIABLE FOR DAMAGES BY REASON OF FAILURE OF ANY PRODUCT TO FUNCTION PROPERLY OR FOR ANY SPECIAL, INDIRECT, CONSEQUENTIAL, INCIDENTAL OR EXEMPLARY DAMAGES, INCLUDING BUT NOT LIMITED TO, LOSS OF PROFITS, LOSS OF USE OR COST OF LABOR BY REASON OF THE FACT THAT SUCH ARTICLES SHALL HAVE BEEN DEFECTIVE OR NON CONFORMING. Buyer agrees that it will make no warranty representations to its customers which exceed those given by AMD to Buyer unless and until Buyer shall agree to indemnify AMD in writing for any claims which exceed AMD’s warranty. Buyer assumes all responsibility for successful die prep, die attach and wire bonding processes. Due to the unprotected nature of the AMD Products which are the subject hereof, AMD assumes no responsibility for environmental effects on die. AMD products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can reasonably be expected to result in a personal injury. Buyer’s use of AMD products for use in life support applications is at Buyer’s own risk and Buyer agrees to fully indemnify AMD for any damages resulting in such use or sale. REVISION SUMMARY FOR AM29LV800B KNOWN GOOD DIE Revision B+1 Revision B Changed read and program/erase current to match data sheet. Formatted to match current template. Updated Distinctive Characteristics and General Description sections using the current main data sheet. Updated for CS39 process technology. Distinctive Characteristics Pad Description Corrected signal names for pads 13–44. Replaced values for all pad coordinates. Trademarks Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. Am29LV800B Known Good Die 9