Transistors SMD Type NPN Transistors BC846W,BC847W,BC848W (KC846W,KC847W,KC848W) ■ Features ● Ideally suited for automatic insertion ● For Switching and AF Amplifier Applications 1 Base 2 Emitter 3 Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol BC846W Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage BC847W Rating 80 VCBO 50 BC848W 30 BC846W 65 BC847W VCEO 45 BC848W 30 BC846W 6 BC847W Unit VEBO BC848W V 6 5 Collector Current - Continuous IC 100 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range ℃ www.kexin.com.cn 1 Transistors SMD Type NPN Transistors BC846W,BC847W,BC848W (KC846W,KC847W,KC848W) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min BC846W Collector- base breakdown voltage Ic= 100 μA， IE=0 BC848W 30 65 VCEO Ic= 10 mA， IB=0 30 BC846W 6 VEBO BC847W IE= 100μA， IC=0 6 5 VCB= 80 V , IE=0 BC846W ICBO BC847W Emitter cut-off current VCB= 30 V , IE=0 BC846W VEB= 6V , IC=0 IEBO 0.1 VCB= 50 V , IE=0 BC848W BC847W uA 0.1 VEB= 6V , IC=0 VEB= 5V , IC=0 BC848W Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) Base-emitter voltage VBE(on) IC=10 mA, IB=0.5mA 0.25 IC=100 mA, IB=5mA 0.6 IC=10 mA, IB=0.5mA 0.7 IC=100 mA, IB=5mA 0.9 VCE= 5V, IC= 2mA 0.7 0.58 0.77 90 hFE(1) VCE= 5V, IC= 10uA 150 BC847CW,848CW 270 BC846AW,847AW,848AW BC846BW,847BW,848BW hFE(2) VCE= 5V, IC= 2mA BC847CW,848CW BC846AW,847AW,848AW Noise figure V VCE= 5V, IC= 10mA BC846AW,847AW,848AW BC846BW,847BW,848BW DC current gain V 45 BC848W BC848W Collector-base cut-off current BC846BW,847BW,848BW Transition frequency 110 220 200 450 420 800 10 NF VCE=5V,IC=0.2mA,f=1K Hz, Rs=2 KΩ,BW=200HZ 10 Cob VCB= 10V,f=1MHz 5 BC847CW,848CW Collector output capacitance fT VCE= 5 V, IC= 10mA,f=100MHz 100 pF MHz Type BC846AW BC846BW BC847AW BC847BW BC847CW BC848AW BC848BW BC848CW Range 110-220 200-450 110-220 200-450 420-800 110-220 200-450 420-800 Marking 1A 1B 1E 1F 1G 1J 1K 1L www.kexin.com.cn dB 4 ■ Classification of hfe(2) 2 Unit 50 BC846W BC847W Emitter - base breakdown voltage Max 80 VCBO BC847W Collector- emitter breakdown voltage Typ