APTCV60TLM99T3G Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 30A @ Tc = 80°C CoolMOS™ Q1, Q4: VDSS = 600V ; ID = 17A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies Features • Q2, Q3 Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • - 28 27 26 25 • • • • 20 19 18 23 22 29 16 30 15 14 31 32 13 2 3 4 7 8 10 11 12 Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-9 APTCV60TLM99T3G – Rev 0 March, 2009 All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 … Q1, Q4 CoolMOS™ Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged APTCV60TLM99T3G Q1 & Q4 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 22 17 75 ±20 99 110 11 1.2 800 Unit V A V mΩ W A mJ Q1 & Q4 Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VGS = 0V VDS = 600V Tj = 125°C VGS = 10V, ID = 18A VGS = VDS, ID = 1.2 mA VGS = ±20 V, VDS = 0V Min Typ Max 50 Unit 99 3.5 100 mΩ V nA Max Unit 100 2.5 3 Min Typ 2800 130 µA Q1 & Q4 Dynamic Characteristics Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf RthJC Fall Time Test Conditions VGS = 0V ; VDS = 100V f = 1MHz pF 14 VGS = 10V VBus = 400V ID = 18A nC 20 60 10 5 60 VGS = 10V VBus = 400V ID = 18A RG = 3.3Ω ns 5 Junction to Case Thermal Resistance 1.15 °C/W Q2 & Q3 Absolute maximum ratings ICM VGE PD RBSOA TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C www.microsemi.com Max ratings 600 50 30 60 ±20 90 60A @ 550V Unit V March, 2009 IC Parameter Collector - Emitter Breakdown Voltage A V W 2-9 APTCV60TLM99T3G – Rev 0 Symbol VCES APTCV60TLM99T3G Q2 & Q3 Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 30A Tj = 150°C VGE = VCE , IC = 400µA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Min Typ Max Unit 250 1.9 µA 6.5 300 V nA Max Unit V Q2 & Q3 Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data RthJC VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=30A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 30A RG = 10Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 30A RG = 10Ω Tj = 25°C VGE = ±15V Tj = 150°C VBus = 300V IC = 30A Tj = 25°C RG = 10Ω Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Junction to Case Thermal Resistance 1600 110 50 pF 0.3 µC 110 45 200 40 ns 120 50 ns 250 60 0.16 0.3 0.7 1.05 mJ 150 A mJ 1.6 °C/W March, 2009 Tr Test Conditions www.microsemi.com 3-9 APTCV60TLM99T3G – Rev 0 Symbol Characteristic APTCV60TLM99T3G CR5 & CR6 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage Test Conditions VR=600V IF = 30A IF = 60A IF = 30A trr Reverse Recovery Time Qrr Reverse Recovery Charge di/dt =200A/µs Err Reverse Recovery Energy IF = 30A VR = 400V IF = 30A VR = 400V Min 600 Tj = 25°C Tj = 125°C Tc = 80°C Typ Max 25 500 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 30 1.8 2.2 1.5 25 160 35 Tj = 125°C 480 Tj = 125°C 0.6 Unit V µA A 2.2 V ns nC mJ di/dt =1000A/µs RthJC Junction to Case Thermal Resistance 1.2 °C/W Max Unit V CR2, CR3, CR7 & CR8 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current Test Conditions VR=1200V DC Forward Current IF = 30A IF = 60A IF = 30A Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge di/dt =200A/µs Err Reverse Recovery Energy IF = 30A VR = 800V IF = 30A VR = 800V Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ 100 500 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 30 2.6 3.2 1.8 300 380 360 Tj = 125°C 1700 Tj = 125°C 1.6 µA A 3.1 V ns nC mJ di/dt =1000A/µs RthJC Junction to Case Thermal Resistance 1.2 °C/W Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % March, 2009 Characteristic Resistance @ 25°C T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ www.microsemi.com 4-9 APTCV60TLM99T3G – Rev 0 Symbol R25 ∆R25/R25 B25/85 ∆B/B APTCV60TLM99T3G Thermal and package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Min 2500 -40 -40 -40 2.5 Typ Max 175* 125 100 4.7 110 Unit V °C N.m g * Tjmax = 150°C for Q1 & Q4 SP3 Package outline (dimensions in mm) 28 17 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com Q2 & Q3 Typical performance curve March, 2009 80 VCE=300V D=50% R G=10Ω T J=150°C 60 T c =85°C 40 20 Hard switching 0 0 10 20 30 40 IC (A) www.microsemi.com 5-9 APTCV60TLM99T3G – Rev 0 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current APTCV60TLM99T3G Output Characteristics (VGE=15V) Output Characteristics 60 60 TJ=25°C VGE=19V TJ = 150°C 50 50 VGE=13V 40 TJ=150°C IC (A) IC (A) TJ=125°C 40 30 VGE=15V 30 20 20 10 10 VGE=9V TJ=25°C 0 0 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 0.5 2 VCE = 300V VGE = 15V RG = 10Ω TJ = 150°C TJ=25°C 50 1.5 E (mJ) 40 IC (A) 1.5 2 VCE (V) 2.5 3 3.5 Energy losses vs Collector Current Transfert Characteristics 60 1 30 20 Eoff 1 0.5 TJ=150°C Eon 10 TJ=25°C 0 0 5 6 7 8 9 10 11 0 12 10 20 VGE (V) Switching Energy Losses vs Gate Resistance 2.5 VCE = 300V VGE =15V IC = 30A TJ = 150°C 1.5 40 50 60 Reverse Bias Safe Operating Area 70 Eon 60 50 Eoff IC (A) E (mJ) 2 30 IC (A) 1 40 30 20 0.5 VGE=15V TJ=150°C RG=10Ω 10 Eon 0 0 0 10 20 30 40 50 60 Gate Resistance (ohms) 70 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.6 0.9 1.4 1 0.8 0.7 March, 2009 1.2 0.5 0.6 0.3 0.4 0.1 Single Pulse 0.2 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 6-9 APTCV60TLM99T3G – Rev 0 Thermal Impedance (°C/W) 1.8 APTCV60TLM99T3G Q1 & Q4 Typical performance curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 Thermal Impedance (°C/W) 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.2 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics ID, Drain Current (A) VGS=10, 20V 6.5V 80 6V 40 4.5V 0 0 5 10 15 VDS, Drain to Source Voltage (V) 20 BVDSS, Drain to Source Breakdown Voltage Breakdown Voltage vs Temperature 120 675 650 625 600 25 50 75 100 125 TJ, Junction Temperature (°C) Maximum Safe Operating Area DC Drain Current vs Case Temperature 25 100 100 µs 10 Single pulse TJ=150°C TC=25°C 1 10 ms ID, DC Drain Current (A) 20 15 10 5 0.1 0 1 10 100 1000 25 VDS, Drain to Source Voltage (V) Ciss 1000 Coss 100 10 Crss 1 0 10 150 Gate Charge vs Gate to Source Voltage VDS=400V ID=18A TJ=25°C 8 March, 2009 C, Capacitance (pF) 10000 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 50 75 100 125 TC, Case Temperature (°C) 6 4 2 0 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) www.microsemi.com 0 10 20 30 40 Gate Charge (nC) 50 60 7-9 APTCV60TLM99T3G – Rev 0 ID, Drain Current (A) limited by RDSon APTCV60TLM99T3G CR5 & CR6 Typical performance curve Forward Characteristic of diode 80 IF (A) 60 TJ=125°C 40 TJ=25°C 20 0 0.0 0.4 0.8 1.2 VF (V) 1.6 2.0 2.4 Switching Energy Losses vs Gate Resistance 1 0.75 0.75 0.5 E (mJ) E (mJ) Energy losses vs Collector Current 1 VCE = 400V VGE = 15V RG = 2.5Ω TJ = 125°C 0.25 20 40 60 VCE = 400V VGE =15V IC = 30A TJ = 125°C 0.25 0 0 0.5 0 80 0 2 4 6 8 Gate Resistance (ohms) IC (A) 10 1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) www.microsemi.com March, 2009 1.2 8-9 APTCV60TLM99T3G – Rev 0 Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 APTCV60TLM99T3G CR2, CR3, CR7 & CR8 Typical performance curve Forward Current vs Forward Voltage IF, Forward Current (A) 80 TJ=125°C 60 40 20 TJ=25°C 0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) Switching Energy Losses vs Gate Resistance 2.5 1.8 2 1.6 1.4 1.5 E (mJ) E (mJ) Energy losses vs Collector Current VCE = 800V VGE = 15V RG = 5Ω TJ = 125°C 1 0.5 20 40 60 VCE = 800V VGE =15V IC = 30A TJ = 125°C 1 0.8 0 0 1.2 0.6 80 0 10 IC (A) 20 30 Gate resistance (ohms) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 1 0.8 0.9 0.7 0.5 0.6 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 March, 2009 0.4 Rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 9-9 APTCV60TLM99T3G – Rev 0 Thermal Impedance (°C/W) 1.4