NXP BLF6G27LS-75 Wimax power ldmos transistor Datasheet

BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
Rev. 01 — 22 October 2009
Product data sheet
1. Product profile
1.1 General description
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz
to 2700 MHz.
Table 1.
Typical performance
RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
1-carrier N-CDMA[1]
f
VDS
PL(AV)
PL(M) Gp
ηD
ACPR885k ACPR1980k
(MHz)
(V)
(W)
(W)
(dB)
(%) (dBc)
(dBc)
2500 to 2700
28
9
75
17
23
−50[2]
−60[2]
[1]
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2]
Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
n Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and
2700 MHz, a supply voltage of 28 V and an IDq of 600 mA:
u Average output power = 9 W
u Power gain = 17 dB
u Drain efficiency = 23 %
u ACPR885 = −50.0 dBc in 30 kHz bandwidth
n Easy power control
n Integrated ESD protection
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation (2500 MHz to 2700 MHz)
n Internally matched for ease of use
BLF6G27-75; BLF6G27LS-75
NXP Semiconductors
WiMAX power LDMOS transistor
n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
n RF power amplifiers for base stations and multicarrier applications in the
2500 MHz to 2700 MHz frequency range
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLF6G27-75 (SOT502A)
1
drain
2
gate
3
source
1
1
[1]
3
2
2
3
sym112
BLF6G27LS-75 (SOT502B)
1
drain
2
gate
3
source
1
1
[1]
3
2
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BLF6G27-75
-
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
SOT502A
BLF6G27LS-75
-
earless flanged LDMOST ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Conditions
Min
Max
Unit
drain-source voltage
-
65
V
VGS
gate-source voltage
−0.5
+13
V
ID
drain current
-
18
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
200
°C
BLF6G27-75_6G27LS-75_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 22 October 2009
2 of 14
BLF6G27-75; BLF6G27LS-75
NXP Semiconductors
WiMAX power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Type
Rth(j-case)
thermal resistance from Tcase = 80 °C;
BLF6G27-75
junction to case
PL = 60 W (CW) BLF6G27LS-75
Typ
Unit
0.85
K/W
0.75
K/W
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C per section; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.5 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 100 mA
1.4
2
2.4
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
3
µA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
14.9
18
-
A
IGSS
gate leakage current
VGS = +11 V; VDS = 0 V
-
-
300
nA
gfs
forward transconductance
VDS = 10 V; ID = 5 A
-
7
-
S
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 3.5 A
-
0.14
0.25
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
1.6
-
pF
7. Application information
Table 7.
Application information
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f1 = 2500 MHz; f2 = 2600 MHz; f3 = 2700 MHz; RF performance at VDS = 28 V;
IDq = 600 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL(AV) = 9 W
15
17
-
dB
RLin
input return loss
PL(AV) = 9 W
-
−10
ηD
drain efficiency
PL(AV) = 9 W
19.0 23
ACPR885k
adjacent channel power ratio
(885 kHz)
PL(AV) = 9 W
[1]
-
ACPR1980k
adjacent channel power ratio
(1980 kHz)
PL(AV) = 9 W
[1]
PL(M)
peak output power
[2]
dB
%
−50
−45
dBc
-
−60
−55
dBc
70
75
-
W
[1]
Measured within 30 kHz bandwidth.
[2]
Measured at 2.7 GHz and 3 dB compression of the CCDF at 0.01 % probability.
BLF6G27-75_6G27LS-75_1
Product data sheet
-
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 22 October 2009
3 of 14
BLF6G27-75; BLF6G27LS-75
NXP Semiconductors
WiMAX power LDMOS transistor
7.1 Ruggedness in class-AB operation
The BLF6G27-75 and BLF6G27LS-75 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 600 mA; PL = 65 W (CW); f = 2500 MHz.
7.2 One-tone CW
001aak974
20
001aak975
70
ηD
(%)
60
Gp
(dB)
18
16
(2)
(1)
(3)
50
(1)
(3)
(2)
40
30
14
20
12
10
0
10
0
20
40
60
80
0
20
40
PL (W)
VDS = 28 V; IDq = 600 mA.
VDS = 28 V; IDq = 600 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(3) f = 2700 MHz
Power gain as a function of load power;
typical values
Fig 2.
Drain efficiency as a function of load power;
typical values
BLF6G27-75_6G27LS-75_1
Product data sheet
80
PL (W)
(1) f = 2500 MHz
Fig 1.
60
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 22 October 2009
4 of 14
BLF6G27-75; BLF6G27LS-75
NXP Semiconductors
WiMAX power LDMOS transistor
7.3 Single carrier IS-95
001aak976
19
001aak977
50
ηD
(%)
Gp
(dB)
18
40
(2)
(1)
(3)
(1)
(3)
(2)
17
30
16
20
15
10
14
0
0
10
20
30
40
50
0
10
20
30
40
PL (W)
VDS = 28 V; IDq = 600 mA.
VDS = 28 V; IDq = 600 mA.
(1) f = 2500 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(3) f = 2700 MHz
Fig 3.
Power gain as a function of load power;
typical values
001aak978
−20
ACPR885k
(dBc)
Fig 4.
Drain efficiency as a function of load power;
typical values
001aak979
−40
ACPR1980k
(dBc)
−30
−50
−40
(1)
(2)
(3)
−60
(2)
(1)
(3)
−50
−70
−60
−70
−80
0
10
20
30
40
50
0
10
20
PL (W)
VDS = 28 V; IDq = 600 mA.
40
50
VDS = 28 V; IDq = 600 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(3) f = 2700 MHz
Adjacent channel power ratio (885 kHz) as a
function of load power; typical values
Fig 6.
Adjacent channel power ratio (1980 kHz) as a
function of load power; typical values
BLF6G27-75_6G27LS-75_1
Product data sheet
30
PL (W)
(1) f = 2500 MHz
Fig 5.
50
PL (W)
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 22 October 2009
5 of 14
BLF6G27-75; BLF6G27LS-75
NXP Semiconductors
WiMAX power LDMOS transistor
7.4 Single carrier W-CDMA
001aak980
19
Gp
(dB)
001aak981
60
ηD
(%)
18
40
(1)
(3)
(2)
17
(2)
(3)
(1)
16
20
15
14
0
0
10
20
30
40
50
0
10
20
30
40
PL (W)
VDS = 28 V; IDq = 600 mA.
VDS = 28 V; IDq = 600 mA.
(1) f = 2500 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(3) f = 2700 MHz
Fig 7.
Power gain as a function of load power;
typical values
001aak982
−10
Fig 8.
ACPR10M
(dBc)
−20
−30
−30
−40
(2)
(1)
(3)
Drain efficiency as a function of load power;
typical values
001aak983
−20
ACPR5M
(dBc)
−40
(1)
(2)
(3)
−50
−50
−60
−60
−70
0
10
20
30
40
50
0
10
20
PL (W)
VDS = 28 V; IDq = 600 mA.
40
50
VDS = 28 V; IDq = 600 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(3) f = 2700 MHz
Adjacent channel power ratio (5 MHz) as a
function of load power; typical values
Fig 10. Adjacent channel power ratio (10 MHz) as a
function of load power; typical values
BLF6G27-75_6G27LS-75_1
Product data sheet
30
PL (W)
(1) f = 2500 MHz
Fig 9.
50
PL (W)
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 22 October 2009
6 of 14
BLF6G27-75; BLF6G27LS-75
NXP Semiconductors
WiMAX power LDMOS transistor
7.5 2-carrier W-CDMA
001aak984
19
Gp
(dB)
001aak985
60
ηD
(%)
18
40
(1)
(3)
(2)
17
(2)
(3)
(1)
16
20
15
14
0
0
10
20
30
40
50
0
10
20
30
40
PL (W)
VDS = 28 V; IDq = 600 mA; carrier spacing = 10 MHz.
VDS = 28 V; IDq = 600 mA; carrier spacing = 10 MHz.
(1) f = 2500 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(3) f = 2700 MHz
Fig 11. Power gain as a function of load power;
typical values
001aak986
−10
Fig 12. Drain efficiency as a function of load power;
typical values
ACPR10M
(dBc)
−20
−20
−30
−30
(3)
(1)
(2)
001aak987
−10
ACPR5M
(dBc)
−40
50
PL (W)
(3)
(2)
(1)
−40
−50
−50
−60
−60
0
10
20
30
40
50
0
10
PL (W)
VDS = 28 V; IDq = 600 mA; carrier spacing = 10 MHz.
40
50
VDS = 28 V; IDq = 600 mA; carrier spacing = 10 MHz.
(1) f = 2500 MHz
(2) f = 2600 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(3) f = 2700 MHz
Fig 14. Adjacent channel power ratio (10 MHz) as a
function of load power; typical values
BLF6G27-75_6G27LS-75_1
Product data sheet
30
PL (W)
(1) f = 2500 MHz
Fig 13. Adjacent channel power ratio (5 MHz) as a
function of load power; typical values
20
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 22 October 2009
7 of 14
BLF6G27-75; BLF6G27LS-75
NXP Semiconductors
WiMAX power LDMOS transistor
8. Test information
8.1 Impedance information
Table 8.
Typical impedance
Typical values per section unless otherwise specified.
f
ZS
ZL
GHz
Ω
Ω
2.5
5.3 − j7.7
6.0 − j3.3
2.6
8.7 − j8.7
4.7 − j2.6
2.7
12.2 + j0.4
3.9 − j2.4
drain
ZL
gate
ZS
001aaf059
Fig 15. Definition of transistor impedance
8.2 Test circuit
C5
R1
C6
B1
C7
C2
C3
R2
C4
C1
BLF6G27-75
OUTPUT REV2
NXP
BLF6G27-75
INPUT REV2
NXP
001aak988
Printed-Circuit Board (PCB) material: Taconic RF35 with εr = 3.5 and thickness = 0.762 mm.
See Table 9 for list of components.
Fig 16. Component layout
BLF6G27-75_6G27LS-75_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 22 October 2009
8 of 14
NXP Semiconductors
BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
Table 9.
List of components
See Figure 16 for component layout.
Component
Description
Value
B1
ferrite bead
-
C1, C2, C3
multilayer ceramic chip capacitor
13 pF
[1]
C4
multilayer ceramic chip capacitor
10 pF
[2]
C5, C6
multilayer ceramic chip capacitor
4.7 µF
C7
electrolytic capacitor
220 µF; 63 V
R1, R2
SMD resistor
10 Ω
[1]
American Technical Ceramics type 100A or capacitor of same quality.
[2]
American Technical Ceramics type 100B or capacitor of same quality.
BLF6G27-75_6G27LS-75_1
Product data sheet
Remarks
TDK
SMD 1206
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 22 October 2009
9 of 14
BLF6G27-75; BLF6G27LS-75
NXP Semiconductors
WiMAX power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D1
U1
B
q
c
C
1
H
L
E1
p
U2
E
w1 M A M B M
A
2
w2 M C M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
p
Q
q
U1
U2
w1
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
3.38
3.12
1.70
1.45
27.94
34.16
33.91
9.91
9.65
0.25
0.51
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.067
1.100
0.057
1.345
1.335
0.390
0.380
0.01
0.02
D
D1
0.045 0.785
0.035 0.745
0.210 0.133
0.170 0.123
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-28
03-01-10
SOT502A
Fig 17. Package outline SOT502A
BLF6G27-75_6G27LS-75_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 22 October 2009
10 of 14
BLF6G27-75; BLF6G27LS-75
NXP Semiconductors
WiMAX power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D1
c
U1
1
L
H
E1
U2
E
2
w2 M D M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
Q
U1
U2
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
1.70
1.45
20.70
20.45
9.91
9.65
0.25
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.045 0.785
0.035 0.745
0.210
0.170
0.067 0.815
0.057 0.805
D
D1
REFERENCES
IEC
JEDEC
JEITA
0.390
0.010
0.380
EUROPEAN
PROJECTION
ISSUE DATE
03-01-10
07-05-09
SOT502B
Fig 18. Package outline SOT502B
BLF6G27-75_6G27LS-75_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 22 October 2009
11 of 14
BLF6G27-75; BLF6G27LS-75
NXP Semiconductors
WiMAX power LDMOS transistor
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
IS-95
Interim Standard 95
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
N-CDMA
Narrowband Code Division Multiple Access
PAR
Peak-to-Average power Ratio
RF
Radio Frequency
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
WiMAX
Worldwide Interoperability for Microwave Access
11. Revision history
Table 11.
Revision history
Document ID
Release date
BLF6G27-75_6G27LS-75_1 20091022
Data sheet status
Change notice
Supersedes
Product data sheet
-
-
BLF6G27-75_6G27LS-75_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 22 October 2009
12 of 14
NXP Semiconductors
BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
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Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
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Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF6G27-75_6G27LS-75_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 22 October 2009
13 of 14
NXP Semiconductors
BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.5
8
8.1
8.2
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 4
One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Single carrier IS-95 . . . . . . . . . . . . . . . . . . . . . . 5
Single carrier W-CDMA . . . . . . . . . . . . . . . . . . 6
2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8
Impedance information . . . . . . . . . . . . . . . . . . . 8
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 22 October 2009
Document identifier: BLF6G27-75_6G27LS-75_1
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